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Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads

Scientific reports, 2024-04, Vol.14 (1), p.9426-9426, Article 9426

2024

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Multi-Level Neuromorphic Devices Built on Emerging Ferroic Materials: A Review

Frontiers in neuroscience, 2021-04, Vol.15, p.661667-661667

2021

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Ultrathin SiGe Shell Channel p-Type FinFET on Bulk Si for Sub-10-nm Technology Nodes

IEEE transactions on electron devices, 2018-04, Vol.65 (4), p.1290-1297

2018

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Design and analysis of nanowire p-type MOSFET coaxially having silicon core and germanium peripheral channel

Japanese Journal of Applied Physics, 2016-11, Vol.55 (11), p.114001

2016

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A Quantum-Well Charge-Trap Synaptic Transistor With Highly Linear Weight Tunability

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.834-840

2020

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Si-core/SiGe-shell channel nanowire FET for sub-10-nm logic technology in the THz regime

ETRI journal, 2019-12, Vol.41 (6), p.829-837

2019

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Processing and Characterization of Ultra-thin Poly-crystalline Silicon for Memory and Logic Applications

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2018, 18(2), 80, pp.172-179

2018

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Design and Characterization of Semi-Floating-Gate Synaptic Transistor

Micromachines (Basel), 2019-01, Vol.10 (1), p.32

2019

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Si‐core/SiGe‐shell channel nanowire FET for sub‐10‐nm logic technology in the THz regime

ETRI Journal, 2019, 41(6), , pp.829-837

2019

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Characterization and Optimization of Inverted-T FinFET Under Nanoscale Dimensions

IEEE transactions on electron devices, 2018-08, Vol.65 (8), p.3521-3527

2018

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Interfacial Layer Engineering in Sub-5-nm HZO: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness

IEEE transactions on electron devices, 2023-06, Vol.70 (6), p.1-8

2023

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A Highly Scalable and Energy-Efficient 1T DRAM Embedding a SiGe Quantum Well Structure for Significant Retention Enhancement

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2018, p.255-257

2018

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A Band-Engineered One-Transistor DRAM With Improved Data Retention and Power Efficiency

IEEE electron device letters, 2019-04, Vol.40 (4), p.562-565

2019

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"Ritual for Peace": For Chamber Ensemble

Yu, Eunseon

2021

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Ferroelectric FET Based Coupled-Oscillatory Network for Edge Detection

IEEE electron device letters, 2021-11, Vol.42 (11), p.1670-1673

2021

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Fabrication and Characterization of a Thin-Body Poly-Si 1T DRAM With Charge-Trap Effect

IEEE electron device letters, 2019-04, Vol.40 (4), p.566-569

2019

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A Silicon-Compatible Synaptic Transistor Capable of Multiple Synaptic Weights toward Energy-Efficient Neuromorphic Systems

Electronics (Basel), 2019-10, Vol.8 (10), p.1102

2019

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An accurate simulation study on capacitance-voltage characteristics of metal-oxide-semiconductor field-effect transistors in novel structures

Physica. B, Condensed matter, 2017-09, Vol.521, p.305-311

2017

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Muyong

Yu, Eunseon

2018

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Simulation of One-Transistor Dynamic Random-Access Memory Based on Symmetric Double-Gate Si Junctionless Transistor

Journal of nanoscience and nanotechnology, 2018-09, Vol.18 (9), p.6593-6597

2018

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Pd/IGZO/p+‑Si Synaptic Device with Self-Graded Oxygen Concentrations for Highly Linear Weight Adjustability and Improved Energy Efficiency

ACS applied electronic materials, 2020-08, Vol.2 (8), p.2390-2397

2020

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SiGe Heterojunction FinFET Towards Tera-Hertz Applications

Journal of the Korean Physical Society, 2018, 72(4), , pp.527-532

2018

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Structural and Optical Characteristics of Epitaxially Grown SiGe on Si for Electronic and Photonic Device Applications

Journal of nanoelectronics and optoelectronics, 2017-10, Vol.12 (10), p.1129-1133

2017

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Effects of nitride trap layer properties on location of charge centroid in charge-trap flash memory

2017 Silicon Nanoelectronics Workshop (SNW), 2017, p.79-80

2017

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A Study on the Career Education and Guidance Teachers’ Occupational Identity Based on the Grounded Theory

The Journal of Career Education Research, 2017-06, Vol.30 (2), p.127-156

2017

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Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads

Multi-Level Neuromorphic Devices Built on Emerging Ferroic Materials: A Review

Ultrathin SiGe Shell Channel p-Type FinFET on Bulk Si for Sub-10-nm Technology Nodes

Design and analysis of nanowire p-type MOSFET coaxially having silicon core and germanium peripheral channel

A Quantum-Well Charge-Trap Synaptic Transistor With Highly Linear Weight Tunability

Si-core/SiGe-shell channel nanowire FET for sub-10-nm logic technology in the THz regime

Processing and Characterization of Ultra-thin Poly-crystalline Silicon for Memory and Logic Applications

Design and Characterization of Semi-Floating-Gate Synaptic Transistor

Si‐core/SiGe‐shell channel nanowire FET for sub‐10‐nm logic technology in the THz regime

Characterization and Optimization of Inverted-T FinFET Under Nanoscale Dimensions

Interfacial Layer Engineering in Sub-5-nm HZO: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness

A Highly Scalable and Energy-Efficient 1T DRAM Embedding a SiGe Quantum Well Structure for Significant Retention Enhancement

A Band-Engineered One-Transistor DRAM With Improved Data Retention and Power Efficiency

"Ritual for Peace": For Chamber Ensemble

Ferroelectric FET Based Coupled-Oscillatory Network for Edge Detection

Fabrication and Characterization of a Thin-Body Poly-Si 1T DRAM With Charge-Trap Effect

A Silicon-Compatible Synaptic Transistor Capable of Multiple Synaptic Weights toward Energy-Efficient Neuromorphic Systems

An accurate simulation study on capacitance-voltage characteristics of metal-oxide-semiconductor field-effect transistors in novel structures

Muyong

Simulation of One-Transistor Dynamic Random-Access Memory Based on Symmetric Double-Gate Si Junctionless Transistor

Pd/IGZO/p+‑Si Synaptic Device with Self-Graded Oxygen Concentrations for Highly Linear Weight Adjustability and Improved Energy Efficiency

SiGe Heterojunction FinFET Towards Tera-Hertz Applications

Structural and Optical Characteristics of Epitaxially Grown SiGe on Si for Electronic and Photonic Device Applications

Effects of nitride trap layer properties on location of charge centroid in charge-trap flash memory

A Study on the Career Education and Guidance Teachers’ Occupational Identity Based on the Grounded Theory

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