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Photocurrent in ZnO nanowires grown from Au electrodes

Applied physics letters, 2004-05, Vol.84 (22), p.4376-4378

2004

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Post-annealing processes to improve inhomogeneity of Schottky barrier height in Ti/Al 4H-SiC Schottky barrier diode

Microelectronic engineering, 2016-03, Vol.154, p.69-73

2016

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Unbalanced Layout Method for the 4H-SiC JBS Diode Offering Improved Tradeoff between Leakage Current and ON-Resistance

IEEE electron device letters, 2016-08, Vol.37 (8), p.1045-1047

2016

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Optoelectronic characteristics of CdTe/HgTe/CdTe quantum-dot quantum-well nanoparticles

Solid state communications, 2006-11, Vol.140 (5), p.215-218

2006

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Design of Current-Type Readout Integrated Circuit for 160 × 120 Pixel Array Applications

Journal of Electrical Engineering & Technology, 2012, 7(2), , pp.221-224

2012

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Structural and Optical Properties of ZnO Nanowires Synthesized from Ball-Milled ZnO Powders

Japanese Journal of Applied Physics, 2002, Vol.41 (Part 1, No. 12), p.7317-7321

2002

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An Analog Front-End IC Design for 320 \times 240 Microbolometer Array Applications

IEEE transactions on circuits and systems. II, Express briefs, 2015-11, Vol.62 (11), p.1048-1052

2015

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Al2O3 Nanotubes Fabricated by Wet Etching of ZnO/Al2O3 Core/Shell Nanofibers

Advanced materials (Weinheim), 2004-03, Vol.16 (5), p.422-425

2004

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A Study on the Design and Electrical Characteristics Enhancement of the Floating Island IGBT with Low On-Resistance

Journal of Electrical Engineering & Technology, 2012, 7(4), , pp.601-606

2012

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Investigation of the layout and optical proximity correction effects to control the trench etching process on 4H-SiC

Electronic Materials Letters, 2017, 13(4), , pp.368-372

2017

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Photocurrent and Photoluminescence Characteristics of Networked GaN Nanowires

Japanese Journal of Applied Physics, 2004-10, Vol.43 (10), p.6868-6872

2004

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The Analysis of Oxygen Plasma Pretreatment for Improving Anodic Bonding

Journal of the Electrochemical Society, 2002, Vol.149 (1), p.G8

2002

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High Security FeRAM-Based EPC C1G2 UHF (860 MHz-960 MHz) Passive RFID Tag Chip

ETRI Journal, 2008, 30(6), , pp.826-832

2008

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A Novel Trench IGBT With a Deep P+ Layer Beneath the Trench Emitter

IEEE electron device letters, 2009, Vol.30 (1), p.82-84

2009

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Publisher's Note: "A Small-Sized Lateral Trench Electrode Insulated Gate Bipolar Transistor for Improving Latch-up and Breakdown Characteristics"

Japanese Journal of Applied Physics, 2012-07, Vol.51 (7), p.079202-079202-1

2012

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Publisher's Note: “A Small-Sized Lateral Trench Electrode Insulated Gate Bipolar Transistor for Improving Latch-up and Breakdown Characteristics”

Japanese Journal of Applied Physics, 2012-07, Vol.51 (7R), p.79202

2012

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Design and verification of an all-digital on-chip process variation sensor

2013 IEEE International Symposium on Circuits and Systems (ISCAS), 2013, p.1684-1687

2013

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Publisher's Note: "The Characteristics of Kink Effect Suppressed Thin Film Transistor by Using Symmetric Dual-Gate"

Japanese Journal of Applied Physics, 2012-07, Vol.51 (7), p.079205-079205-1

2012

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Enhancement of On-Resistance Characteristics Using Charge Balance Analysis Modulation in a Trench Filling Super Junction MOSFET

Journal of Electrical Engineering & Technology, 2014, 9(3), , pp.843-847

2014

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Publisher's Note: “The Characteristics of Kink Effect Suppressed Thin Film Transistor by Using Symmetric Dual-Gate”

Japanese Journal of Applied Physics, 2012-07, Vol.51 (7R), p.79205

2012

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A Novel Trench IGBT With a Deep \hbox+ Layer Beneath the Trench Emitter

IEEE electron device letters, 2009-01, Vol.30 (1), p.82-84

2009

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Analysis of Lattice Temperature in Super Junction Trench Gate Power MOSFET as Changing Degree of Trench Etching

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2014, 14(3), 57, pp.263-267

2014

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Influences of partial melting and overheating on amorphization of Ge2Sb2Te5 during the reset process

Physica status solidi. A, Applications and materials science, 2008-11, Vol.205 (11), p.2657-2661

2008

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New Design Rule for High Voltage Field Ring Structure

Journal of nanoscience and nanotechnology, 2016-12, Vol.16 (12), p.12897-12899

2016

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Enhanced brightness and efficiency of organic light-emitting diodes with an LiF in the Alq3

IEEE electron device letters, 2006-07, Vol.27 (7), p.558-560

2006

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Photocurrent in ZnO nanowires grown from Au electrodes

Post-annealing processes to improve inhomogeneity of Schottky barrier height in Ti/Al 4H-SiC Schottky barrier diode

Unbalanced Layout Method for the 4H-SiC JBS Diode Offering Improved Tradeoff between Leakage Current and ON-Resistance

Optoelectronic characteristics of CdTe/HgTe/CdTe quantum-dot quantum-well nanoparticles

Design of Current-Type Readout Integrated Circuit for 160 × 120 Pixel Array Applications

Structural and Optical Properties of ZnO Nanowires Synthesized from Ball-Milled ZnO Powders

An Analog Front-End IC Design for 320 \times 240 Microbolometer Array Applications

Al2O3 Nanotubes Fabricated by Wet Etching of ZnO/Al2O3 Core/Shell Nanofibers

A Study on the Design and Electrical Characteristics Enhancement of the Floating Island IGBT with Low On-Resistance

Investigation of the layout and optical proximity correction effects to control the trench etching process on 4H-SiC

Photocurrent and Photoluminescence Characteristics of Networked GaN Nanowires

The Analysis of Oxygen Plasma Pretreatment for Improving Anodic Bonding

High Security FeRAM-Based EPC C1G2 UHF (860 MHz-960 MHz) Passive RFID Tag Chip

A Novel Trench IGBT With a Deep P+ Layer Beneath the Trench Emitter

Publisher's Note: "A Small-Sized Lateral Trench Electrode Insulated Gate Bipolar Transistor for Improving Latch-up and Breakdown Characteristics"

Publisher's Note: “A Small-Sized Lateral Trench Electrode Insulated Gate Bipolar Transistor for Improving Latch-up and Breakdown Characteristics”

Design and verification of an all-digital on-chip process variation sensor

Publisher's Note: "The Characteristics of Kink Effect Suppressed Thin Film Transistor by Using Symmetric Dual-Gate"

Enhancement of On-Resistance Characteristics Using Charge Balance Analysis Modulation in a Trench Filling Super Junction MOSFET

Publisher's Note: “The Characteristics of Kink Effect Suppressed Thin Film Transistor by Using Symmetric Dual-Gate”

A Novel Trench IGBT With a Deep \hbox+ Layer Beneath the Trench Emitter

Analysis of Lattice Temperature in Super Junction Trench Gate Power MOSFET as Changing Degree of Trench Etching

Influences of partial melting and overheating on amorphization of Ge2Sb2Te5 during the reset process

New Design Rule for High Voltage Field Ring Structure

Enhanced brightness and efficiency of organic light-emitting diodes with an LiF in the Alq3

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