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Abnormal positive bias stress instability of In–Ga–Zn–O thin-film transistors with low-temperature Al2O3 gate dielectric

Applied physics letters, 2016-01, Vol.108 (3)

2016

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High-Voltage Amorphous InGaZnO TFT With Al2O3 High- k Dielectric for Low-Temperature Monolithic 3-D Integration

IEEE transactions on electron devices, 2016-10, Vol.63 (10), p.3944-3949

2016

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1-V Full-Swing Depletion-Load a-In-Ga-Zn-O Inverters for Back-End-of-Line Compatible 3D Integration

IEEE electron device letters, 2016-04, Vol.37 (4), p.441-444

2016

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Influence of Passivation Layers on Characteristics of a-InGaZnO Thin-Film Transistors

IEEE electron device letters, 2011-02, Vol.32 (2), p.161-163

2011

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Effects of Mechanical Strains on the Characteristics of Top-Gate Staggered a-IGZO Thin-Film Transistors Fabricated on Polyimide-Based Nanocomposite Substrates

IEEE transactions on electron devices, 2012-07, Vol.59 (7), p.1956-1962

2012

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Amorphous InGaZnO Thin-Film Transistors Compatible With Roll-to-Roll Fabrication at Room Temperature

IEEE electron device letters, 2012-01, Vol.33 (1), p.47-49

2012

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Flexible Three-Bit-Per-Cell Resistive Switching Memory Using a-IGZO TFTs

IEEE electron device letters, 2013-10, Vol.34 (10), p.1265-1267

2013

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Top-Gate Staggered a-IGZO TFTs Adopting the Bilayer Gate Insulator for Driving AMOLED

IEEE transactions on electron devices, 2012-06, Vol.59 (6), p.1701-1708

2012

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22.3: Flexible Top-gate Amorphous InGaZnO TFTs Array for AMOLED Applications

SID International Symposium Digest of technical papers, 2011-06, Vol.42 (1), p.284-287

2011

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P-37: Room Temperature Top-Gate Self-Aligned Amorphous InGaZnO TFTs Fabricated on Colorless Polyimide Substrate

SID International Symposium Digest of technical papers, 2010-05, Vol.41 (1), p.1353-1355

2010

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Oxide-Semiconductor-Based TFTs for Displays and Flexible Electronics

ECS transactions, 2013, Vol.50 (6), p.293-309

2013

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26.2: Flexible Hybrid Substrates of Roll-to-Roll Manufacturing for Flexible Display Application

SID International Symposium Digest of technical papers, 2012-06, Vol.43 (1), p.345-347

2012

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Reliable high-voltage amorphous InGaZnO TFT for monolithic 3D integration

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2016, p.1-2

2016

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Multi-bit-per-Cell a-IGZO TFT resistive-switching memory for system-on-plastic applications

2012 International Electron Devices Meeting, 2012, p.5.3.1-5.3.4

2012

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P‐11: High Mobility BCE Oxide TFT Technology for Demux Driving Notebook LCD

SID International Symposium Digest of technical papers, 2024-06, Vol.55 (1), p.1404-1406

2024

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High-Voltage Amorphous InGaZnO TFT With Al 2 O 3 High- $k$ Dielectric for Low-Temperature Monolithic 3-D Integration

IEEE transactions on electron devices, 2016-10, Vol.63 (10), p.3944-3949

2016

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High-Voltage Amorphous InGaZnO TFT With Al2O3 High-[Formula Omitted] Dielectric for Low-Temperature Monolithic 3-D Integration

IEEE transactions on electron devices, 2016-10, Vol.63 (10), p.3944

2016

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Abnormal positive bias stress instability of In–Ga–Zn–O thin-film transistors with low-temperature Al{sub 2}O{sub 3} gate dielectric

Applied physics letters, 2016-01, Vol.108 (3)

2016

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1-V Full-Swing Depletion-Load a-In-G-Zn-O Inverters for Back-End-of-Line Compatible 3D Integration

IEEE electron device letters, 2016-04, Vol.37 (4), p.441

2016

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2.2-inch QQVGA AMOLED driven by low temperature top-gate a-IGZO TFT

2010 23rd Annual Meeting of the IEEE Photonics Society, 2010, p.307-308

2010

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Grain size and plasma doping effects on CVD-based 2D transition metal dichalcogenide

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO), 2016, p.501-504

2016

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P‐169: A 31‐inch 4K2K Top‐emission OLED Display Using Good Uniformity and Long‐term Reliability Top‐gate Self‐aligned IGZO TFTs

SID International Symposium Digest of technical papers, 2018-05, Vol.49 (1), p.1796-1799

2018

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Low-cost embedded RRAM technology for system-on-plastic integration using a-IGZO TFTs

2013 Twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2013, p.71-74

2013

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Abnormal positive bias stress instability of In–Ga–Zn–O thin-film transistors with low-temperature Al2O3 gate dielectric

High-Voltage Amorphous InGaZnO TFT With Al2O3 High- k Dielectric for Low-Temperature Monolithic 3-D Integration

1-V Full-Swing Depletion-Load a-In-Ga-Zn-O Inverters for Back-End-of-Line Compatible 3D Integration

Influence of Passivation Layers on Characteristics of a-InGaZnO Thin-Film Transistors

Effects of Mechanical Strains on the Characteristics of Top-Gate Staggered a-IGZO Thin-Film Transistors Fabricated on Polyimide-Based Nanocomposite Substrates

Amorphous InGaZnO Thin-Film Transistors Compatible With Roll-to-Roll Fabrication at Room Temperature

Flexible Three-Bit-Per-Cell Resistive Switching Memory Using a-IGZO TFTs

Top-Gate Staggered a-IGZO TFTs Adopting the Bilayer Gate Insulator for Driving AMOLED

22.3: Flexible Top-gate Amorphous InGaZnO TFTs Array for AMOLED Applications

P-37: Room Temperature Top-Gate Self-Aligned Amorphous InGaZnO TFTs Fabricated on Colorless Polyimide Substrate

Oxide-Semiconductor-Based TFTs for Displays and Flexible Electronics

26.2: Flexible Hybrid Substrates of Roll-to-Roll Manufacturing for Flexible Display Application

Reliable high-voltage amorphous InGaZnO TFT for monolithic 3D integration

Multi-bit-per-Cell a-IGZO TFT resistive-switching memory for system-on-plastic applications

P‐11: High Mobility BCE Oxide TFT Technology for Demux Driving Notebook LCD

High-Voltage Amorphous InGaZnO TFT With Al 2 O 3 High- $k$ Dielectric for Low-Temperature Monolithic 3-D Integration

High-Voltage Amorphous InGaZnO TFT With Al2O3 High-[Formula Omitted] Dielectric for Low-Temperature Monolithic 3-D Integration

Abnormal positive bias stress instability of In–Ga–Zn–O thin-film transistors with low-temperature Al{sub 2}O{sub 3} gate dielectric

1-V Full-Swing Depletion-Load a-In-G-Zn-O Inverters for Back-End-of-Line Compatible 3D Integration

2.2-inch QQVGA AMOLED driven by low temperature top-gate a-IGZO TFT

Grain size and plasma doping effects on CVD-based 2D transition metal dichalcogenide

P‐169: A 31‐inch 4K2K Top‐emission OLED Display Using Good Uniformity and Long‐term Reliability Top‐gate Self‐aligned IGZO TFTs

Low-cost embedded RRAM technology for system-on-plastic integration using a-IGZO TFTs

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