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Infrared SHG Materials CsM3Se6 (M = Ga/Sn, In/Sn): Phase Matchability Controlled by Dipole Moment of the Asymmetric Building Unit

Chemistry of materials, 2017-01, Vol.29 (2), p.499-503

2017

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Coexistence of Strong Second Harmonic Generation Response and Wide Band Gap in AZn4Ga5S12 (A=K, Rb, Cs) with 3D Diamond‐like Frameworks

Chemistry : a European journal, 2017-08, Vol.23 (43), p.10407-10412

2017

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Non‐centrosymmetric Selenides AZn4In5Se12 (A=Rb, Cs): Synthesis, Characterization and Nonlinear Optical Properties

Chemistry, an Asian journal, 2017-02, Vol.12 (4), p.453-458

2017

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Motif based high-throughput structure prediction of superconducting monolayer titanium boride

Physical chemistry chemical physics : PCCP, 2020-07, Vol.22 (28), p.16236-16243

2020

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Ba5Cu8In2S12: a quaternary semiconductor with a unique 3D copper-rich framework and ultralow thermal conductivity

Chemical communications (Cambridge, England), 2017-02, Vol.53 (17), p.2590-2593

2017

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Two excellent phase-matchable infrared nonlinear optical materials based on 3D diamond-like frameworks: RbGaSn2Se6 and RbInSn2Se6

Dalton transactions : an international journal of inorganic chemistry, 2017-06, Vol.46 (24), p.7714-7721

2017

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Atom Classification Model for Total Energy Evaluation of Two-Dimensional Multicomponent Materials

The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory, 2020-06, Vol.124 (22), p.4506-4511

2020

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Opening the Band Gap of Graphene via Fluorination for High-Performance Dual-Mode Photodetector Application

ACS applied materials & interfaces, 2019-06, Vol.11 (24), p.21702-21710

2019

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Tailored synthesis of nonlinear optical quaternary chalcohalides: Ba4Ge3S9Cl2, Ba4Si3Se9Cl2 and Ba4Ge3Se9Cl2

Dalton transactions : an international journal of inorganic chemistry, 2017-02, Vol.46 (8), p.2715-2721

2017

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Pb5Ga6ZnS15: a noncentrosymmetric framework with chains of T2-supertetrahedra

Dalton transactions : an international journal of inorganic chemistry, 2016-08, Vol.45 (31), p.12288-12291

2016

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Coexistence of Strong Second Harmonic Generation Response and Wide Band Gap in AZn 4 Ga 5 S 12 (A=K, Rb, Cs) with 3D Diamond-like Frameworks

Chemistry : a European journal, 2017-08, Vol.23 (43), p.10407-10412

2017

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Syntheses, structures, physical and electronic properties of quaternary semiconductors: Cs[RE9Cd4Se18] (RE = Tb-Tm)

Dalton transactions : an international journal of inorganic chemistry, 2016-01, Vol.45 (13), p.5775-5782

2016

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CsBi4Te6: a new facile synthetic method and mid-temperature thermoelectric performance

Dalton transactions : an international journal of inorganic chemistry, 2016-07, Vol.45 (30), p.11931-11934

2016

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(Cs6Cl)6Cs3[Ga53Se96]: A Unique Long Period-Stacking Structure of Layers Made from Ga2Se6 Dimers via Cis or Trans Intralayer Linking

Inorganic chemistry, 2016-02, Vol.55 (3), p.1014-1016

2016

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Inside Cover: Non‐centrosymmetric Selenides AZn4In5Se12 (A=Rb, Cs): Synthesis, Characterization and Nonlinear Optical Properties (Chem. Asian J. 4/2017)

Chemistry, an Asian journal, 2017-02, Vol.12 (4), p.386-386

2017

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Non-centrosymmetric Selenides AZn 4 In 5 Se 12 (A=Rb, Cs): Synthesis, Characterization and Nonlinear Optical Properties

Chemistry, an Asian journal, 2017-02, Vol.12 (4), p.453-458

2017

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Synthesis and characterization of mixed alkali borophosphate with a new 1D chain: Li3Cs2BP4O14

Inorganica Chimica Acta, 2017-09, Vol.466, p.174-179

2017

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A study of the construction of equations in (2 + 1) dimensions

Inverse problems, 2001-08, Vol.17 (4), p.1053-1060

2001

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The investigation into the Schwarz–Korteweg–de Vries equation and the Schwarz derivative in (2+1) dimensions

Journal of mathematical physics, 2000-07, Vol.41 (7), p.4747-4751

2000

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Ba 5 Cu 8 In 2 S 12 : a quaternary semiconductor with a unique 3D copper-rich framework and ultralow thermal conductivity

