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Plasma Process Uniformity Diagnosis Technique Using Optical Emission Spectroscopy With Spatially Resolved Ring Lens

IEEE transactions on industrial electronics (1982), 2016-09, Vol.63 (9), p.5674-5681

2016

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Fabrication of rough Al doped ZnO films deposited by low pressure chemical vapor deposition for high efficiency thin film solar cells

Current Applied Physics, 2010, 10(3), , pp.459-462

2010

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Degradation Mechanisms of Amorphous InGaZnO Thin-Film Transistors Used in Foldable Displays by Dynamic Mechanical Stress

IEEE transactions on electron devices, 2017-01, Vol.64 (1), p.170-175

2017

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Analytical model for random dopant fluctuation in double-gate MOSFET in the subthreshold region using macroscopic modeling method

Solid-state electronics, 2016-12, Vol.126, p.136-142

2016

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Analytical Model for Junctionless Double-Gate FET in Subthreshold Region

IEEE transactions on electron devices, 2017-04, Vol.64 (4), p.1433-1440

2017

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Effect of carrier concentration on optical bandgap shift in ZnO:Ga thin films

Thin solid films, 2010-09, Vol.518 (22), p.6304-6307

2010

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Printed Electronics: Current Trends and Applications

Ilgu Yun

2016

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A compact quantum correction model for symmetric double gate metal-oxide-semiconductor field-effect transistor

Journal of applied physics, 2014-11, Vol.116 (17)

2014

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Device characteristics of Ti–InSnO thin film transistors with modulated double and triple channel structures

Thin solid films, 2013-06, Vol.537, p.275-278

2013

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Asymmetric and Double-Layered Gate-All- Around Structures of 1T-DRAM for Sensing Margin and Retention Improvement

IEEE transactions on electron devices, 2024-06, Vol.71 (6), p.3627-3632

2024

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Effects of channel thickness variation on bias stress instability of InGaZnO thin-film transistors

Microelectronics and reliability, 2011-09, Vol.51 (9-11), p.1792-1795

2011

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TFET-Based Pixel Source Follower of CMOS Image Sensor for Improved Linearity and High Signal-to-Noise Ratio

IEEE sensors journal, 2023-09, Vol.23 (17), p.1-1

2023

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Channel Length-Dependent Charge Detrapping on Threshold Voltage Shift of Amorphous InGaZnO TFTs Under Dynamic Bias Stress

IEEE transactions on electron devices, 2013-05, Vol.60 (5), p.1689-1694

2013

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Photodiodes: From Fundamentals to Applications

Ilgu Yun

2012

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Mobility enhancement in amorphous InGaZnO thin-film transistors by Ar plasma treatment

Applied physics letters, 2013-06, Vol.102 (22)

2013

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Conduction instability of amorphous InGaZnO thin-film transistors under constant drain current stress

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.2164-2166

2014

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2-D Quantum Confined Threshold Voltage Shift Model for Asymmetric Short-Channel Junctionless Quadruple-Gate FETs

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5504-5510

2021

Volltextzugriff (PDF)

Degradation of Off-Phase Leakage Current of FinFETs and Gate-All-Around FETs Induced by the Self-Heating Effect in the High-Frequency Operation Regime

IEEE transactions on nanotechnology, 2020, Vol.19, p.308-314

2020

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Junction Engineering-Based Modeling and Optimization of Deep Junction Silicon Single-Photon Avalanche Diodes for Device Scaling

IEEE transactions on electron devices, 2022-09, Vol.69 (9), p.4970-4975

2022

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Density-of-States Modeling of Solution-Processed InGaZnO Thin-Film Transistors

IEEE electron device letters, 2010-10, Vol.31 (10), p.1131-1133

2010

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Impact of process variability in junctionless FinFETs due to random dopant fluctuation, gate work function variation, and oxide thickness variation

Semiconductor science and technology, 2020-03, Vol.35 (3), p.35015

2020

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Characterization of HfO N thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas

Applied surface science, 2015-09, Vol.349, p.757-762

2015

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Thermal modeling of 7 nm node bulk fin-shaped field-effect transistors for device structure-aware design

Semiconductor science and technology, 2018-10, Vol.33 (11), p.115014

2018

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Field-dependent charge trapping analysis of ONO inter-poly dielectrics for NAND flash memory applications

Solid-state electronics, 2014-04, Vol.94, p.51-55

2014

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Compact modeling of the subthreshold characteristics of junctionless double-gate FETs including the source/drain extension regions

Solid-state electronics, 2019-06, Vol.156, p.48-57

2019

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Plasma Process Uniformity Diagnosis Technique Using Optical Emission Spectroscopy With Spatially Resolved Ring Lens

Fabrication of rough Al doped ZnO films deposited by low pressure chemical vapor deposition for high efficiency thin film solar cells

Degradation Mechanisms of Amorphous InGaZnO Thin-Film Transistors Used in Foldable Displays by Dynamic Mechanical Stress

Analytical model for random dopant fluctuation in double-gate MOSFET in the subthreshold region using macroscopic modeling method

Analytical Model for Junctionless Double-Gate FET in Subthreshold Region

Effect of carrier concentration on optical bandgap shift in ZnO:Ga thin films

Printed Electronics: Current Trends and Applications

A compact quantum correction model for symmetric double gate metal-oxide-semiconductor field-effect transistor

Device characteristics of Ti–InSnO thin film transistors with modulated double and triple channel structures

Asymmetric and Double-Layered Gate-All- Around Structures of 1T-DRAM for Sensing Margin and Retention Improvement

Effects of channel thickness variation on bias stress instability of InGaZnO thin-film transistors

TFET-Based Pixel Source Follower of CMOS Image Sensor for Improved Linearity and High Signal-to-Noise Ratio

Channel Length-Dependent Charge Detrapping on Threshold Voltage Shift of Amorphous InGaZnO TFTs Under Dynamic Bias Stress

Photodiodes: From Fundamentals to Applications

Mobility enhancement in amorphous InGaZnO thin-film transistors by Ar plasma treatment

Conduction instability of amorphous InGaZnO thin-film transistors under constant drain current stress

2-D Quantum Confined Threshold Voltage Shift Model for Asymmetric Short-Channel Junctionless Quadruple-Gate FETs

Degradation of Off-Phase Leakage Current of FinFETs and Gate-All-Around FETs Induced by the Self-Heating Effect in the High-Frequency Operation Regime

Junction Engineering-Based Modeling and Optimization of Deep Junction Silicon Single-Photon Avalanche Diodes for Device Scaling

Density-of-States Modeling of Solution-Processed InGaZnO Thin-Film Transistors

Impact of process variability in junctionless FinFETs due to random dopant fluctuation, gate work function variation, and oxide thickness variation

Characterization of HfO N thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas

Thermal modeling of 7 nm node bulk fin-shaped field-effect transistors for device structure-aware design

Field-dependent charge trapping analysis of ONO inter-poly dielectrics for NAND flash memory applications

Compact modeling of the subthreshold characteristics of junctionless double-gate FETs including the source/drain extension regions

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