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A review of flexible lead-free piezoelectric energy harvester

Journal of alloys and compounds, 2022-10, Vol.918, p.165653, Article 165653

2022

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Investigations on the Degradation of 1.2-kV 4H-SiC MOSFETs Under Repetitive Short-Circuit Tests

IEEE transactions on electron devices, 2016-11, Vol.63 (11), p.4346-4351, Article 4346

2016

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4H-SiC Trench MOSFET With Floating/Grounded Junction Barrier-controlled Gate Structure

IEEE transactions on electron devices, 2017-11, Vol.64 (11), p.4568-4574

2017

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Properties of Convex Lattice Sets under the Discrete Legendre Transform

Mathematics (Basel), 2024-06, Vol.12 (11), p.1773

2024

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Demonstration of 4H-SiC CMOS digital IC gates based on the mainstream 6-inch wafer processing technique

Journal of semiconductors, 2022-08, Vol.43 (8), p.82801-76

2022

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N-type B-S co-doping and S doping in diamond from first principles

Carbon (New York), 2018-04, Vol.130, p.458-465

2018

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SiC Trench MOSFET With Reduced Switching Loss and Increased Short-Circuit Capability

IEEE transactions on electron devices, 2020-09, Vol.67 (9), p.3685-3690

2020

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Expanding the dose window of step-etched space-modulated JTE for ultrahigh voltage 4H-SiC devices

Microelectronics, 2024-10, Vol.152, p.106387, Article 106387

2024

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Planar terahertz filter with narrow passband and low insertion loss

Applied optics (2004), 2021-02, Vol.60 (6), p.1515

2021

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12.5 kV SiC Gate Turn Off Thyristor With Trench-Modulated JTE Structure

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.1258-1264

2022

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A Deep Insight Into the Degradation of 1.2-kV 4H-SiC mosfets Under Repetitive Unclamped Inductive Switching Stresses

IEEE transactions on power electronics, 2018-06, Vol.33 (6), p.5251-5261

2018

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Loss Analysis of Thin Film Microstrip Line With Low Loss at D Band

Journal of lightwave technology, 2021-04, Vol.39 (8), p.2421-2430

2021

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Fabrication and characterization of integrated uncooled infrared sensor arrays using a-Si thin-film transistors as active elements

Journal of microelectromechanical systems, 2005-10, Vol.14 (5), p.1167-1177

2005

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60-GHz array antenna with standard CMOS technology on Schott Borofloat

Journal of semiconductors, 2013-11, Vol.34 (11), p.132-135

罗俊岳瑞峰

2013

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Part-of-speech- and syntactic-aware graph convolutional network for aspect-level sentiment classification

Multimedia tools and applications, 2024-03, Vol.83 (10), p.28793-28806

2024

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A Datasheet-Driven Nonsegmented Empirical SPICE Model of SiC MOSFET With Improved Accuracy and Convergence Capability

IEEE transactions on electron devices, 2023-01, Vol.70 (1), p.1-9

2023

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First-principles calculation to N-type Li N Co-doping and Li doping in diamond

Diamond and related materials, 2020-12, Vol.110, p.108070, Article 108070

2020

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Dielectric Constant Determination for Thin Film by Using Reflection Resonance Microstrip Line Method

IEEE transactions on dielectrics and electrical insulation, 2022-02, Vol.29 (1), p.15-21

2022

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Variable-Focus Liquid Lens Based on EWOD

Journal of adhesion science and technology, 2012-09, Vol.26 (12-17), p.1941-1946

2012

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An uncooled microbolometer infrared detector based on poly-SiGe thermistor

Sensors and actuators. A. Physical., 2003-08, Vol.105 (3), p.286-292

2003

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Design and fabrication of single-chip a-Si TFT-based uncooled infrared sensors

Sensors and actuators. A. Physical., 2004-10, Vol.116 (2), p.257-263

2004

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First-principles calculation to N-type LiN Co-doping and Li doping in diamond

Diamond and related materials, 2020-12, Vol.110, Article 108070

2020

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First-principles calculation to N-type Lisingle bondN Co-doping and Li doping in diamond

Diamond and related materials, 2020-12, Vol.110, p.1

2020

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Preparation and Properties of Waterborne Polyurethane with PDMS Side Chain

Advanced materials research, 2010, Vol.136, p.179-183

2010

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Wafer-Level Process for Single-Use Buckling-Film Microliter-Range Pumps

Journal of microelectromechanical systems, 2007-08, Vol.16 (4), p.795-801

2007

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A review of flexible lead-free piezoelectric energy harvester

Investigations on the Degradation of 1.2-kV 4H-SiC MOSFETs Under Repetitive Short-Circuit Tests

4H-SiC Trench MOSFET With Floating/Grounded Junction Barrier-controlled Gate Structure

Properties of Convex Lattice Sets under the Discrete Legendre Transform

Demonstration of 4H-SiC CMOS digital IC gates based on the mainstream 6-inch wafer processing technique

N-type B-S co-doping and S doping in diamond from first principles

SiC Trench MOSFET With Reduced Switching Loss and Increased Short-Circuit Capability

Expanding the dose window of step-etched space-modulated JTE for ultrahigh voltage 4H-SiC devices

Planar terahertz filter with narrow passband and low insertion loss

12.5 kV SiC Gate Turn Off Thyristor With Trench-Modulated JTE Structure

A Deep Insight Into the Degradation of 1.2-kV 4H-SiC mosfets Under Repetitive Unclamped Inductive Switching Stresses

Loss Analysis of Thin Film Microstrip Line With Low Loss at D Band

Fabrication and characterization of integrated uncooled infrared sensor arrays using a-Si thin-film transistors as active elements

60-GHz array antenna with standard CMOS technology on Schott Borofloat

Part-of-speech- and syntactic-aware graph convolutional network for aspect-level sentiment classification

A Datasheet-Driven Nonsegmented Empirical SPICE Model of SiC MOSFET With Improved Accuracy and Convergence Capability

First-principles calculation to N-type Li N Co-doping and Li doping in diamond

Dielectric Constant Determination for Thin Film by Using Reflection Resonance Microstrip Line Method

Variable-Focus Liquid Lens Based on EWOD

An uncooled microbolometer infrared detector based on poly-SiGe thermistor

Design and fabrication of single-chip a-Si TFT-based uncooled infrared sensors

First-principles calculation to N-type LiN Co-doping and Li doping in diamond

First-principles calculation to N-type Lisingle bondN Co-doping and Li doping in diamond

Preparation and Properties of Waterborne Polyurethane with PDMS Side Chain

Wafer-Level Process for Single-Use Buckling-Film Microliter-Range Pumps

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