UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

First Demonstration of Yttria-Stabilized Hafnia-Based Long-Retention Solid-State Electrolyte-Gated Transistor for Human-Like Neuromorphic Computing

Small (Weinheim an der Bergstrasse, Germany), 2024-05, Vol.20 (19), p.e2309467-e2309467

2024

Volltextzugriff (PDF)

High-Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self-Assembled Monolayer Doping

Advanced functional materials, 2015-07, Vol.25 (27), p.4219-4227

2015

Volltextzugriff (PDF)

Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices

Nano letters, 2015-07, Vol.15 (7), p.4553-4556

2015

Volltextzugriff (PDF)

Hysteresis Modulation on Van der Waals‐Based Ferroelectric Field‐Effect Transistor by Interfacial Passivation Technique and Its Application in Optic Neural Networks

Small (Weinheim an der Bergstrasse, Germany), 2020-12, Vol.16 (49), p.e2004371-n/a

2020

Volltextzugriff (PDF)

Infrared Detectable MoS2 Phototransistor and Its Application to Artificial Multilevel Optic-Neural Synapse

ACS nano, 2019-09, Vol.13 (9), p.10294-10300

2019

Volltextzugriff (PDF)

A High-Performance WSe2/h-BN Photodetector using a Triphenylphosphine (PPh3)-Based n-Doping Technique

Advanced materials (Weinheim), 2016-06, Vol.28 (24), p.4824-4831

2016

Volltextzugriff (PDF)

Analytical Model of Contact Resistance in Vertically Stacked Nanosheet FETs for Sub-3-nm Technology Node

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.930-935

2022

Volltextzugriff (PDF)

Enhancement of Synaptic Characteristics Achieved by the Optimization of Proton–Electron Coupling Effect in a Solid‐State Electrolyte‐Gated Transistor

Small (Weinheim an der Bergstrasse, Germany), 2021-07, Vol.17 (30), p.e2100242-n/a

2021

Volltextzugriff (PDF)

Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design

Advanced materials (Weinheim), 2016-02, Vol.28 (5), p.864-870

2016

Volltextzugriff (PDF)

A Hybrid RF MEMS Switch Actuated by the Combination of Bidirectional Thermal Actuations and Electrostatic Holding

IEEE transactions on microwave theory and techniques, 2020-08, Vol.68 (8), p.3461-3470

2020

Volltextzugriff (PDF)

A minimally invasive flexible electrode array for simultaneous recording of ECoG signals from multiple brain regions

Lab on a chip, 2021-06, Vol.21 (12), p.2383-2397

2021

Volltextzugriff (PDF)

A neural probe for concurrent real-time measurement of multiple neurochemicals with electrophysiology in multiple brain regions in vivo

Proceedings of the National Academy of Sciences - PNAS, 2023-07, Vol.120 (28), p.e2219231120-e2219231120

2023

Volltextzugriff (PDF)

A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films

Materials, 2020-07, Vol.13 (13), p.2968

2020

Volltextzugriff (PDF)

Schottky barrier height modulation of metal–interlayer–semiconductor structure depending on contact surface orientation for multi-gate transistors

Applied physics letters, 2019-01, Vol.114 (1)

2019

Volltextzugriff (PDF)

Enhancement of DRAM Performance by Adopting Metal-Interlayer-Semiconductor Source/Drain Contact Structure on DRAM Cell

IEEE transactions on electron devices, 2021-05, Vol.68 (5), p.2275-2280

2021

Volltextzugriff (PDF)

Performance Analysis on Complementary FET (CFET) Relative to Standard CMOS With Nanosheet FET

IEEE journal of the Electron Devices Society, 2022, Vol.10, p.78-82

2022

Volltextzugriff (PDF)

A multiple negative differential resistance heterojunction device and its circuit application to ternary static random access memory

Nanoscale horizons, 2020-03, Vol.5 (4), p.654-662

2020

Volltextzugriff (PDF)

LER-Induced Random Variation-Immune Effect of Metal-Interlayer-Semiconductor Source/Drain Structure on N-Type Ge Junctionless FinFETs

IEEE transactions on electron devices, 2021-03, Vol.68 (3), p.1340-1345

2021

Volltextzugriff (PDF)

Excellent Improvement of Contact Resistivity and Thermal Stability for High Temperature Process After Silicidation of TiSi2 Through Ta Interlayer for Diffusion Barrier

IEEE electron device letters, 2023-07, Vol.44 (7), p.1040-1043

2023

Volltextzugriff (PDF)

Device Design Guidelines of 3-nm Node Complementary FET (CFET) in Perspective of Electrothermal Characteristics

