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Efficacy and safety of removing peritoneal dialysis catheters using the pull technique

International urology and nephrology, 2024-03, Vol.56 (3), p.1129-1135

2024

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Single-Event Effects Induced by Heavy Ions in 40nm Resistive Random Access Memory

2022 IEEE 6th Advanced Information Technology, Electronic and Automation Control Conference (IAEAC ), 2022, p.1437-1441

2022

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Total ionizing dose effects on data retention characteristics of 55nm SONOS flash

Journal of physics. Conference series, 2021-07, Vol.1983 (1), p.12061

2021

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Impact of Program/Erase Cycles, Total Ionizing Dose and Data Bake on Data Retention of 55nm SONOS Flash

Journal of physics. Conference series, 2021-05, Vol.1920 (1), p.12101

2021

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Research on Pulsed Laser Induced Single Event Effect for High-Speed Serial Interface

2020 IEEE 3rd International Conference on Electronics Technology (ICET), 2020, p.185-189

2020

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Single Event Effect Characterization of High Speed Serial JESD204B Data Receiver

Journal of physics. Conference series, 2019-11, Vol.1345 (2), p.22016

2019

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Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM

IEEE transactions on nuclear science, 2019-06, Vol.66 (6), p.892-898

2019

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IEEE_Xplore

A Low-Jitter 10GHz PLL Based on Adaptive Bandwidth Technique for Muti-Rate Serial Link Data Transmitter

2019 IEEE 3rd Information Technology, Networking, Electronic and Automation Control Conference (ITNEC), 2019, p.2209-2212

2019

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A Fast-Lock Low-Jitter PLL Based Adaptive Bandwidth Technique

Journal of physics. Conference series, 2018-09, Vol.1087 (5), p.52029

2018

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Design of a novel 12T radiation hardened memory cell tolerant to single event upsets (SEU)

2017 2nd IEEE International Conference on Integrated Circuits and Microsystems (ICICM), 2017, p.182-185

2017

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Single-Event Transient Analysis and Hardening in a 180 nm CMOS Embedded Low-Dropout Regulator

2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2017, p.1-4

2017

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Design of a high performance triple-mode oscillator

Automotive, Mechanical and Electrical Engineering, 2017, p.669-674

1, 2017

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A 8.0Gb/s source-series-terminated transmitter driver with 3 tap FFE for multi-standard applications in 65 nm CMOS

2016 International Conference on Control, Decision and Information Technologies (CoDIT), 2016, p.331-334

2016

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A 0.996mW 10GHz slicer with 20mV input resolution in 65nm CMOS

2016 China Semiconductor Technology International Conference (CSTIC), 2016, p.1-3

2016

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A Study on High Density Gate-Oxide Anti-Fuse PROM Memory Cell Program Features

MATEC Web of Conferences, 2016, Vol.75, p.10004

2016

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SEU and SET of 65 Bulk CMOS Flip-flops and Their Implications for RHBD

IEEE transactions on nuclear science, 2015-12, Vol.62 (6), p.2666-2672

2015

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IEEE_Xplore

A four-interleaving HBD SRAM cell based on dual DICE for multiple node collection mitigation

Journal of semiconductors, 2015-11, Vol.36 (11), p.97-100

刘琳岳素格陆时进

2015

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Modeling and simulation of single-event effect in CMOS circuit

Journal of semiconductors, 2015-11, Vol.36 (11), p.15-24

岳素格张晓林赵元富刘琳王汉宁

2015

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The single-event effect evaluation technology for nano integrated circuits

Journal of semiconductors, 2015-11, Vol.36 (11), p.75-79

郑宏超赵元富岳素格范隆杜守刚陈茂鑫于春青

2015

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Experimental research on transient radiation effects in microprocessors based on SPARC-V8 architecture

Journal of semiconductors, 2015-11, Vol.36 (11), p.58-62

赵元富郑宏超范隆岳素格陈茂鑫杜守刚

2015

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Single event soft error in advanced integrated circuit

Journal of semiconductors, 2015-11, Vol.36 (11), p.1-14

赵元富岳素格赵馨远陆时进边强王亮孙永姝

2015

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Predictions for proton and heavy ions induced SEUs in 65 nm SRAMs

Journal of semiconductors, 2015-11, Vol.36 (11), p.69-72

杜守刚岳素格刘红侠范隆郑宏超

2015

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Analysis and RHBD technique of single event transients in PLLs

Journal of semiconductors, 2015-11, Vol.36 (11), p.73-74

韩志伟王亮岳素格韩兵杜守刚

2015

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The investigation on sensitive mapping of memory cell in microprocessor

Journal of semiconductors, 2015-11, Vol.36 (11), p.44-47

于春青范隆岳素格陈茂鑫杜守刚郑宏超

2015

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A prediction technique for single-event effects on complex integrated circuits

Journal of semiconductors, 2015-11, Vol.36 (11), p.80-84

赵元富于春青范隆岳素格陈茂鑫杜守刚郑宏超

2015

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Efficacy and safety of removing peritoneal dialysis catheters using the pull technique

Single-Event Effects Induced by Heavy Ions in 40nm Resistive Random Access Memory

Total ionizing dose effects on data retention characteristics of 55nm SONOS flash

Impact of Program/Erase Cycles, Total Ionizing Dose and Data Bake on Data Retention of 55nm SONOS Flash

Research on Pulsed Laser Induced Single Event Effect for High-Speed Serial Interface

Single Event Effect Characterization of High Speed Serial JESD204B Data Receiver

Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM

A Low-Jitter 10GHz PLL Based on Adaptive Bandwidth Technique for Muti-Rate Serial Link Data Transmitter

A Fast-Lock Low-Jitter PLL Based Adaptive Bandwidth Technique

Design of a novel 12T radiation hardened memory cell tolerant to single event upsets (SEU)

Single-Event Transient Analysis and Hardening in a 180 nm CMOS Embedded Low-Dropout Regulator

Design of a high performance triple-mode oscillator

A 8.0Gb/s source-series-terminated transmitter driver with 3 tap FFE for multi-standard applications in 65 nm CMOS

A 0.996mW 10GHz slicer with 20mV input resolution in 65nm CMOS

A Study on High Density Gate-Oxide Anti-Fuse PROM Memory Cell Program Features

SEU and SET of 65 Bulk CMOS Flip-flops and Their Implications for RHBD

A four-interleaving HBD SRAM cell based on dual DICE for multiple node collection mitigation

Modeling and simulation of single-event effect in CMOS circuit

The single-event effect evaluation technology for nano integrated circuits

Experimental research on transient radiation effects in microprocessors based on SPARC-V8 architecture

Single event soft error in advanced integrated circuit

Predictions for proton and heavy ions induced SEUs in 65 nm SRAMs

Analysis and RHBD technique of single event transients in PLLs

The investigation on sensitive mapping of memory cell in microprocessor

A prediction technique for single-event effects on complex integrated circuits

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