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Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes

Advances in optics and photonics, 2018-03, Vol.10 (1), p.246

2018

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Demonstration of AlN Schottky Barrier Diodes With Blocking Voltage Over 1 kV

IEEE electron device letters, 2017-09, Vol.38 (9), p.1286-1289

2017

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Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

Acta materialia, 2013-02, Vol.61 (3), p.945-951

2013

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Effect of Buffer Layer Design on Vertical GaN-on-GaN p-n and Schottky Power Diodes

IEEE electron device letters, 2017-06, Vol.38 (6), p.763-766

2017

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III-Nitride integrated photonics platform for the ultraviolet and visible spectral range

2017 IEEE Photonics Society Summer Topical Meeting Series (SUM), 2017, p.157-158

Yuji Zhao

2017

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Characterizations of the nonlinear optical properties for (010) and (2¯01) beta-phase gallium oxide

Optics express, 2018-02, Vol.26 (4), p.3938-3946

2018

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High-surface-area corundum nanoparticles by resistive hotspot-induced phase transformation

Nature communications, 2022-08, Vol.13 (1), p.5027-5027, Article 5027

2022

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Dopant profiling in p-i-n GaN structures using secondary electrons

Journal of applied physics, 2019-07, Vol.126 (1)

2019

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High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}

Applied physics express, 2011-08, Vol.4 (8), p.82104

2011

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Low loss GaN waveguides at the visible spectral wavelengths for integrated photonics applications

Optics express, 2017-12, Vol.25 (25), p.31758-31773

2017

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Active tracking system for visible light communication using a GaN-based micro-LED and NRZ-OOK

Optics express, 2017-07, Vol.25 (15), p.17971

2017

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Ultrawide Bandgap Semiconductors

Zhao, Yuji

1, 2021

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Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells

Applied physics letters, 2012-05, Vol.100 (20), p.201108-201108-4

2012

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Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics

Applied physics letters, 2019-02, Vol.114 (8)

2019

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Theoretical analysis of modulation doping effects on intersubband transition properties of semipolar AlGaN/GaN quantum well

Journal of applied physics, 2017-01, Vol.121 (1)

2017

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Temperature Dependence of Low‐Frequency Noise Characteristics of NiOx/β‐Ga2O3 p–n Heterojunction Diodes

Advanced electronic materials, 2024-02, Vol.10 (2), p.n/a

2024

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High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20\bar21) GaN Substrates

Applied physics express, 2010-12, Vol.3 (12), p.122102

2010

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X-ray topography characterization of gallium nitride substrates for power device development

Journal of crystal growth, 2020-08, Vol.544 (C), p.125709, Article 125709

2020

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Thermally enhanced blue light-emitting diode

Applied physics letters, 2015-09, Vol.107 (12)

2015

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Analysis of low efficiency droop of semipolar InGaN quantum well light-emitting diodes by modified rate equation with weak phase-space filling effect

AIP advances, 2016-06, Vol.6 (6), p.065013-065013-8

2016

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Epitaxial Growth of Ga2O3: A Review

Materials, 2024-08, Vol.17 (17), p.4261

2024

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The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices

Applied physics letters, 2021-05, Vol.118 (22)

2021

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Implantation-and etching-free high voltage vertical GaN p–n diodes terminated by plasma-hydrogenated p-GaN: revealing the role of thermal annealing

Applied physics express, 2019-05, Vol.12 (5), p.51015

2019

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High-Power, Low-Efficiency-Droop Semipolar ($20\bar{2}\bar{1}$) Single-Quantum-Well Blue Light-Emitting Diodes

Applied physics express, 2012-06, Vol.5 (6), p.62103

2012

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Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.74-83

2020

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Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes

Demonstration of AlN Schottky Barrier Diodes With Blocking Voltage Over 1 kV

Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

Effect of Buffer Layer Design on Vertical GaN-on-GaN p-n and Schottky Power Diodes

III-Nitride integrated photonics platform for the ultraviolet and visible spectral range

Characterizations of the nonlinear optical properties for (010) and (2¯01) beta-phase gallium oxide

High-surface-area corundum nanoparticles by resistive hotspot-induced phase transformation

Dopant profiling in p-i-n GaN structures using secondary electrons

High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}

Low loss GaN waveguides at the visible spectral wavelengths for integrated photonics applications

Active tracking system for visible light communication using a GaN-based micro-LED and NRZ-OOK

Ultrawide Bandgap Semiconductors

Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells

Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics

Theoretical analysis of modulation doping effects on intersubband transition properties of semipolar AlGaN/GaN quantum well

Temperature Dependence of Low‐Frequency Noise Characteristics of NiOx/β‐Ga2O3 p–n Heterojunction Diodes

High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20\bar21) GaN Substrates

X-ray topography characterization of gallium nitride substrates for power device development

Thermally enhanced blue light-emitting diode

Analysis of low efficiency droop of semipolar InGaN quantum well light-emitting diodes by modified rate equation with weak phase-space filling effect

Epitaxial Growth of Ga2O3: A Review

The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices

Implantation-and etching-free high voltage vertical GaN p–n diodes terminated by plasma-hydrogenated p-GaN: revealing the role of thermal annealing

High-Power, Low-Efficiency-Droop Semipolar ($20\bar{2}\bar{1}$) Single-Quantum-Well Blue Light-Emitting Diodes

Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes

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