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Effects of Gamma Irradiation on Magnetic Properties of Double-Interface CoFeB/MgO Multifilms

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.77-81

2019

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Development and Challenges of Reliability Modeling from Transistors to Circuits

IEEE journal of the Electron Devices Society, 2023-01, Vol.11, p.1-1

2023

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Radiation impact of swift heavy ion beams on double-interface CoFeB/MgO magnetic tunnel junctions

Applied physics letters, 2020-04, Vol.116 (17)

2020

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A Fast Template Matching Scheme of Visible and Infrared Image under Occluded Scenarios

IEEE access, 2022, Vol.10, p.1-1

2022

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SiC Planar MOSFETs With Built-In Reverse MOS-Channel Diode for Enhanced Performance

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.619-625

2020

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SEU and SET of 65 Bulk CMOS Flip-flops and Their Implications for RHBD

IEEE transactions on nuclear science, 2015-12, Vol.62 (6), p.2666-2672

2015

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A Novel Split-Gate-Trench MOSFET Integrated With Normal Gate and Built-In Channel Diode

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.839-845

2021

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Radiation hardening design for spin-orbit torque magnetic random access memory

2018 IEEE International Symposium on Circuits and Systems (ISCAS), 2018, p.1-4

2018

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High energy proton and heavy ion induced single event transient in 65-nm CMOS technology

Science China. Information sciences, 2017-12, Vol.60 (12), p.119-121, Article 120405

2017

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SiC Trench MOSFET With Embedded Schottky Super Barrier Rectifier for High Temperature Ruggedness

IEEE transactions on electron devices, 2023-11, Vol.70 (11), p.5786-5794

2023

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SiC Double-Trench MOSFETs With Embedded MOS-Channel Diode

IEEE transactions on electron devices, 2020-02, Vol.67 (2), p.582-587

2020

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Multi-bits error detection and fast recovery in RISC cores

Journal of semiconductors, 2015-11, Vol.36 (11), p.106-113

王晶杨星赵元富张伟功申娇邱柯妮

2015

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A high-efficiency aging test with new data processing method for semiconductor device

Microelectronics and reliability, 2023-04, Vol.143, p.114940, Article 114940

2023

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22nm FDSOI SRAM single event upset simulation analysis

Journal of physics. Conference series, 2021-05, Vol.1920 (1), p.12069

2021

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Total-Ionizing-Dose Irradiation-Induced Dielectric Field Enhancement for High-Voltage SOI LDMOS

IEEE electron device letters, 2019-04, Vol.40 (4), p.593-596

2019

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Novel Radiation Hardening Read/Write Circuits Using Feedback Connections for Spin-Orbit Torque Magnetic Random Access Memory

IEEE transactions on circuits and systems. I, Regular papers, 2019-05, Vol.66 (5), p.1853-1862

2019

Volltextzugriff (PDF)

Degradation of VDMOS Under Simultaneous and Sequential Stress of Gamma Ray Irradiation and Annealing Process

IEEE transactions on electron devices, 2023-06, Vol.70 (6), p.1-9

2023

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An aging simulation method based on the change of input vector inside the critical path

Journal of physics. Conference series, 2024-07, Vol.2791 (1), p.12059

2024

Volltextzugriff (PDF)

Radiation Hardened 12T SRAM With Crossbar-Based Peripheral Circuit in 28nm CMOS Technology

IEEE transactions on circuits and systems. I, Regular papers, 2021-07, Vol.68 (7), p.2962-2975

2021

Volltextzugriff (PDF)

A multi-parameter fitting method based on matrix transformation for device aging modeling

Microelectronics and reliability, 2023-03, Vol.142, p.114913, Article 114913

2023

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Radiation-Hardening Techniques for Spin Orbit Torque-MRAM Peripheral Circuitry

IEEE transactions on magnetics, 2018-11, Vol.54 (11), p.1-5

2018

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Degradation of Radiation-Hardened Vertical Double-Diffused Metal-Oxide-Semiconductor Field-Effect Transistor During Gamma Ray Irradiation Performed After Heavy Ion Striking

IEEE electron device letters, 2020-02, Vol.41 (2), p.216-219

2020

Volltextzugriff (PDF)

A Robust Hardened Latch Featuring Tolerance to Double-Node-Upset in 28nm CMOS for Spaceborne Application

IEEE transactions on circuits and systems. II, Express briefs, 2020-09, Vol.67 (9), p.1619-1623

2020

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Fast template matching in multi-modal image under pixel distribution mapping

Infrared physics & technology, 2022-12, Vol.127, p.104454, Article 104454

2022

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Gate Oxide Damage of SiC MOSFETs Induced by Heavy-Ion Strike

IEEE transactions on electron devices, 2021-08, Vol.68 (8), p.4010-4015

2021

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Effects of Gamma Irradiation on Magnetic Properties of Double-Interface CoFeB/MgO Multifilms

Development and Challenges of Reliability Modeling from Transistors to Circuits

Radiation impact of swift heavy ion beams on double-interface CoFeB/MgO magnetic tunnel junctions

A Fast Template Matching Scheme of Visible and Infrared Image under Occluded Scenarios

SiC Planar MOSFETs With Built-In Reverse MOS-Channel Diode for Enhanced Performance

SEU and SET of 65 Bulk CMOS Flip-flops and Their Implications for RHBD

A Novel Split-Gate-Trench MOSFET Integrated With Normal Gate and Built-In Channel Diode

Radiation hardening design for spin-orbit torque magnetic random access memory

High energy proton and heavy ion induced single event transient in 65-nm CMOS technology

SiC Trench MOSFET With Embedded Schottky Super Barrier Rectifier for High Temperature Ruggedness

SiC Double-Trench MOSFETs With Embedded MOS-Channel Diode

Multi-bits error detection and fast recovery in RISC cores

A high-efficiency aging test with new data processing method for semiconductor device

22nm FDSOI SRAM single event upset simulation analysis

Total-Ionizing-Dose Irradiation-Induced Dielectric Field Enhancement for High-Voltage SOI LDMOS

Novel Radiation Hardening Read/Write Circuits Using Feedback Connections for Spin-Orbit Torque Magnetic Random Access Memory

Degradation of VDMOS Under Simultaneous and Sequential Stress of Gamma Ray Irradiation and Annealing Process

An aging simulation method based on the change of input vector inside the critical path

Radiation Hardened 12T SRAM With Crossbar-Based Peripheral Circuit in 28nm CMOS Technology

A multi-parameter fitting method based on matrix transformation for device aging modeling

Radiation-Hardening Techniques for Spin Orbit Torque-MRAM Peripheral Circuitry

Degradation of Radiation-Hardened Vertical Double-Diffused Metal-Oxide-Semiconductor Field-Effect Transistor During Gamma Ray Irradiation Performed After Heavy Ion Striking

A Robust Hardened Latch Featuring Tolerance to Double-Node-Upset in 28nm CMOS for Spaceborne Application

Fast template matching in multi-modal image under pixel distribution mapping

Gate Oxide Damage of SiC MOSFETs Induced by Heavy-Ion Strike

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