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Insight into the structural evolution of porous and fractured media by forced aeration during heap leaching

International journal of mining science and technology, 2019-09, Vol.29 (5), p.803-807

2019

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Compact Modeling of Advanced Gate-All-Around Nanosheet FETs Using Artificial Neural Network

Micromachines (Basel), 2024-01, Vol.15 (2), p.218

2024

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MRI Characterization of the Pore Structure Evolution by Forced Aeration during Heap Leaching

Journal of physics. Conference series, 2020-09, Vol.1649 (1), p.12003

2020

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A Comprehensive Comparison of Different Wafer/Channel Orientations for Ultrascaled Nanosheet FETs

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1784-1791

2024

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A Comprehensive Comparison of Different Wafer/Channel Orientations for Ultra-Scaled Nanosheet FETs

IEEE transactions on electron devices, 2024-03, p.1-8

2024

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Performance Comparison between Neutralization Tailings and Flotation Tailings Used for Backfill Mix and Mechanism Analysis

Advances in materials science and engineering, 2016-01, Vol.2016, p.1-8

2016

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Transistor Compact Model Based on Multigradient Neural Network and Its Application in SPICE Circuit Simulations for Gate-All-Around Si Cold Source FETs

IEEE transactions on electron devices, 2021-09, Vol.68 (9), p.4181-4188

2021

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Improvement of FinFET electrical characteristics by hydrogen annealing

IEEE electron device letters, 2004-08, Vol.25 (8), p.541-543

2004

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A combined N/PFET CFET based design and logic technology framework for CMOS applications

IEEE transactions on computer-aided design of integrated circuits and systems, 2023-12, Vol.42 (12), p.1-1

2023

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Implementation of both high-hole and electron mobility in strained Si/strained Si1-yGey on relaxed Si1-xGex (x<y) virtual substrate

IEEE electron device letters, 2003-07, Vol.24 (7), p.460-462

2003

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Application Research of Integrated Prefabricated Module Computer Room Solution Based on Computer Communication

Journal of physics. Conference series, 2021-05, Vol.1915 (2), p.22029

2021

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The Properties of PdRu/C with respect to the Electro-oxidation of Methanol and Ethanol

International journal of electrochemical science, 2019-02, Vol.14 (2), p.1270-1282

2019

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Analytical Model of CFET Parasitic Capacitance for Advanced Technology Nodes

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.936-941

2022

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A Novel Zigzag SRAM Bitcell Design in the Complementary FET Framework

IEEE transactions on electron devices, 2023-09, Vol.70 (9), p.4622-4627

2023

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Impact of Lanthanum-Induced Dipoles on the Tunneling and Dielectric Properties of Gate-Stack

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1589-1594

2023

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Deep understanding of AC RTN in MuGFETs through new characterization method and impacts on logic circuits

2013 Symposium on VLSI Technology, 2013, p.T186-T187

2013

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The Device and Circuit Level Benchmark of Si-Based Cold Source FETs for Future Logic Technology

IEEE transactions on electron devices, 2022-06, Vol.69 (6), p.3483-3489

2022

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Research on the Machine Learning Platform Design Scheme Based on the Spark Platform

Proceedings of the World Conference on Intelligent and 3-D Technologies (WCI3DT 2022), p.579-590

Volltextzugriff (PDF)

Impact of Random Dipole Fluctuation-Induced Variation on Nanosheet Devices

IEEE electron device letters, 2023-10, Vol.44 (10), p.1-1

2023

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Effect of AnnealingAtomic Rearrangement on ElectrochemicalPerformance of Pd-NiCatalyst

International journal of electrochemical science, 2020-08, Vol.15 (8), p.7896-7913

2020

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Erratum: Symmetry of ferroelectric switching and domain walls in hafnium dioxide [Phys. Rev. B 106, 064104 (2022)]

Physical review. B, 2023-06, Vol.107 (21), Article 219902

2023

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Symmetry of ferroelectric switching and domain walls in hafnium dioxide

Physical review. B, 2022-08, Vol.106 (6), Article 064104

2022

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Electrochemical Performance of the Pd/C Catalyst Synthesized by Polyol Process

International journal of electrochemical science, 2019-08, Vol.14 (8), p.7871-7883

2019

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Strained-Si-strained-SiGe dual-channel layer structure as CMOS substrate for single workfunction metal-gate technology

IEEE electron device letters, 2004-06, Vol.25 (6), p.402-404

2004

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Optimizing Stope Structure in Fractured Orebody of a Vanadium mine after Grout by Numerical Simulation

2021 3rd International Conference on Artificial Intelligence and Advanced Manufacture, 2021, p.903-907

Yu, Shaofeng

2021

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Insight into the structural evolution of porous and fractured media by forced aeration during heap leaching

Compact Modeling of Advanced Gate-All-Around Nanosheet FETs Using Artificial Neural Network

MRI Characterization of the Pore Structure Evolution by Forced Aeration during Heap Leaching

A Comprehensive Comparison of Different Wafer/Channel Orientations for Ultrascaled Nanosheet FETs

A Comprehensive Comparison of Different Wafer/Channel Orientations for Ultra-Scaled Nanosheet FETs

Performance Comparison between Neutralization Tailings and Flotation Tailings Used for Backfill Mix and Mechanism Analysis

Transistor Compact Model Based on Multigradient Neural Network and Its Application in SPICE Circuit Simulations for Gate-All-Around Si Cold Source FETs

Improvement of FinFET electrical characteristics by hydrogen annealing

A combined N/PFET CFET based design and logic technology framework for CMOS applications

Implementation of both high-hole and electron mobility in strained Si/strained Si1-yGey on relaxed Si1-xGex (x<y) virtual substrate

Application Research of Integrated Prefabricated Module Computer Room Solution Based on Computer Communication

The Properties of PdRu/C with respect to the Electro-oxidation of Methanol and Ethanol

Analytical Model of CFET Parasitic Capacitance for Advanced Technology Nodes

A Novel Zigzag SRAM Bitcell Design in the Complementary FET Framework

Impact of Lanthanum-Induced Dipoles on the Tunneling and Dielectric Properties of Gate-Stack

Deep understanding of AC RTN in MuGFETs through new characterization method and impacts on logic circuits

The Device and Circuit Level Benchmark of Si-Based Cold Source FETs for Future Logic Technology

Research on the Machine Learning Platform Design Scheme Based on the Spark Platform

Impact of Random Dipole Fluctuation-Induced Variation on Nanosheet Devices

Effect of AnnealingAtomic Rearrangement on ElectrochemicalPerformance of Pd-NiCatalyst

Erratum: Symmetry of ferroelectric switching and domain walls in hafnium dioxide [Phys. Rev. B 106, 064104 (2022)]

Symmetry of ferroelectric switching and domain walls in hafnium dioxide

Electrochemical Performance of the Pd/C Catalyst Synthesized by Polyol Process

Strained-Si-strained-SiGe dual-channel layer structure as CMOS substrate for single workfunction metal-gate technology

Optimizing Stope Structure in Fractured Orebody of a Vanadium mine after Grout by Numerical Simulation

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