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Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

IEEE transactions on electron devices, 2006-09, Vol.53 (9), p.2207-2215

2006

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IEEE_Xplore

Fast anion-exchange from CsPbI3 to CsPbBr3 via Br2-vapor-assisted deposition for air-stable all-inorganic perovskite solar cells

Chemical engineering journal (Lausanne, Switzerland : 1996), 2018-07, Vol.343, p.146-154

2018

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Fabrication of CsxFA1-xPbI3 Mixed-Cation Perovskites via Gas-Phase-Assisted Compositional Modulation for Efficient and Stable Photovoltaic Devices

ACS applied materials & interfaces, 2017-12, Vol.9 (49), p.42708-42716

2017

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High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

IEEE electron device letters, 2005-07, Vol.26 (7), p.435-437

2005

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IEEE_Xplore

AlGaN-GaN double-channel HEMTs

IEEE transactions on electron devices, 2005-04, Vol.52 (4), p.438-446

2005

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IEEE_Xplore

Effects of fluid flow rate and viscosity on gravel-pack plugging and the optimization of sand-control wells production

Petroleum exploration and development, 2019-12, Vol.46 (6), p.1251-1259

2019

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Investigation of the Electroluminescence Mechanism of GaN-Based Blue and Green Light-Emitting Diodes with Junction Temperature Range of 120–373 K

Applied sciences, 2020-01, Vol.10 (2), p.444

2020

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A simulation study on the enhancement of the efficiency of GaN-based blue light-emitting diodes at low current density for micro-LED applications

Materials research express, 2019-09, Vol.6 (10), p.105915

2019

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Adaptive Neural Network Saturated Control for MDF Continuous Hot Pressing Hydraulic System With Uncertainties

IEEE access, 2018-01, Vol.6, p.2266-2273

2018

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Robust Adaptive Neural Prescribed Performance Control for MDF Continuous Hot Pressing System With Input Saturation

IEEE access, 2018-01, Vol.6, p.9099-9113

2018

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Range sidelobe suppression for OFDM-integrated radar and communication signal

Journal of engineering (Stevenage, England), 2019-11, Vol.2019 (21), p.7624-7627

2019

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In-Situ Measurement of Junction Temperature and Light Intensity of Light Emitting Diodes With an Internal Sensor Unit

IEEE electron device letters, 2015-10, Vol.36 (10), p.1082-1084

2015

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IEEE_Xplore

Hybrid Cyan Nitride/Red Phosphors White Light-Emitting Diodes With Micro-Hole Structures

IEEE photonics journal, 2018-10, Vol.10 (5), p.1-8

2018

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Enhanced Performance of Blue Light-Emitting Diodes With InGaN/GaN Superlattice as Hole Gathering Layer

IEEE photonics technology letters, 2012-07, Vol.24 (14), p.1239-1241

2012

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IEEE_Xplore

Multiple description quantizer design for multiple-antenna systems with MAP detection

IEEE transactions on communications, 2010-01, Vol.58 (1), p.136-145

2010

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IEEE_Xplore

AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement

IEEE electron device letters, 2006-01, Vol.27 (1), p.10-12

2006

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IEEE_Xplore

The Integration of iBooks and Travel Documentary Films for Foreign Language Teaching and Learning

Journal of higher education theory and practice, 2018-08, Vol.18 (3), p.72-74

Zhou, Yugang

2018

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DC and RF Characteristics of AlGaN/GaN/InGaN/GaN Double-Heterojunction HEMTs

IEEE transactions on electron devices, 2007-01, Vol.54 (1), p.2-10

2007

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IEEE_Xplore

Experimental comparison of the pathways and rates of the dehydration of Al-, Fe-, Mg- and Ca-sulfates under Mars relevant conditions

Icarus (New York, N.Y. 1962), 2014-05, Vol.234, p.162-173

2014

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Effect of Fe Doping Profile on Current Collapse in GaN‐based RF HEMTs

Chemistry : a European journal, 2024-05, Vol.30 (27), p.e202304100-n/a

2024

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A low phase-noise X-band MMIC VCO using high-linearity and low-noise composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs

IEEE transactions on microwave theory and techniques, 2007, Vol.55 (1), p.23-29

2007

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Stable and Bright Pyridine Manganese Halides for Efficient White Light‐Emitting Diodes

Advanced functional materials, 2021-05, Vol.31 (19), p.n/a

2021

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Enhancement of the light output efficiency and thermal stability of AlGaN-based deep-ultraviolet light-emitting diodes with Ag-nanodot-based p-contacts and an 8-nm p-GaN cap layer

Optics express, 2022-12, Vol.30 (25), p.44933-44942

2022

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Ag nanodot/Mg/Al reflective Ohmic contacts simultaneously suitable for n-type and p-type GaN

Journal of physics. D, Applied physics, 2023-05, Vol.56 (21), p.215101

2023

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Performance of predistorted APK Modulation for one- and two-link nonlinear power amplifier Satellite communication channels

IEEE transactions on vehicular technology, 2005-03, Vol.54 (2), p.629-638

2005

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IEEE_Xplore

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Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

Fast anion-exchange from CsPbI3 to CsPbBr3 via Br2-vapor-assisted deposition for air-stable all-inorganic perovskite solar cells

Fabrication of CsxFA1-xPbI3 Mixed-Cation Perovskites via Gas-Phase-Assisted Compositional Modulation for Efficient and Stable Photovoltaic Devices

High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

AlGaN-GaN double-channel HEMTs

Effects of fluid flow rate and viscosity on gravel-pack plugging and the optimization of sand-control wells production

Investigation of the Electroluminescence Mechanism of GaN-Based Blue and Green Light-Emitting Diodes with Junction Temperature Range of 120–373 K

A simulation study on the enhancement of the efficiency of GaN-based blue light-emitting diodes at low current density for micro-LED applications

Adaptive Neural Network Saturated Control for MDF Continuous Hot Pressing Hydraulic System With Uncertainties

Robust Adaptive Neural Prescribed Performance Control for MDF Continuous Hot Pressing System With Input Saturation

Range sidelobe suppression for OFDM-integrated radar and communication signal

In-Situ Measurement of Junction Temperature and Light Intensity of Light Emitting Diodes With an Internal Sensor Unit

Hybrid Cyan Nitride/Red Phosphors White Light-Emitting Diodes With Micro-Hole Structures

Enhanced Performance of Blue Light-Emitting Diodes With InGaN/GaN Superlattice as Hole Gathering Layer

Multiple description quantizer design for multiple-antenna systems with MAP detection

AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement

The Integration of iBooks and Travel Documentary Films for Foreign Language Teaching and Learning

DC and RF Characteristics of AlGaN/GaN/InGaN/GaN Double-Heterojunction HEMTs

Experimental comparison of the pathways and rates of the dehydration of Al-, Fe-, Mg- and Ca-sulfates under Mars relevant conditions

Effect of Fe Doping Profile on Current Collapse in GaN‐based RF HEMTs

A low phase-noise X-band MMIC VCO using high-linearity and low-noise composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs

Stable and Bright Pyridine Manganese Halides for Efficient White Light‐Emitting Diodes

Enhancement of the light output efficiency and thermal stability of AlGaN-based deep-ultraviolet light-emitting diodes with Ag-nanodot-based p-contacts and an 8-nm p-GaN cap layer

Ag nanodot/Mg/Al reflective Ohmic contacts simultaneously suitable for n-type and p-type GaN

Performance of predistorted APK Modulation for one- and two-link nonlinear power amplifier Satellite communication channels

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