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Ferroelectricity in Si-Doped HfO2 Revealed: A Binary Lead-Free Ferroelectric

Advanced materials (Weinheim), 2014-12, Vol.26 (48), p.8198-8202

2014

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Impact of different dopants on the switching properties of ferroelectric hafniumoxide

Japanese Journal of Applied Physics, 2014-08, Vol.53 (8S1), p.8-1-08LE02-5

2014

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Impact of Scaling on the Performance of HfO2-Based Ferroelectric Field Effect Transistors

IEEE transactions on electron devices, 2014-11, Vol.61 (11), p.3699-3706

2014

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Electrical Characterisation of Ferroelectric Field Effect Transistors Based on Ferroelectric HfO2 Thin Films

Yurchuk, Ekaterina

1, 2015

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Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories

2014 IEEE International Reliability Physics Symposium, 2014, p.2E.5.1-2E.5.5

2014

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Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2

Solid-state electronics, 2013-10, Vol.88, p.65-68

2013

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Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories

IEEE transactions on electron devices, 2016-09, Vol.63 (9), p.3501-3507

2016

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From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of -Based FeFET Devices

IEEE transactions on electron devices, 2013-12, Vol.60 (12), p.4199-4205

2013

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Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films

Thin solid films, 2013-04, Vol.533, p.88-92

2013

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Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO_2Thin Films

Yurchuk, Ekaterina

2015

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From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of HfO2-Based FeFET Devices

IEEE transactions on electron devices, 2013-12, Vol.60 (12), p.4199-4205

2013

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Doped Hafnium Oxide – An Enabler for Ferroelectric Field Effect Transistors

Advances in Science and Technology, 2014-10, Vol.95, p.136-145

2014

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Charge-Trapping Phenomena in HfO 2 -Based FeFET-Type Nonvolatile Memories

IEEE transactions on electron devices, 2016-09, Vol.63 (9), p.3501-3507

2016

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Charge-Trapping Phenomena in HfO sub(2)-Based FeFET-Type Nonvolatile Memories

IEEE transactions on electron devices, 2016-09, Vol.63 (9), p.3501-3507

2016

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Ferroelectricity in Si‐Doped HfO 2 Revealed: A Binary Lead‐Free Ferroelectric

Advanced materials (Weinheim), 2014-12, Vol.26 (48), p.8198-8202

2014

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Ferroelectricity in Si-Doped HfO sub(2) Revealed: A Binary Lead-Free Ferroelectric

Advanced materials (Weinheim), 2014-12, Vol.26 (48), p.8198-8202

2014

Volltextzugriff (PDF)

Electrical characterisation of ferroelectric field effect transistors based on ferroelectric hfo2 thin films

Yurchuk, Ekaterina

2015

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Impact of Scaling on the Performance of HfO sub(2)-Based Ferroelectric Field Effect Transistors

IEEE transactions on electron devices, 2014-11, Vol.61 (11), p.3699-3706

2014

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Impact of Scaling on the Performance of HfO 2 -Based Ferroelectric Field Effect Transistors

IEEE transactions on electron devices, 2014-11, Vol.61 (11), p.3699-3706

2014

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Performance investigation and optimization of Si:HfO2 FeFETs on a 28 nm bulk technology

2013 Joint IEEE International Symposium on Applications of Ferroelectric and Workshop on Piezoresponse Force Microscopy (ISAF/PFM), 2013, p.248-251

2013

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Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2: Selected extended papers from ULIS 2012 conference

Solid-state electronics, 2013, Vol.88, p.65-68

2013

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Trapping effects in Si:HfO2-based FeFETs

Electrical Characterisation of Ferroelectric Field Effect Transistors Based on Ferroelectric HfO2 Thin Films, 2015, Vol.4

Yurchuk, Ekaterina

2015

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Introduction

Electrical Characterisation of Ferroelectric Field Effect Transistors Based on Ferroelectric HfO2 Thin Films, 2015, Vol.4

Yurchuk, Ekaterina

2015

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Summary and Outlook

Electrical Characterisation of Ferroelectric Field Effect Transistors Based on Ferroelectric HfO2 Thin Films, 2015, Vol.4

Yurchuk, Ekaterina

2015

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Electrical properties of the ferroelectric Si:HfO2 thin films

Electrical Characterisation of Ferroelectric Field Effect Transistors Based on Ferroelectric HfO2 Thin Films, 2015, Vol.4

Yurchuk, Ekaterina

2015

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Ferroelectricity in Si-Doped HfO2 Revealed: A Binary Lead-Free Ferroelectric

Impact of different dopants on the switching properties of ferroelectric hafniumoxide

Impact of Scaling on the Performance of HfO2-Based Ferroelectric Field Effect Transistors

Electrical Characterisation of Ferroelectric Field Effect Transistors Based on Ferroelectric HfO2 Thin Films

Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories

Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2

Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories

From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of -Based FeFET Devices

Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films

Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO_2Thin Films

From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of HfO2-Based FeFET Devices

Doped Hafnium Oxide – An Enabler for Ferroelectric Field Effect Transistors

Charge-Trapping Phenomena in HfO 2 -Based FeFET-Type Nonvolatile Memories

Charge-Trapping Phenomena in HfO sub(2)-Based FeFET-Type Nonvolatile Memories

Ferroelectricity in Si‐Doped HfO 2 Revealed: A Binary Lead‐Free Ferroelectric

Ferroelectricity in Si-Doped HfO sub(2) Revealed: A Binary Lead-Free Ferroelectric

Electrical characterisation of ferroelectric field effect transistors based on ferroelectric hfo2 thin films

Impact of Scaling on the Performance of HfO sub(2)-Based Ferroelectric Field Effect Transistors

Impact of Scaling on the Performance of HfO 2 -Based Ferroelectric Field Effect Transistors

Performance investigation and optimization of Si:HfO2 FeFETs on a 28 nm bulk technology

Downscaling ferroelectric field effect transistors by using ferroelectric Si-doped HfO2: Selected extended papers from ULIS 2012 conference

Trapping effects in Si:HfO2-based FeFETs

Introduction

Summary and Outlook

Electrical properties of the ferroelectric Si:HfO2 thin films

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