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1/f-Noise in AlGaN/GaN Nanowire Omega-FinFETs

IEEE electron device letters, 2017-02, Vol.38 (2), p.252-254

2017

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Comparison for 1/ Noise Characteristics of AlGaN/GaN FinFET and Planar MISHFET

IEEE transactions on electron devices, 2017-09, Vol.64 (9), p.3634-3638

2017

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Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer

Nanomaterials (Basel, Switzerland), 2020-10, Vol.10 (11), p.2175

2020

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Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator

Nanomaterials (Basel, Switzerland), 2023-02, Vol.13 (5), p.898

2023

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Performance of AlGaN/GaN MISHFET using dual-purpose thin Al2O3 layer for surface protection and gate insulator

Solid-state electronics, 2014-10, Vol.100, p.11-14

2014

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Normally-off GaN MOSFETs on insulating substrate

Solid-state electronics, 2013-12, Vol.90, p.79-85

2013

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Capacitance–voltage characterization of surface-treated Al2O3/GaN metal–oxide–semiconductor structures

Microelectronic engineering, 2013-09, Vol.109, p.10-12

2013

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Charge trapping and interface characteristics in normally-off Al2O3/GaN-MOSFETs

Microelectronic engineering, 2011-07, Vol.88 (7), p.1225-1227

2011

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Performance enhancement of GaN SB-MOSFET on Si substrate using two-step growth method

Microelectronic engineering, 2011-07, Vol.88 (7), p.1221-1224

2011

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Comparison for 1/ f Noise Characteristics of AlGaN/GaN FinFET and Planar MISHFET

IEEE transactions on electron devices, 2017-09, Vol.64 (9), p.3634-3638

2017

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Device Performances Related to Gate Leakage Current in Al₂O₃/AlGaN/GaN MISHFETs

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2014, 14(5), 59, pp.601-608

2014

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Effect of gate dielectrics on characteristics of high-energy proton-irradiated AlGaN/GaN MISHEMTs

Radiation physics and chemistry (Oxford, England : 1993), 2021-07, Vol.184, p.109473, Article 109473

2021

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Mechanism of Proton-Induced electrical degradation of AlGaN/GaN high electron mobility transistors

Solid-state electronics, 2021-01, Vol.175, p.107957, Article 107957

2021

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Exploration of the principles of ‘practical’ integration in Social Studies education of elementary school

Korean Association For Learner-Centered Curriculum And Instruction, 2018-12, Vol.18 (24), p.375-399

Bae, YoungHo

2018

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The Utilization of TV News for Social Studies Education Based on ‘The Field of Problem’

Social Studies Education, 2018-12, Vol.57 (4), p.119-133

Bae, YoungHo

2018

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Capacitance-voltage characterization of surface-treated Al2O3/GaN metalaoxideasemiconductor structures

Microelectronic engineering, 2013-09, Vol.109, p.10-12

2013

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1/f Noise Characteristics of AlGaN/GaN FinFETs with and without TMAH surface treatment

Microelectronic engineering, 2015-11, Vol.147, p.134-136

2015

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Improvement of Proton Radiation Hardness Using ALD-Deposited Al 2 O 3 Gate Insulator in GaN-Based MIS-HEMTs

ECS journal of solid state science and technology, 2019, Vol.8 (12), p.Q245-Q248

2019

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Capacitance-voltage characterization of surface-treated Al2O3/GaN metal-oxides-emiconductor structures: Insulating Films on Semiconductors 2013

Microelectronic engineering, 2013, Vol.109, p.10-12

2013

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Performance of AlGaN/GaN MISHFET using dual-purpose thin Al sub(2)O sub(3) layer for surface protection and gate insulator

Solid-state electronics, 2014-10, Vol.100, p.11-14

2014

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1/f -noise characteristics of AlGaN/GaN omega shaped nanowire FETs

2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2016, p.44-47

2016

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Performance of GaN Metal-Oxide-Semiconductor Field-Effect Transistor with Regrown n super(+)-Source/Drain on a Selectively Etched GaN

Japanese Journal of Applied Physics, 2013-06, Vol.52 (6R)

2013

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Performance of GaN Metal--Oxide--Semiconductor Field-Effect Transistor with Regrown n+-Source/Drain on a Selectively Etched GaN

Japanese Journal of Applied Physics, 2013-06, Vol.52 (6), p.061001-061001-5

2013

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Charge trapping and interface characteristics in normally-off Al sub(2O) sub(3)/GaN-MOSFETs

Microelectronic engineering, 2011-07, Vol.88 (7), p.1225-1227

2011

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Double-gate 1T-DRAM cell using nonvolatile memory function for improved performance

Solid-state electronics, 2011-05, Vol.59 (1), p.39-43

2011

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1/f-Noise in AlGaN/GaN Nanowire Omega-FinFETs

Comparison for 1/ Noise Characteristics of AlGaN/GaN FinFET and Planar MISHFET

Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer

Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator

Performance of AlGaN/GaN MISHFET using dual-purpose thin Al2O3 layer for surface protection and gate insulator

Normally-off GaN MOSFETs on insulating substrate

Capacitance–voltage characterization of surface-treated Al2O3/GaN metal–oxide–semiconductor structures

Charge trapping and interface characteristics in normally-off Al2O3/GaN-MOSFETs

Performance enhancement of GaN SB-MOSFET on Si substrate using two-step growth method

Comparison for 1/ f Noise Characteristics of AlGaN/GaN FinFET and Planar MISHFET

Device Performances Related to Gate Leakage Current in Al₂O₃/AlGaN/GaN MISHFETs

Effect of gate dielectrics on characteristics of high-energy proton-irradiated AlGaN/GaN MISHEMTs

Mechanism of Proton-Induced electrical degradation of AlGaN/GaN high electron mobility transistors

Exploration of the principles of ‘practical’ integration in Social Studies education of elementary school

The Utilization of TV News for Social Studies Education Based on ‘The Field of Problem’

Capacitance-voltage characterization of surface-treated Al2O3/GaN metalaoxideasemiconductor structures

1/f Noise Characteristics of AlGaN/GaN FinFETs with and without TMAH surface treatment

Improvement of Proton Radiation Hardness Using ALD-Deposited Al 2 O 3 Gate Insulator in GaN-Based MIS-HEMTs

Capacitance-voltage characterization of surface-treated Al2O3/GaN metal-oxides-emiconductor structures: Insulating Films on Semiconductors 2013

Performance of AlGaN/GaN MISHFET using dual-purpose thin Al sub(2)O sub(3) layer for surface protection and gate insulator

1/f -noise characteristics of AlGaN/GaN omega shaped nanowire FETs

Performance of GaN Metal-Oxide-Semiconductor Field-Effect Transistor with Regrown n super(+)-Source/Drain on a Selectively Etched GaN

Performance of GaN Metal--Oxide--Semiconductor Field-Effect Transistor with Regrown n+-Source/Drain on a Selectively Etched GaN

Charge trapping and interface characteristics in normally-off Al sub(2O) sub(3)/GaN-MOSFETs

Double-gate 1T-DRAM cell using nonvolatile memory function for improved performance

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