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Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget

Applied physics letters, 2017-12, Vol.111 (24)

2017

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Atomic Layer Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks

Materials, 2016-12, Vol.9 (12), p.1007

2016

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Top-down fabrication of high-uniformity nanodiamonds by self-assembled block copolymer masks

Scientific reports, 2019-05, Vol.9 (1), p.6914-6914, Article 6914

2019

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Impurity and silicate formation dependence on O3 pulse time and the growth temperature in atomic-layer-deposited La2O3 thin films

The Journal of chemical physics, 2017-02, Vol.146 (5), p.052821-052821

2017

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Comparative Study of Atomic-Layer-Deposited Stacked (HfO2/Al2O3) and Nanolaminated (HfAlO x ) Dielectrics on In0.53Ga0.47As

ACS applied materials & interfaces, 2013-05, Vol.5 (10), p.4195-4201

2013

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Tailoring the Interface Quality between HfO2 and GaAs via in Situ ZnO Passivation Using Atomic Layer Deposition

ACS applied materials & interfaces, 2014-07, Vol.6 (13), p.10482-10488

2014

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Robust SiNx/GaN MIS-HEMTs With Crystalline Interfacial Layer Using Hollow Cathode PEALD

IEEE electron device letters, 2018-08, Vol.39 (8), p.1195-1198

2018

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Low temperature (100 °C) atomic layer deposited-ZrO2 for recessed gate GaN HEMTs on Si

Applied physics letters, 2017-08, Vol.111 (8)

2017

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High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor

Journal of materials chemistry. C, Materials for optical and electronic devices, 2020-10, Vol.8 (37), p.1333-1339

2020

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Effects of H2 High-pressure Annealing on HfO2/Al2O3/In0.53Ga0.47As Capacitors: Chemical Composition and Electrical Characteristics

Scientific reports, 2017-08, Vol.7 (1), p.1-7, Article 9769

2017

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Formation of a ZnO/ZnS interface passivation layer on (NH4)2S treated In0.53Ga0.47As: Electrical and in-situ X-ray photoelectron spectroscopy characterization

Japanese Journal of Applied Physics, 2016-06, Vol.55 (8S2)

2016

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Theoretical and Experimental Investigation of Graphene/High- \kappa /p-Si Junctions

IEEE electron device letters, 2016-01, Vol.37 (1), p.4-7

2016

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High-voltage AlGaN/GaN Schottky barrier diodes on silicon using a post-process O2 treatment

Solid-state electronics, 2015-01, Vol.103, p.49-53

2015

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Improved interface characteristics of Mo/SiO2/4H-SiC metal-oxide-semiconductor with post-metallization annealing

Journal of the Korean Physical Society, 2018, 72(1), , pp.166-170

2018

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In-situ XPS study of ALD ZnO passivation of p-In0.53Ga0.47As

Electronic materials letters, 2015-09, Vol.11 (5), p.769-774

2015

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Electrical characteristics of HfO2 films on InP with different atomic-layer-deposition temperatures

Physica status solidi. A, Applications and materials science, 2013-07, Vol.210 (7), p.1381-1385

2013

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Hollow Cathode Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using Pentachlorodisilane

ACS applied materials & interfaces, 2018-04, Vol.10 (16), p.14116-14123

2018

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Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator

Journal of the Korean Physical Society, 2017, 71(4), , pp.185-190

2017

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Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper

ACS applied materials & interfaces, 2018-12, Vol.10 (51), p.44825-44833

2018

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Comparative study of trimethylaluminum and tetrakis(dimethylamido)titanium pretreatments on Pd/Al2O3/p-GaSb capacitors

Journal of physics. D, Applied physics, 2017-10, Vol.50 (41)

2017

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Interfacial and electrical properties of HfO 2 gate dielectrics grown on GaAs by atomic layer deposition using different oxidants

Journal of physics. D, Applied physics, 2012-10, Vol.45 (43), p.435305

2012

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Atomic-layer-deposited (HfO2)1−x(Al2O3)x nanolaminate films on InP with different Al2O3 contents

Journal of physics. D, Applied physics, 2013-07, Vol.46 (27)

2013

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Electrical properties of the HfO2–Al2O3 nanolaminates with homogeneous and graded compositions on InP

Current applied physics, 2016-03, Vol.16 (3), p.294-299

2016

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Impact of substrate temperature and film thickness on the interfacial evolution during atomic layer deposition of HfO2 on InP

Physica status solidi. PSS-RRL. Rapid research letters, 2012-05, Vol.6 (5), p.211-213

2012

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Impact of substrate temperature and film thickness on the interfacial evolution during atomic layer deposition of HfO 2 on InP

Physica status solidi. PSS-RRL. Rapid research letters, 2012-05, Vol.6 (5), p.211-213

2012

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Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget

Atomic Layer Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks

Top-down fabrication of high-uniformity nanodiamonds by self-assembled block copolymer masks

Impurity and silicate formation dependence on O3 pulse time and the growth temperature in atomic-layer-deposited La2O3 thin films

Comparative Study of Atomic-Layer-Deposited Stacked (HfO2/Al2O3) and Nanolaminated (HfAlO x ) Dielectrics on In0.53Ga0.47As

Tailoring the Interface Quality between HfO2 and GaAs via in Situ ZnO Passivation Using Atomic Layer Deposition

Robust SiNx/GaN MIS-HEMTs With Crystalline Interfacial Layer Using Hollow Cathode PEALD

Low temperature (100 °C) atomic layer deposited-ZrO2 for recessed gate GaN HEMTs on Si

High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor

Effects of H2 High-pressure Annealing on HfO2/Al2O3/In0.53Ga0.47As Capacitors: Chemical Composition and Electrical Characteristics

Formation of a ZnO/ZnS interface passivation layer on (NH4)2S treated In0.53Ga0.47As: Electrical and in-situ X-ray photoelectron spectroscopy characterization

Theoretical and Experimental Investigation of Graphene/High- \kappa /p-Si Junctions

High-voltage AlGaN/GaN Schottky barrier diodes on silicon using a post-process O2 treatment

Improved interface characteristics of Mo/SiO2/4H-SiC metal-oxide-semiconductor with post-metallization annealing

In-situ XPS study of ALD ZnO passivation of p-In0.53Ga0.47As

Electrical characteristics of HfO2 films on InP with different atomic-layer-deposition temperatures

Hollow Cathode Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using Pentachlorodisilane

Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator

Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper

Comparative study of trimethylaluminum and tetrakis(dimethylamido)titanium pretreatments on Pd/Al2O3/p-GaSb capacitors

Interfacial and electrical properties of HfO 2 gate dielectrics grown on GaAs by atomic layer deposition using different oxidants

Atomic-layer-deposited (HfO2)1−x(Al2O3)x nanolaminate films on InP with different Al2O3 contents

Electrical properties of the HfO2–Al2O3 nanolaminates with homogeneous and graded compositions on InP

Impact of substrate temperature and film thickness on the interfacial evolution during atomic layer deposition of HfO2 on InP

Impact of substrate temperature and film thickness on the interfacial evolution during atomic layer deposition of HfO 2 on InP

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