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Nonassociative learning implementation by a single memristor-based multi-terminal synaptic device

Nanoscale, 2016-12, Vol.8 (45), p.18897-18904

2016

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Emulation of biphasic plasticity in retinal electrical synapses for light-adaptive pattern pre-processing

Nanoscale, 2021-02, Vol.13 (6), p.3483-3492

2021

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Multifunctional Nanoionic Devices Enabling Simultaneous Heterosynaptic Plasticity and Efficient In‐Memory Boolean Logic

Advanced electronic materials, 2017-07, Vol.3 (7), p.n/a

2017

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Nonlinear Weight Quantification for Mitigating Stress Induced Disturb Effect on Multilevel RRAM-Based Neural Network Accelerator

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.1257-1261

2021

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Rotational Pattern Recognition by Spiking Correlated Neural Network Based on Dual‐Gated MoS2 Neuristor

Advanced intelligent systems, 2020-11, Vol.2 (11), p.n/a

2020

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Improvement of HfOx-Based RRAM Device Variation by Inserting ALD TiN Buffer Layer

IEEE electron device letters, 2018-06, Vol.39 (6), p.819-822

2018

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Dual-Gated MoS2 Neuristor for Neuromorphic Computing

ACS applied materials & interfaces, 2019-11, Vol.11 (44), p.41482-41489

2019

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Artificial Neural Network Based on Doped HfO2 Ferroelectric Capacitors With Multilevel Characteristics

IEEE electron device letters, 2019-08, Vol.40 (8), p.1309-1312

2019

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Multi-terminal ionic-gated low-power silicon nanowire synaptic transistors with dendritic functions for neuromorphic systems

Nanoscale, 2020-08, Vol.12 (3), p.16348-16358

2020

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A New Insight and Modeling of Pulse-to-Pulse Variability in Analog Resistive Memory for On-Chip Training

IEEE transactions on electron devices, 2022-06, Vol.69 (6), p.3100-3104

2022

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Temperature-Dependent Accuracy Analysis and Resistance Temperature Correction in RRAM-Based In-Memory Computing

IEEE transactions on electron devices, 2024-01, Vol.71 (1), p.1-7

2024

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Early-Stage Fluctuation in Low-Power Analog Resistive Memory: Impacts on Neural Network and Mitigation Approach

IEEE electron device letters, 2020-06, Vol.41 (6), p.940-943

2020

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Modulation of nonlinear resistive switching behavior of a TaOx-based resistive device through interface engineering

Nanotechnology, 2017-02, Vol.28 (5), p.055204-055204

2017

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Novel Vertical 3D Structure of TaOx-based RRAM with Self-localized Switching Region by Sidewall Electrode Oxidation

Scientific reports, 2016-02, Vol.6 (1), p.21020-21020, Article 21020

2016

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Observing the Growth of Metal Dendrites in Specimens Prepared by Fabricating Galvanic Cells and Electrolytic Cells

Journal of chemical education, 2020-02, Vol.97 (2), p.497-502

2020

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Self-Activation Neural Network Based on Self-Selective Memory Device With Rectified Multilevel States

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.4166-4171

2020

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Implementation of Neuronal Intrinsic Plasticity by Oscillatory Device in Spiking Neural Network

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1830-1834

2022

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Artificial Shape Perception Retina Network Based on Tunable Memristive Neurons

Scientific reports, 2018-09, Vol.8 (1), p.13727-9, Article 13727

2018

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Investigation of NbOx-based volatile switching device with self-rectifying characteristics

Science China. Information sciences, 2019-12, Vol.62 (12), p.229401, Article 229401

2019

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Thermal effect in ultra-high density 3D vertical and horizontal RRAM array

Physica scripta, 2019-04, Vol.94 (4), p.45001

2019

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Investigation and mitigation of Mott neuronal oscillation fluctuation in spiking neural network

Science China. Information sciences, 2024-02, Vol.67 (2), p.122404, Article 122404

2024

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Representative sampling analysis of radioactive airborne effluent for the stack system in a molten salt reactor

Progress in nuclear energy (New series), 2021-01, Vol.131, p.103596, Article 103596

2021

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Improvement of HfO x -Based RRAM Device Variation by Inserting ALD TiN Buffer Layer

IEEE electron device letters, 2018-06, Vol.39 (6), p.819-822

2018

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Artificial Neural Network Based on Doped HfO 2 Ferroelectric Capacitors With Multilevel Characteristics

IEEE electron device letters, 2019-08, Vol.40 (8), p.1309-1312

2019

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Dual-Gated MoS 2 Neuristor for Neuromorphic Computing

ACS applied materials & interfaces, 2019-11, Vol.11 (44), p.41482-41489

2019

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Nonassociative learning implementation by a single memristor-based multi-terminal synaptic device

Emulation of biphasic plasticity in retinal electrical synapses for light-adaptive pattern pre-processing

Multifunctional Nanoionic Devices Enabling Simultaneous Heterosynaptic Plasticity and Efficient In‐Memory Boolean Logic

Nonlinear Weight Quantification for Mitigating Stress Induced Disturb Effect on Multilevel RRAM-Based Neural Network Accelerator

Rotational Pattern Recognition by Spiking Correlated Neural Network Based on Dual‐Gated MoS2 Neuristor

Improvement of HfOx-Based RRAM Device Variation by Inserting ALD TiN Buffer Layer

Dual-Gated MoS2 Neuristor for Neuromorphic Computing

Artificial Neural Network Based on Doped HfO2 Ferroelectric Capacitors With Multilevel Characteristics

Multi-terminal ionic-gated low-power silicon nanowire synaptic transistors with dendritic functions for neuromorphic systems

A New Insight and Modeling of Pulse-to-Pulse Variability in Analog Resistive Memory for On-Chip Training

Temperature-Dependent Accuracy Analysis and Resistance Temperature Correction in RRAM-Based In-Memory Computing

Early-Stage Fluctuation in Low-Power Analog Resistive Memory: Impacts on Neural Network and Mitigation Approach

Modulation of nonlinear resistive switching behavior of a TaOx-based resistive device through interface engineering

Novel Vertical 3D Structure of TaOx-based RRAM with Self-localized Switching Region by Sidewall Electrode Oxidation

Observing the Growth of Metal Dendrites in Specimens Prepared by Fabricating Galvanic Cells and Electrolytic Cells

Self-Activation Neural Network Based on Self-Selective Memory Device With Rectified Multilevel States

Implementation of Neuronal Intrinsic Plasticity by Oscillatory Device in Spiking Neural Network

Artificial Shape Perception Retina Network Based on Tunable Memristive Neurons

Investigation of NbOx-based volatile switching device with self-rectifying characteristics

Thermal effect in ultra-high density 3D vertical and horizontal RRAM array

Investigation and mitigation of Mott neuronal oscillation fluctuation in spiking neural network

Representative sampling analysis of radioactive airborne effluent for the stack system in a molten salt reactor

Improvement of HfO x -Based RRAM Device Variation by Inserting ALD TiN Buffer Layer

Artificial Neural Network Based on Doped HfO 2 Ferroelectric Capacitors With Multilevel Characteristics

Dual-Gated MoS 2 Neuristor for Neuromorphic Computing

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