IEEE access, 2022, Vol.10, p.41112-41118

2022

Volltextzugriff (PDF)

Analysis of Drain Linear Current Turn-Around Effect in Off-State Stress Mode in pMOSFET

IEEE electron device letters, 2020-06, Vol.41 (6), p.804-807

2020

Volltextzugriff (PDF)

Performance Improvement in DRAM Cell Using Novel Nitride/Metal Spacers Structure

IEEE access, 2024, Vol.12, p.153203-153208

2024

Volltextzugriff (PDF)

Universal Metal-Interlayer-Semiconductor Contact Modeling Considering Interface-State Effect on Contact Resistivity Degradation

IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.4982-4987

2018

Volltextzugriff (PDF)

Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO2 With Record-Low Leakage Current

IEEE electron device letters, 2019-04, Vol.40 (4), p.502-505

2019

Volltextzugriff (PDF)

Rhenium Diselenide (ReSe2) Near‐Infrared Photodetector: Performance Enhancement by Selective p‐Doping Technique

Advanced science, 2019-11, Vol.6 (21), p.1901255-n/a

2019

Volltextzugriff (PDF)

1 – 25 von 332

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(268)
Mit Volltextzugriff
(278)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(226)
Technology
(119)
Physical Sciences
(100)
Life Sciences & Biomedicine
(77)
Materials Science
(70)
Materials Science, Multidisciplinary
(63)
Physics
(60)
Engineering
(54)
Physics, Applied
(53)
Science & Technology - Other Topics
(52)
Engineering, Electrical & Electronic
(49)
Nanoscience & Nanotechnology
(48)
Chemistry
(47)
Male
(45)
Germanium
(34)
Animals
(33)
Female
(32)
Humans
(29)
Toxicology
(28)
Doping
(25)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(3)
... seit 90 Tagen
(8)

Menü

Weitere Dienste

Einstellungen

First Demonstration of Yttria-Stabilized Hafnia-Based Long-Retention Solid-State Electrolyte-Gated Transistor for Human-Like Neuromorphic Computing

High-Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self-Assembled Monolayer Doping

Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices

Hysteresis Modulation on Van der Waals‐Based Ferroelectric Field‐Effect Transistor by Interfacial Passivation Technique and Its Application in Optic Neural Networks

Infrared Detectable MoS2 Phototransistor and Its Application to Artificial Multilevel Optic-Neural Synapse

A High-Performance WSe2/h-BN Photodetector using a Triphenylphosphine (PPh3)-Based n-Doping Technique

Analytical Model of Contact Resistance in Vertically Stacked Nanosheet FETs for Sub-3-nm Technology Node

Enhancement of Synaptic Characteristics Achieved by the Optimization of Proton–Electron Coupling Effect in a Solid‐State Electrolyte‐Gated Transistor

Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design

A Hybrid RF MEMS Switch Actuated by the Combination of Bidirectional Thermal Actuations and Electrostatic Holding

A minimally invasive flexible electrode array for simultaneous recording of ECoG signals from multiple brain regions

A neural probe for concurrent real-time measurement of multiple neurochemicals with electrophysiology in multiple brain regions in vivo

A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films

Schottky barrier height modulation of metal–interlayer–semiconductor structure depending on contact surface orientation for multi-gate transistors

Enhancement of DRAM Performance by Adopting Metal-Interlayer-Semiconductor Source/Drain Contact Structure on DRAM Cell

Performance Analysis on Complementary FET (CFET) Relative to Standard CMOS With Nanosheet FET

A multiple negative differential resistance heterojunction device and its circuit application to ternary static random access memory

LER-Induced Random Variation-Immune Effect of Metal-Interlayer-Semiconductor Source/Drain Structure on N-Type Ge Junctionless FinFETs

Excellent Improvement of Contact Resistivity and Thermal Stability for High Temperature Process After Silicidation of TiSi2 Through Ta Interlayer for Diffusion Barrier

Device Design Guidelines of 3-nm Node Complementary FET (CFET) in Perspective of Electrothermal Characteristics

Analysis of Drain Linear Current Turn-Around Effect in Off-State Stress Mode in pMOSFET

Performance Improvement in DRAM Cell Using Novel Nitride/Metal Spacers Structure

Universal Metal-Interlayer-Semiconductor Contact Modeling Considering Interface-State Effect on Contact Resistivity Degradation

Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using Y Doped ZrO2 With Record-Low Leakage Current

Rhenium Diselenide (ReSe2) Near‐Infrared Photodetector: Performance Enhancement by Selective p‐Doping Technique

Suchergebnisse filtern