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Hamiltonian Neural Network 6-DoF Rigid-Body Dynamic Modeling Based on Energy Variation Estimation

Complexity (New York, N.Y.), 2023, Vol.2023, p.1-18

2023

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High-performance 4H-SiC p-i-n ultraviolet avalanche photodiodes with large active area

Chinese optics letters, 2019-09, Vol.17 (9), p.90401

2019

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Source-field-plated Ga2O3 MOSFET with a breakdown voltage of 550 V

Journal of semiconductors, 2019-01, Vol.40 (1)

2019

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Coeffect of trapping behaviors on the performance of GaN-based devices

Journal of semiconductors, 2018-09, Vol.39 (9), p.94007

2018

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A high performance InAlN/GaN HEMT with low R on and gate leakage

Journal of semiconductors, 2016-02, Vol.37 (2), p.24009

2016

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Large-area 4H-SiC avalanche photodiodes with high gain and low dark current for visible-blind ultraviolet detection

Chinese optics letters, 2018-06, Vol.16 (6), p.60401

2018

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Multi-agent hierarchical policy gradient for Air Combat Tactics emergence via self-play

Engineering applications of artificial intelligence, 2021-02, Vol.98, p.104112, Article 104112

2021

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Leveraging Single-Goal Predictions to Improve the Efficiency of Multi-Goal Motion Planning with Dynamics

2023 IEEE/RSJ International Conference on Intelligent Robots and Systems (IROS), 2023, p.850-857

2023

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A Driving-Behavior-Based SoC Prediction Method for Light Urban Vehicles Powered by Supercapacitors

IEEE transactions on intelligent transportation systems, 2020-05, Vol.21 (5), p.2090-2099

2020

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Corrigendum-influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells

Chinese optics letters, 2016-08, Vol.14 (8), p.83501-83501

2016

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Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells

Chinese optics letters, 2016-04, Vol.14 (4), p.42302-42306

2016

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Improving the Efficiency of Sampling-based Motion Planners via Runtime Predictions for Motion-Planning Problems with Dynamics

2022 IEEE/RSJ International Conference on Intelligent Robots and Systems (IROS), 2022, p.4486-4491

2022

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A novel CuO/TiO2 hollow nanofiber film for non-enzymatic glucose sensing

2016-01

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A Fast Calculation and Rendering Method for Infrared Characteristics of Hypersonic Vehicle

Journal of physics. Conference series, 2020-07, Vol.1584 (1), p.12067

2020

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Low ohmic contact AlN/GaN HEMTs grown by MOCVD

Journal of semiconductors, 2013-11, Vol.34 (11), p.114004-1-114004-3

2013

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Comparison for the carrier mobility between the III–V nitrides and AlGaAs/GaAs heterostructure field-effect transistors

Journal of semiconductors, 2014-09, Vol.35 (9), p.94007-1-094007-6

2014

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DC and RF characteristics of enhancement-mode InAlN/GaN HEMT with fluorine treatment

Journal of semiconductors, 2014-04, Vol.35 (4), p.44002-1-044002-4

2014

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A Fault Diagnosis Method of Discrete Event System Based on Binary Decision Diagram

Artificial Intelligence Logic and Applications, p.153-161

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Unstrained InAlN/GaN heterostructures grown on sapphire substrates by MOCVD

Journal of semiconductors, 2014-11, Vol.35 (11), p.23-26

刘波尹甲运吕元杰敦少博张雄文冯志红蔡树军

2014

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A novel CuO/TiO 2 hollow nanofiber film for non-enzymatic glucose sensing

RSC advances, 2016, Vol.6 (102), p.99969-99976

2016

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Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

Journal of semiconductors, 2014-12, Vol.35 (12), p.28-31

赵景涛林兆军栾崇彪杨铭周阳吕元杰冯志红

2014

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The influence of the channel electric field distribution on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

Journal of semiconductors, 2014-12, Vol.35 (12), p.48-52

于英霞林兆军吕元杰冯志红栾崇彪杨铭王玉堂

2014

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W-band GaN MMIC PA with 257 mW output power at 86.5 GHz

Journal of semiconductors, 2015-08, Vol.36 (8), p.171-173

徐鹏宋旭波吕元杰王元刚敦少博尹甲运房玉龙顾国栋冯志红蔡树军

2015

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AlN/GaN high electron mobility transistors on sapphire substrates for Ka band applications

Journal of semiconductors, 2016-04, Vol.37 (4), p.69-72

宋旭波吕元杰顾国栋王元刚谭鑫周幸叶敦少博徐鹏尹甲运魏碧华冯志红蔡树军

2016

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High-stability 4H-SiC avalanche photodiodes for UV detection at high temperatures

Chinese optics letters, 2023-03, Vol.21 (3), p.32502

2023

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Hamiltonian Neural Network 6-DoF Rigid-Body Dynamic Modeling Based on Energy Variation Estimation

High-performance 4H-SiC p-i-n ultraviolet avalanche photodiodes with large active area

Source-field-plated Ga2O3 MOSFET with a breakdown voltage of 550 V

Coeffect of trapping behaviors on the performance of GaN-based devices

A high performance InAlN/GaN HEMT with low R on and gate leakage

Large-area 4H-SiC avalanche photodiodes with high gain and low dark current for visible-blind ultraviolet detection

Multi-agent hierarchical policy gradient for Air Combat Tactics emergence via self-play

Leveraging Single-Goal Predictions to Improve the Efficiency of Multi-Goal Motion Planning with Dynamics

A Driving-Behavior-Based SoC Prediction Method for Light Urban Vehicles Powered by Supercapacitors

Corrigendum-influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells

Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells

Improving the Efficiency of Sampling-based Motion Planners via Runtime Predictions for Motion-Planning Problems with Dynamics

A novel CuO/TiO2 hollow nanofiber film for non-enzymatic glucose sensing

A Fast Calculation and Rendering Method for Infrared Characteristics of Hypersonic Vehicle

Low ohmic contact AlN/GaN HEMTs grown by MOCVD

Comparison for the carrier mobility between the III–V nitrides and AlGaAs/GaAs heterostructure field-effect transistors

DC and RF characteristics of enhancement-mode InAlN/GaN HEMT with fluorine treatment

A Fault Diagnosis Method of Discrete Event System Based on Binary Decision Diagram

Unstrained InAlN/GaN heterostructures grown on sapphire substrates by MOCVD

A novel CuO/TiO 2 hollow nanofiber film for non-enzymatic glucose sensing

Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

The influence of the channel electric field distribution on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

W-band GaN MMIC PA with 257 mW output power at 86.5 GHz

AlN/GaN high electron mobility transistors on sapphire substrates for Ka band applications

High-stability 4H-SiC avalanche photodiodes for UV detection at high temperatures

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