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Low-Temperature, Solution-Processed, Transparent Zinc Oxide-Based Thin-Film Transistors for Sensing Various Solvents

Materials, 2017-02, Vol.10 (3), p.234

2017

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Exploring the Influence of Copper Chemical Displacement Duration on Nonvolatile Oxide-based Resistive Memory Device Characteristics

Sensors and materials, 2024-01, Vol.36 (3), p.1093

2024

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Indium Doping Concentration Effects in the Fabrication of Zinc-Oxide Thin-Film Transistors

International journal of electrochemical science, 2013-07, Vol.8 (7), p.9773-9784

You, Hsin-Chiang

2013

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Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure

Materials, 2019-11, Vol.12 (21), p.3639

2019

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Effect of oxygen plasma on the surface states of ZnO films used to produce thin-film transistors on soft plastic sheets

Journal of materials chemistry. C, Materials for optical and electronic devices, 2013-01, Vol.1 (40), p.6613-6622

2013

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Effective enhancement of hydrophilicity of solution indium zinc oxide-based thin-film transistors by oxygen plasma treatment of deposition layer surface

Japanese Journal of Applied Physics, 2016-06, Vol.55 (6), p.66501

2016

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Improving the leakage current of polyimide-based resistive memory by tuning the molecular chain stack of the polyimide film

Japanese Journal of Applied Physics, 2018-02, Vol.57 (2S2), p.2

2018

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Improving the operational characteristic stability in Al/Au/ZnO/Al resistive random access memory devices

Japanese Journal of Applied Physics, 2016-04, Vol.55 (4), p.44101

2016

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Ultraviolet Photodetecting and Plasmon-to-Electric Conversion of Controlled Inkjet-Printing Thin-Film Transistors

Nanomaterials (Basel, Switzerland), 2020-03, Vol.10 (3), p.458

2020

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Solution-processed ZnO thin films for low voltage and low temperature application in flexible resistive random access memory

Thin solid films, 2016-10, Vol.616, p.728-732

2016

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Silicon Heterojunction Solar Cells Using AlOx and Plasma-Immersion Ion Implantation

Energies (Basel), 2014-06, Vol.7 (6), p.3653-3663

2014

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Resistive switching mechanism of ZnO/ZrO2-stacked resistive random access memory device annealed at 300 °C by sol-gel method with forming-free operation

Japanese Journal of Applied Physics, 2018-01, Vol.57 (1)

2018

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The highly electrical performances of flexible indium-zinc-oxide based thin-film transistors on stability improvement by passivation layer

Microelectronic engineering, 2017-06, Vol.177, p.87-92

2017

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Sol-gel-derived double-layered nanocrystal memory

Applied physics letters, 2006-12, Vol.89 (25), p.252111-252111-3

2006

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Physical Characterization and Electrical Properties of Sol-Gel-Derived Zirconia Films

Journal of the Electrochemical Society, 2006, Vol.153 (6), p.F94

2006

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Hafnium silicate nanocrystal memory using sol-gel-spin-coating method

IEEE electron device letters, 2006-08, Vol.27 (8), p.644-646

2006

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Effects of Doped Stannum in the Fabrication of Zinc-Oxide Thin-Film Transistors

International journal of electrochemical science, 2016-05, p.3383-3392

You, Hsin-Chiang

2016

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Investigation of the Sol-Gel Method on the Flexible ZnO Device

International journal of electrochemical science, 2012-10, Vol.7 (10), p.9085-9094

2012

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Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

Materials, 2018-02, Vol.11 (2), p.265

2018

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Effects of Chemical Displacing Time for the Characteristics of the Nonvolatile Oxide-based Resistive Memory Devices

2023 Sixth International Symposium on Computer, Consumer and Control (IS3C), 2023, p.230-233

2023

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Facile preparation of sol–gel-derived ultrathin and high-dielectric zirconia films for capacitor devices

Applied surface science, 2012-10, Vol.258 (24), p.10084-10088

2012

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Two-bit/four-level Pr2O3 trapping layer for silicon-oxide-nitride-oxide-silicon-type flash memory

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2012-01, Vol.30 (1)

2012

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Automatic Recognition of Driving Events based on Deep Learning

2023 Sixth International Symposium on Computer, Consumer and Control (IS3C), 2023, p.52-55

2023

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Oxygen Plasma Functioning of Charge Carrier Density in Zinc Oxide Thin-Film Transistors

Applied physics express, 2013-07, Vol.6 (7), p.76501

2013

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Polystyrene-block-poly(methylmethacrylate) composite material film as a gate dielectric for plastic thin-film transistor applications

RSC advances, 2014-01, Vol.4 (36), p.18493-18502

2014

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Low-Temperature, Solution-Processed, Transparent Zinc Oxide-Based Thin-Film Transistors for Sensing Various Solvents

Exploring the Influence of Copper Chemical Displacement Duration on Nonvolatile Oxide-based Resistive Memory Device Characteristics

Indium Doping Concentration Effects in the Fabrication of Zinc-Oxide Thin-Film Transistors

Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure

Effect of oxygen plasma on the surface states of ZnO films used to produce thin-film transistors on soft plastic sheets

Effective enhancement of hydrophilicity of solution indium zinc oxide-based thin-film transistors by oxygen plasma treatment of deposition layer surface

Improving the leakage current of polyimide-based resistive memory by tuning the molecular chain stack of the polyimide film

Improving the operational characteristic stability in Al/Au/ZnO/Al resistive random access memory devices

Ultraviolet Photodetecting and Plasmon-to-Electric Conversion of Controlled Inkjet-Printing Thin-Film Transistors

Solution-processed ZnO thin films for low voltage and low temperature application in flexible resistive random access memory

Silicon Heterojunction Solar Cells Using AlOx and Plasma-Immersion Ion Implantation

Resistive switching mechanism of ZnO/ZrO2-stacked resistive random access memory device annealed at 300 °C by sol-gel method with forming-free operation

The highly electrical performances of flexible indium-zinc-oxide based thin-film transistors on stability improvement by passivation layer

Sol-gel-derived double-layered nanocrystal memory

Physical Characterization and Electrical Properties of Sol-Gel-Derived Zirconia Films

Hafnium silicate nanocrystal memory using sol-gel-spin-coating method

Effects of Doped Stannum in the Fabrication of Zinc-Oxide Thin-Film Transistors

Investigation of the Sol-Gel Method on the Flexible ZnO Device

Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

Effects of Chemical Displacing Time for the Characteristics of the Nonvolatile Oxide-based Resistive Memory Devices

Facile preparation of sol–gel-derived ultrathin and high-dielectric zirconia films for capacitor devices

Two-bit/four-level Pr2O3 trapping layer for silicon-oxide-nitride-oxide-silicon-type flash memory

Automatic Recognition of Driving Events based on Deep Learning

Oxygen Plasma Functioning of Charge Carrier Density in Zinc Oxide Thin-Film Transistors

Polystyrene-block-poly(methylmethacrylate) composite material film as a gate dielectric for plastic thin-film transistor applications

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