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Evidence for bulk trap generation during NBTI phenomenon in pMOSFETs with ultrathin SiON gate dielectrics

IEEE transactions on electron devices, 2006-01, Vol.53 (1), p.51-55

2006

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IEEE_Xplore

Reduction of Threshold Voltage by Diffusion Control Technique in p-MISFETs Using Poly-Si/TiN/HfSiON Gate Stacks

IEEE electron device letters, 2007-10, Vol.28 (10), p.868-870

2007

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IEEE_Xplore

Three-Dimensional Observation of Edge-Roughness on Poly-Si/TiN Stacked Gate Using Three-Dimensional STEM

Microscopy and microanalysis, 2009-07, Vol.15 (S2), p.634-635

2009

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Negative bias temperature instability of pMOSFETs with ultra-thin SiON gate dielectrics

2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual, 2003, p.183-188

2003

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IEEE_Xplore

Accurate evaluation of mobility in high gate-leakage-current MOSFETs by using a transmission-line model

IEEE transactions on electron devices, 2004-10, Vol.51 (10), p.1653-1658

2004

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IEEE_Xplore

Suppression of anomalous threshold voltage increase with area scaling for Mg- or La-incorporated high-k/Metal gate nMISFETs in deeply scaled region

2010 Symposium on VLSI Technology, 2010, p.33-34

2010

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IEEE_Xplore

Bit-line clamped sensing multiplex and accurate high voltage generator for quarter-micron flash memories

IEEE journal of solid-state circuits, 1996-11, Vol.31 (11), p.1590-1600

1996

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IEEE_Xplore

Two concerns about NBTI issue: gate dielectric scaling and increasing gate current

2004 IEEE International Reliability Physics Symposium. Proceedings, 2004, p.28-34

2004

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IEEE_Xplore

Positive charge generation due to species of hydrogen during NBTI phenomenon in pMOSFETs with ultra-thin SiON gate dielectrics

Microelectronics and reliability, 2005, Vol.45 (1), p.65-69

2005

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Advantages of gate work-function engineering by incorporating sub-monolayer Hf at SiON/poly-Si interface in low-power CMOS

Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005, 2005, p.132-133

2005

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IEEE_Xplore

Analysis of the exponentially decaying transient current in MOS capacitors

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320), 2002, p.387-392

2002

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IEEE_Xplore

Effects of remote-surface-roughness scattering on carrier mobility in field-effect-transistors with ultrathin gate dielectrics

Applied physics letters, 2004-02, Vol.84 (8), p.1395-1397

2004

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Significant improvement in reliability of HfSiON gate insulator

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual, 2005, p.644-645

2005

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IEEE_Xplore

COPPER DIFFUSION BEHAVIOR IN SiO2/Si STRUCTURE DURING 400 C ANNEALING

Jpn.J.Appl.Phys ,Part 1. Vol. 43, no. 1, pp. 1-8. 2004, 2004-01, Vol.43 (1), p.1-8

2004

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Band offsets and chemical bonding states in N-plasma-treated HfSiONgate stacks studied by photoelectron spectroscopy and x-rayabsorption spectroscopy

Journal of applied physics, 2006-08, Vol.100 (3), p.033709-033709-5

2006

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Band offsets and chemical bonding states in N-plasma-treated HfSiON gate stacks studied by photoelectron spectroscopy and x-ray absorption spectroscopy

Journal of applied physics, 2006-08, Vol.100 (3)

2006

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COPPER DISTRIBUTION NEAR A SiO2/Si INTERFACE UNDER LOW-TEMPERATURE ANNEALING

Jpn.J.Appl.Phys ,Part 1. Vol. 41, no. 10, pp. 5887-5893. 2002, 2002, Vol.41 (10), p.5887-5893

2002

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True influence of wafer-backside copper contamination during the back-end process on device characteristics

Digest. International Electron Devices Meeting, 2002, p.737-740

2002

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IEEE_Xplore

A novel analysis method of threshold voltage shift due to detrap in a multi-level flash memory

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184), 2001, p.115-116

2001

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IEEE_Xplore

VIB-6 Hall effect analysis of charge transport in silicon dioxide-silicon nitride double layers

