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Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer

IEEE electron device letters, 2014-07, Vol.35 (7), p.732-734

2014

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High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications

IEEE electron device letters, 2018-07, Vol.39 (7), p.991-994

2018

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RF loss mechanisms in GaN‐based high‐electron‐mobility‐transistor on silicon: Role of an inversion channel at the AlN/Si interface

Physica status solidi. A, Applications and materials science, 2017-07, Vol.214 (7), p.n/a

2017

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GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications

IEEE electron device letters, 2014-10, Vol.35 (10), p.1001-1003

2014

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Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications

Micromachines (Basel), 2024-01, Vol.15 (1), p.81

2024

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Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications

Physica status solidi. A, Applications and materials science, 2023-04, Vol.220 (8), p.n/a

2023

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Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications

Materials, 2021-11, Vol.14 (21), p.6558

2021

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A Tall Gate Stem GaN HEMT with Improved Power Density and Efficiency at Ka-Band

IEEE journal of the Electron Devices Society, 2023-01, Vol.11, p.1-1

2023

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Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications

Micromachines (Basel), 2023-04, Vol.14 (5), p.931

2023

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A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer

Materials, 2022-01, Vol.15 (3), p.703

2022

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Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications

IEEE journal of the Electron Devices Society, 2024, Vol.12, p.268-274

2024

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Investigation of the Effect of Different SiNx Thicknesses on the Characteristics of AlGaN/GaN High-Electron-Mobility Transistors in Ka-Band

Electronics (Basel), 2023-10, Vol.12 (20), p.4336

2023

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Noise Performance Investigation of AlGaN/GaN HEMT With Tall Gate Stem for Millimeter-Wave LNA Application

IEEE journal of the Electron Devices Society, 2023, Vol.11, p.744-751

2023

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Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications

IEEE journal of the Electron Devices Society, 2023-01, Vol.11, p.1-1

2023

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Electrical Analysis and PBTI Reliability of In0.53Ga0.47As MOSFETs With AlN Passivation Layer and NH3 Postremote Plasma Treatment

IEEE transactions on electron devices, 2016-09, Vol.63 (9), p.3466-3472

2016

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Normally-OFF GaN MIS-HEMT With F− Doped Gate Insulator Using Standard Ion Implantation

IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.893-899

2018

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Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power Applications

Journal of electronic materials, 2020-02, Vol.49 (2), p.1348-1353

2020

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InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatment

IEEE electron device letters, 2017-03, Vol.38 (3), p.310-313

2017

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AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants

IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.110-115

2018

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InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D

IEEE journal of the Electron Devices Society, 2018, Vol.6, p.856-860

2018

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Evaluation of TiN/Cu Gate Metal Scheme for AlGaN/GaN High-Electron-Mobility Transistor Application

Applied physics express, 2013-09, Vol.6 (9), p.91003

2013

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Evaluation of a 100-nm Gate Length E-Mode InAs High Electron Mobility Transistor With Ti/Pt/Au Ohmic Contacts and Mesa Sidewall Channel Etch for High-Speed and Low-Power Logic Applications

IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.797-802

2018

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Effect of surface passivation on the electrical performance of AlGaN/GaN high‐electron‐mobility transistors with slant field plates fabricated using deep‐UV lithography

Physica status solidi. C, 2017-01, Vol.14 (1-2), p.np-n/a

2017

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Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric

Japanese Journal of Applied Physics, 2016-04, Vol.55 (4S)

2016

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High linearity AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts for Ka-band applications

Applied physics express, 2024-07, Vol.17 (7), p.71001

2024

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Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer

High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications

RF loss mechanisms in GaN‐based high‐electron‐mobility‐transistor on silicon: Role of an inversion channel at the AlN/Si interface

GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications

Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications

Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications

Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications

A Tall Gate Stem GaN HEMT with Improved Power Density and Efficiency at Ka-Band

Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications

A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer

Improvement of AlGaN/GaN HEMT Noise Figure Using Thick Cu Metallization for Satellite Communication Applications

Investigation of the Effect of Different SiNx Thicknesses on the Characteristics of AlGaN/GaN High-Electron-Mobility Transistors in Ka-Band

Noise Performance Investigation of AlGaN/GaN HEMT With Tall Gate Stem for Millimeter-Wave LNA Application

Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications

Electrical Analysis and PBTI Reliability of In0.53Ga0.47As MOSFETs With AlN Passivation Layer and NH3 Postremote Plasma Treatment

Normally-OFF GaN MIS-HEMT With F− Doped Gate Insulator Using Standard Ion Implantation

Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power Applications

InGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatment

AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants

InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D

Evaluation of TiN/Cu Gate Metal Scheme for AlGaN/GaN High-Electron-Mobility Transistor Application

Evaluation of a 100-nm Gate Length E-Mode InAs High Electron Mobility Transistor With Ti/Pt/Au Ohmic Contacts and Mesa Sidewall Channel Etch for High-Speed and Low-Power Logic Applications

Effect of surface passivation on the electrical performance of AlGaN/GaN high‐electron‐mobility transistors with slant field plates fabricated using deep‐UV lithography

Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric

High linearity AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts for Ka-band applications

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