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Curvature and bow of bulk GaN substrates

Journal of applied physics, 2016-07, Vol.120 (3)

2016

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Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes

Optics express, 2019-03, Vol.27 (6), p.8327-8334

2019

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Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells

Optics express, 2017-02, Vol.25 (4), p.3841-3849

2017

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Analysis of Vegard’s law for lattice matching InxAl1−xN to GaN by metalorganic chemical vapor deposition

Journal of crystal growth, 2017-10, Vol.475, p.127-135

2017

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Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers

Applied physics letters, 2012-09, Vol.101 (12)

2012

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Quasi-equilibrium crystal shapes and kinetic Wulff plots for gallium nitride grown by hydride vapor phase epitaxy

Journal of crystal growth, 2013-04, Vol.369, p.14-20

2013

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Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (202¯1) AlGaN/GaN buffer layers

Journal of crystal growth, 2015-09, Vol.425, p.389-392

2015

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Lattice Tilt and Misfit Dislocations in (11\bar22) Semipolar GaN Heteroepitaxy

Applied physics express, 2010-01, Vol.3 (1), p.11004

2010

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Blue and aquamarine stress-relaxed semipolar (112¯2) laser diodes

Applied physics letters, 2013-10, Vol.103 (16)

2013

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Determination of Composition and Lattice Relaxation in Semipolar Ternary (In,Al,Ga)N Strained Layers from Symmetric X-ray Diffraction Measurements

Applied physics express, 2011-06, Vol.4 (6), p.61001

2011

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Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs

Journal of applied physics, 2019-11, Vol.126 (18)

2019

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A mutagenic screen reveals NspS residues important for regulation of Vibrio cholerae biofilm formation

Microbiology (Society for General Microbiology), 2021-03, Vol.167 (3)

2021

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Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy

Applied physics letters, 2020-03, Vol.116 (9)

2020

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Critical Thickness for Onset of Plastic Relaxation in (11\bar22) and (20\bar21) Semipolar AlGaN Heterostructures

Applied physics express, 2010-11, Vol.3 (11), p.111002

2010

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Hybrid tunnel junction contacts to III–nitride light-emitting diodes

Applied physics express, 2016-02, Vol.9 (2), p.22102

2016

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Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact

Optics express, 2016-04, Vol.24 (7), p.7816-7822

2016

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Total synthesis and antibacterial evaluation of Empetroxepins A and B and related analogs

Bioorganic & medicinal chemistry letters, 2022-11, Vol.75, p.128955-128955, Article 128955

2022

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High germanium doping of GaN films by ammonia molecular beam epitaxy

Journal of crystal growth, 2019-02, Vol.508, p.19-23

2019

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III-nitride blue light-emitting diodes utilizing hybrid tunnel junction with low excess voltage

Semiconductor science and technology, 2020-12, Vol.35 (12), p.125026

2020

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Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

Applied physics letters, 2015-06, Vol.106 (22)

2015

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Basal Plane Stacking Fault Suppression by Nitrogen Carrier Gas in m -plane GaN Regrowth by Hydride Vapor Phase Epitaxy

Applied physics express, 2013-11, Vol.6 (11), p.115502

2013

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Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy

Journal of applied physics, 2011-05, Vol.109 (10), p.103522-103522-12

2011

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Structural and optical properties of nonpolar m- and a-plane GaN/AlGaN heterostructures for narrow-linewidth mid-infrared intersubband transitions

Applied physics letters, 2020-05, Vol.116 (20)

2020

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Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2012-07, Vol.30 (4)

2012

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Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy

Applied physics letters, 2012-06, Vol.100 (23), p.232102-232102-4

2012

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Curvature and bow of bulk GaN substrates

Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes

Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells

Analysis of Vegard’s law for lattice matching InxAl1−xN to GaN by metalorganic chemical vapor deposition

Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers

Quasi-equilibrium crystal shapes and kinetic Wulff plots for gallium nitride grown by hydride vapor phase epitaxy

Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (202¯1) AlGaN/GaN buffer layers

Lattice Tilt and Misfit Dislocations in (11\bar22) Semipolar GaN Heteroepitaxy

Blue and aquamarine stress-relaxed semipolar (112¯2) laser diodes

Determination of Composition and Lattice Relaxation in Semipolar Ternary (In,Al,Ga)N Strained Layers from Symmetric X-ray Diffraction Measurements

Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs

A mutagenic screen reveals NspS residues important for regulation of Vibrio cholerae biofilm formation

Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy

Critical Thickness for Onset of Plastic Relaxation in (11\bar22) and (20\bar21) Semipolar AlGaN Heterostructures

Hybrid tunnel junction contacts to III–nitride light-emitting diodes

Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact

Total synthesis and antibacterial evaluation of Empetroxepins A and B and related analogs

High germanium doping of GaN films by ammonia molecular beam epitaxy

III-nitride blue light-emitting diodes utilizing hybrid tunnel junction with low excess voltage

Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

Basal Plane Stacking Fault Suppression by Nitrogen Carrier Gas in m -plane GaN Regrowth by Hydride Vapor Phase Epitaxy

Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy

Structural and optical properties of nonpolar m- and a-plane GaN/AlGaN heterostructures for narrow-linewidth mid-infrared intersubband transitions

Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy

Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy

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