IEEE transactions on electron devices, 1987-11, Vol.34 (11), p.2386-2386

1987

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IEEE_Xplore

An ultra-thin silicon nitride gate dielectric with oxygen-enriched interface (OI-SiN) for CMOS with EOT of 0.9 nm and beyond

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303), 2002, p.202-203

2002

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IEEE_Xplore

Evaluation of mobility in the MOSFET with high leakage current

International Conference on Microelectronic Test Structures, 2003, 2003, p.91-94

2003

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IEEE_Xplore

Advanced Poly-Si NMIS and Poly-Si/TiN PMIS Hybrid-Gate High-k CMIS using PVD/CVD-Stacked TiN and Local Strain Technique

2007 IEEE Symposium on VLSI Technology, 2007, p.214-215

2007

Link zum Volltext
IEEE_Xplore

Reliability analysis of gate oxide using bi-Poisson model to evaluate the crystal defect effect

Proceedings of 1994 IEEE International Conference on Microelectronic Test Structures, 1994, p.72-76

1994

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IEEE_Xplore

Femto-second CMOS technology with high-k offset spacer and SiN gate dielectric with oxygen-enriched interface

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303), 2002, p.150-151

2002

Link zum Volltext
IEEE_Xplore

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Evidence for bulk trap generation during NBTI phenomenon in pMOSFETs with ultrathin SiON gate dielectrics

Reduction of Threshold Voltage by Diffusion Control Technique in p-MISFETs Using Poly-Si/TiN/HfSiON Gate Stacks

Three-Dimensional Observation of Edge-Roughness on Poly-Si/TiN Stacked Gate Using Three-Dimensional STEM

Negative bias temperature instability of pMOSFETs with ultra-thin SiON gate dielectrics

Accurate evaluation of mobility in high gate-leakage-current MOSFETs by using a transmission-line model

Suppression of anomalous threshold voltage increase with area scaling for Mg- or La-incorporated high-k/Metal gate nMISFETs in deeply scaled region

Bit-line clamped sensing multiplex and accurate high voltage generator for quarter-micron flash memories

Two concerns about NBTI issue: gate dielectric scaling and increasing gate current

Positive charge generation due to species of hydrogen during NBTI phenomenon in pMOSFETs with ultra-thin SiON gate dielectrics

Advantages of gate work-function engineering by incorporating sub-monolayer Hf at SiON/poly-Si interface in low-power CMOS

Analysis of the exponentially decaying transient current in MOS capacitors

Effects of remote-surface-roughness scattering on carrier mobility in field-effect-transistors with ultrathin gate dielectrics

Significant improvement in reliability of HfSiON gate insulator

COPPER DIFFUSION BEHAVIOR IN SiO2/Si STRUCTURE DURING 400 C ANNEALING

Band offsets and chemical bonding states in N-plasma-treated HfSiONgate stacks studied by photoelectron spectroscopy and x-rayabsorption spectroscopy

Band offsets and chemical bonding states in N-plasma-treated HfSiON gate stacks studied by photoelectron spectroscopy and x-ray absorption spectroscopy

COPPER DISTRIBUTION NEAR A SiO2/Si INTERFACE UNDER LOW-TEMPERATURE ANNEALING

True influence of wafer-backside copper contamination during the back-end process on device characteristics

A novel analysis method of threshold voltage shift due to detrap in a multi-level flash memory

VIB-6 Hall effect analysis of charge transport in silicon dioxide-silicon nitride double layers

An ultra-thin silicon nitride gate dielectric with oxygen-enriched interface (OI-SiN) for CMOS with EOT of 0.9 nm and beyond

Evaluation of mobility in the MOSFET with high leakage current

Advanced Poly-Si NMIS and Poly-Si/TiN PMIS Hybrid-Gate High-k CMIS using PVD/CVD-Stacked TiN and Local Strain Technique

Reliability analysis of gate oxide using bi-Poisson model to evaluate the crystal defect effect

Femto-second CMOS technology with high-k offset spacer and SiN gate dielectric with oxygen-enriched interface

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