Chemical communications (Cambridge, England), 2017-02, Vol.53 (17), p.2590-2593

2017

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Ba5Cu8In2S12: a quaternary semiconductor with a unique 3D copper-rich framework and ultralow thermal conductivityElectronic supplementary information (ESI) available: Crystallographic data, experimental section and theoretical studies, together with additional figures and tables. CCDC 1504921. For ESI and crystallographic data in CIF or other electronic format see DOI: 10.1039/c6cc09904a

2017-02

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Two excellent phase-matchable infrared nonlinear optical materials based on 3D diamond-like frameworks: RbGaSn 2 Se 6 and RbInSn 2 Se 6

Dalton transactions : an international journal of inorganic chemistry, 2017-06, Vol.46 (24), p.7714-7721

2017

Volltextzugriff (PDF)

Two excellent phase-matchable infrared nonlinear optical materials based on 3D diamond-like frameworks: RbGaSn2Se6 and RbInSn2Se6Electronic supplementary information (ESI) available: Additional crystallographic data, CIF files, TG-DTA, reflection and FT-IR spectra, calculation results, together with additional tables and figures. CCDC 1504918 and 1504919. For ESI and crystallographic data in CIF or other electronic format see DOI: 10.1039/c7dt01384a

2017-06

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Infrared SHG Materials CsM 3 Se 6 (M = Ga/Sn, In/Sn): Phase Matchability Controlled by Dipole Moment of the Asymmetric Building Unit

Chemistry of materials, 2017-01, Vol.29 (2), p.499-503

2017

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AXII4XIII5Te12 (A = Rb, Cs; XII = Mn, Zn, Cd; XIII = Ga, In): quaternary semiconducting tellurides with very low thermal conductivitiesElectronic supplementary information (ESI) available: Crystallographic data, FT-IR and diffuse reflectance spectra, TG-DTA diagrams, together with additional figures and tables. CCDC 1489022-1489025. For ESI and crystallographic data in CIF or other electronic format see DOI: 10.1039/c6dt03630a

2016-11

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Infrared SHG Materials CsM3Se6 (M = Ga/Sn, In/Sn): Phase Matchability Controlled by Dipole Moment of the Asymmetric Building Unit

Coexistence of Strong Second Harmonic Generation Response and Wide Band Gap in AZn4Ga5S12 (A=K, Rb, Cs) with 3D Diamond‐like Frameworks

Non‐centrosymmetric Selenides AZn4In5Se12 (A=Rb, Cs): Synthesis, Characterization and Nonlinear Optical Properties

Motif based high-throughput structure prediction of superconducting monolayer titanium boride

Ba5Cu8In2S12: a quaternary semiconductor with a unique 3D copper-rich framework and ultralow thermal conductivity

Two excellent phase-matchable infrared nonlinear optical materials based on 3D diamond-like frameworks: RbGaSn2Se6 and RbInSn2Se6

Atom Classification Model for Total Energy Evaluation of Two-Dimensional Multicomponent Materials

Opening the Band Gap of Graphene via Fluorination for High-Performance Dual-Mode Photodetector Application

Tailored synthesis of nonlinear optical quaternary chalcohalides: Ba4Ge3S9Cl2, Ba4Si3Se9Cl2 and Ba4Ge3Se9Cl2

Pb5Ga6ZnS15: a noncentrosymmetric framework with chains of T2-supertetrahedra

Coexistence of Strong Second Harmonic Generation Response and Wide Band Gap in AZn 4 Ga 5 S 12 (A=K, Rb, Cs) with 3D Diamond-like Frameworks

Syntheses, structures, physical and electronic properties of quaternary semiconductors: Cs[RE9Cd4Se18] (RE = Tb-Tm)

CsBi4Te6: a new facile synthetic method and mid-temperature thermoelectric performance

(Cs6Cl)6Cs3[Ga53Se96]: A Unique Long Period-Stacking Structure of Layers Made from Ga2Se6 Dimers via Cis or Trans Intralayer Linking

Inside Cover: Non‐centrosymmetric Selenides AZn4In5Se12 (A=Rb, Cs): Synthesis, Characterization and Nonlinear Optical Properties (Chem. Asian J. 4/2017)

Non-centrosymmetric Selenides AZn 4 In 5 Se 12 (A=Rb, Cs): Synthesis, Characterization and Nonlinear Optical Properties

Synthesis and characterization of mixed alkali borophosphate with a new 1D chain: Li3Cs2BP4O14

A study of the construction of equations in (2 + 1) dimensions

The investigation into the Schwarz–Korteweg–de Vries equation and the Schwarz derivative in (2+1) dimensions

Ba 5 Cu 8 In 2 S 12 : a quaternary semiconductor with a unique 3D copper-rich framework and ultralow thermal conductivity

Two excellent phase-matchable infrared nonlinear optical materials based on 3D diamond-like frameworks: RbGaSn 2 Se 6 and RbInSn 2 Se 6

Infrared SHG Materials CsM 3 Se 6 (M = Ga/Sn, In/Sn): Phase Matchability Controlled by Dipole Moment of the Asymmetric Building Unit

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