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Hybrid inverted bulk heterojunction solar cells with nanoimprinted TiO2 nanopores

Solar energy materials and solar cells, 2009-09, Vol.93 (9), p.1587-1591

2009

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New Power MOSFET Employing Segmented Trench Body Contact for Improving the Avalanche Energy

2008 20th International Symposium on Power Semiconductor Devices and IC's, 2008, p.115-118

2008

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Investigation of Gate Oscillation of Power MOSFETs Induced by Avalanche Mode Operation

Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's, 2007, p.113-116

2007

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A New Soft Self-Clamping Scheme for Improving the Self-Clamped Inductive Switching (SCIS) Capability of Automotive Ignition IGBT

Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's, 2007, p.145-148

2007

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A trench-gate silicon-on-insulator lateral insulated gate bipolar transistor with the p+ cathode well

Japanese Journal of Applied Physics, 1995-02, Vol.34 (2B), p.854-859

1995

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A New 1200 V Punch Through-Insulated Gate Bipolar Transistor with Protection Circuit Employing Lateral Insulated Gate Bipolar Transistor and Floating p-Well Voltage Sensing Scheme

Japanese Journal of Applied Physics, 2007-04, Vol.46 (4S), p.2037

2007

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Hot-Carrier-Stress-Induced Degradation of 1 kV AlGaN/GaN HEMTs by Employing SiO2 Passivation

Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's, 2007, p.129-132

2007

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New GaN Schottky barrier diode employing a trench on AlGaN/GaN heterostructure

Superlattices and microstructures, 2006-10, Vol.40 (4), p.567-573

2006

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Latch-up suppressed insulated gate bipolar transistor by the deep p+ ion implantation under the n+ source

Japanese Journal of Applied Physics, 1994, Vol.33 (1B), p.563-566

1994

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High Performance AlGaN/GaN HEMT Switches Employing 500 ° C Oxidized Ni/Au Gate for Very Low Leakage Current and Improvement of Uniformity

2006 IEEE International Symposium on Power Semiconductor Devices and IC's, 2006, p.1-4

2006

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650V superjunction MOSFET using universal charge balance concept through drift region

2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014, p.83-86

2014

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A new fault current-sensing scheme for fast fault protection of the insulated gate bipolar transistor

Microelectronics, 2008-06, Vol.39 (6), p.908-913

2008

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Ni/Au Schottky gate oxidation and BCB passivation for high-breakdown-voltage AlGaN/GaN HEMT

Superlattices and microstructures, 2006-10, Vol.40 (4), p.562-566

2006

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Innovative Power Semiconductor Solutions Towards Better Energy Efficiency

2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2008, p.109-110

2008

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Numerical analysis of a new vertical IGBT structure with reduced JFET effect

Solid State Electronics, 1996, Vol.39 (8), p.1179-1183

1996

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Comparison of lateral IGBT and lateral emitter switched thyristor with a partial buried oxide layer

Physica scripta, 1997-01, Vol.1997, p.341-344

1997

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Hybrid inverted bulk heterojunction solar cells with nanoimprinted TiO sub(2) nanopores

Solar energy materials and solar cells, 2009-09, Vol.93 (9), p.1587-1591

2009

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Hybrid inverted bulk heterojunction solar cells with nanoimprinted TiO(2) nanopores

Solar energy materials and solar cells, 2009-09, Vol.93 (9), p.1587-1591

2009

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Hybrid inverted bulk heterojunction solar cells with nanoimprinted TiO 2 nanopores

Solar energy materials and solar cells, 2009, Vol.93 (9), p.1587-1591

2009

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A new power MOSFET with self current limiting capability

International journal of electronics, 1996-02, Vol.80 (2), p.131-142

1996

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Degradation of avalanche ruggedness of power diodes by thermally induced local breakdown

2006 37th IEEE Power Electronics Specialists Conference, 2006, p.1-5

2006

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Investigation of 1500V non-punch through IGBT using carrier lifetime control and anode engineering

2006 37th IEEE Power Electronics Specialists Conference, 2006, p.1-5

2006

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Investigation of short-circuit failure limited by dynamic-avalanche capability in 600-V punchthrough IGBTs

IEEE transactions on device and materials reliability, 2006-03, Vol.6 (1), p.2-8

2006

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Characterization of silicon direct bonding methodology for high performance IGBT

11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312), 1999, p.185-188

1999

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Comparison of stripe and cellular geometry for short circuit rated trench IGBT

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094), 2000, p.275-278

2000

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Hybrid inverted bulk heterojunction solar cells with nanoimprinted TiO2 nanopores

New Power MOSFET Employing Segmented Trench Body Contact for Improving the Avalanche Energy

Investigation of Gate Oscillation of Power MOSFETs Induced by Avalanche Mode Operation

A New Soft Self-Clamping Scheme for Improving the Self-Clamped Inductive Switching (SCIS) Capability of Automotive Ignition IGBT

A trench-gate silicon-on-insulator lateral insulated gate bipolar transistor with the p+ cathode well

A New 1200 V Punch Through-Insulated Gate Bipolar Transistor with Protection Circuit Employing Lateral Insulated Gate Bipolar Transistor and Floating p-Well Voltage Sensing Scheme

Hot-Carrier-Stress-Induced Degradation of 1 kV AlGaN/GaN HEMTs by Employing SiO2 Passivation

New GaN Schottky barrier diode employing a trench on AlGaN/GaN heterostructure

Latch-up suppressed insulated gate bipolar transistor by the deep p+ ion implantation under the n+ source

High Performance AlGaN/GaN HEMT Switches Employing 500 ° C Oxidized Ni/Au Gate for Very Low Leakage Current and Improvement of Uniformity

650V superjunction MOSFET using universal charge balance concept through drift region

A new fault current-sensing scheme for fast fault protection of the insulated gate bipolar transistor

Ni/Au Schottky gate oxidation and BCB passivation for high-breakdown-voltage AlGaN/GaN HEMT

Innovative Power Semiconductor Solutions Towards Better Energy Efficiency

Numerical analysis of a new vertical IGBT structure with reduced JFET effect

Comparison of lateral IGBT and lateral emitter switched thyristor with a partial buried oxide layer

Hybrid inverted bulk heterojunction solar cells with nanoimprinted TiO sub(2) nanopores

Hybrid inverted bulk heterojunction solar cells with nanoimprinted TiO(2) nanopores

Hybrid inverted bulk heterojunction solar cells with nanoimprinted TiO 2 nanopores

A new power MOSFET with self current limiting capability

Degradation of avalanche ruggedness of power diodes by thermally induced local breakdown

Investigation of 1500V non-punch through IGBT using carrier lifetime control and anode engineering

Investigation of short-circuit failure limited by dynamic-avalanche capability in 600-V punchthrough IGBTs

Characterization of silicon direct bonding methodology for high performance IGBT

Comparison of stripe and cellular geometry for short circuit rated trench IGBT

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