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A comparative study on inductively-coupled plasma high-density plasma, plasma-enhanced, and low pressure chemical vapor deposition silicon nitride films

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2000-03, Vol.18 (2), p.372-376

2000

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Variable Frequency Microwave and Convection Furnace Curing of Polybenzoxazole Buffer Layer for GaAs HBT Technology

IEEE transactions on semiconductor manufacturing, 2007-08, Vol.20 (3), p.323-332

2007

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Temperature accelerated dielectric breakdown of PECVD low-k carbon doped silicon dioxide dielectric thin films

Applied physics. A, Materials science & processing, 2005-09, Vol.81 (4), p.767-771

2005

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Positive and Negative Oxygen Vacancies in Amorphous Silica

ECS transactions, 2009, Vol.19 (2), p.3-17

2009

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Comparison of Interlevel Dielectric Processes Using PECVD Silicon Nitride, Polyimide, and Polybenzoxazole for GaAs HBT Technology

ECS transactions, 2009, Vol.19 (2), p.495-509

Yota, Jiro

2009

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Control of Properties of GeO2 Films and Ge/GeO2 Interfaces by the Suppression of GeO Volatilization

ECS transactions, 2009, Vol.19 (2), p.101-116

2009

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Interfacial Control and Electrical Properties of Ge MOS structures

ECS transactions, 2009, Vol.19 (2), p.67-85

2009

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Structural Metastability and Size Scalability of Phase-Controlled HfO2 Formed through Cap-PDA

ECS transactions, 2009-05, Vol.19 (2), p.563-575

2009

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Low-temperature-atomic-layer-deposition of SiO2 with Tris(dimethylamino)Silane (TDMAS) and Ozone using Temperature Controlled Water Vapor Treatment

ECS transactions, 2009, Vol.19 (2), p.417-426

2009

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High K Dielectrics for Future CMOS Devices

ECS transactions, 2009, Vol.19 (2), p.579-591

Robertson, John

2009

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Chemical and electrochemical treatments of GaAs with Na2S and (NH4)2S solutions: A surface chemical study

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1993-07, Vol.11 (4), p.1083-1088

1993

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New Insights of BTI Degradation in MOSFETs with SiON Gate Dielectrics

ECS transactions, 2009, Vol.19 (2), p.301-318

2009

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The Role of the Interfaces in the 1/f Noise of MOSFETs with High-k Gate Stacks

ECS transactions, 2009, Vol.19 (2), p.87-99

2009

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Critical Modeling Issues in Negative Bias Temperature Instability

ECS transactions, 2009, Vol.19 (2), p.265-287

2009

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2-D Roughening of SiO2 Thermally Grown on Atomically Flat Si Surface

ECS transactions, 2009, Vol.19 (2), p.427-442

2009

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UV-Raman Spectroscopy Study on SiO2/Si Interface

ECS transactions, 2009, Vol.19 (2), p.55-66

2009

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Cubic Structured HfLaO Dielectrics for MIM Capacitor for RF IC Applications

ECS transactions, 2009, Vol.19 (2), p.615-623

2009

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Multiprincipal-Element AlCrTaTiZr-Nitride Nanocomposite Film of Extremely High Thermal Stability as Diffusion Barrier for Cu Metallization

ECS transactions, 2009, Vol.19 (2), p.751-762

2009

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Impact of Deuterium and Fluorine Incorporation on Weibull Distribution of Dielectric Breakdown in Gate Dielectrics

ECS transactions, 2009, Vol.19 (2), p.227-242

2009

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Moisture Effects on the 1/F Noise Of Mos Devices

ECS transactions, 2009, Vol.19 (2), p.363-377

2009

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The Effects of Oxidants on the Growth Behavior of PbTiO3 Thin Film by Atomic Layer Deposition

ECS transactions, 2009, Vol.19 (2), p.829-841

2009

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The Perovskite SrTiO3 on Si/SiO2 by Liquid Injection MOCVD

ECS transactions, 2009, Vol.19 (2), p.669-684

2009

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Pulsed-Chemical Vapor Deposition of Ruthenium and Ruthenium Dioxide Thin Films using RuO4 Precursor for the DRAM Capacitor Electrode

ECS transactions, 2009, Vol.19 (2), p.717-728

2009

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Material Dependence of Negative Bias Temperature Instability (NBTI) Stress and Recovery in SiON p-MOSFETs

ECS transactions, 2009, Vol.19 (2), p.243-263

2009

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Design of High-k Interfacial Layer Formation by Cycle-by-Cycle Deposition and Annealing Method

ECS transactions, 2009, Vol.19 (2), p.129-143

2009

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A comparative study on inductively-coupled plasma high-density plasma, plasma-enhanced, and low pressure chemical vapor deposition silicon nitride films

Variable Frequency Microwave and Convection Furnace Curing of Polybenzoxazole Buffer Layer for GaAs HBT Technology

Temperature accelerated dielectric breakdown of PECVD low-k carbon doped silicon dioxide dielectric thin films

Positive and Negative Oxygen Vacancies in Amorphous Silica

Comparison of Interlevel Dielectric Processes Using PECVD Silicon Nitride, Polyimide, and Polybenzoxazole for GaAs HBT Technology

Control of Properties of GeO2 Films and Ge/GeO2 Interfaces by the Suppression of GeO Volatilization

Interfacial Control and Electrical Properties of Ge MOS structures

Structural Metastability and Size Scalability of Phase-Controlled HfO2 Formed through Cap-PDA

Low-temperature-atomic-layer-deposition of SiO2 with Tris(dimethylamino)Silane (TDMAS) and Ozone using Temperature Controlled Water Vapor Treatment

High K Dielectrics for Future CMOS Devices

Chemical and electrochemical treatments of GaAs with Na2S and (NH4)2S solutions: A surface chemical study

New Insights of BTI Degradation in MOSFETs with SiON Gate Dielectrics

The Role of the Interfaces in the 1/f Noise of MOSFETs with High-k Gate Stacks

Critical Modeling Issues in Negative Bias Temperature Instability

2-D Roughening of SiO2 Thermally Grown on Atomically Flat Si Surface

UV-Raman Spectroscopy Study on SiO2/Si Interface

Cubic Structured HfLaO Dielectrics for MIM Capacitor for RF IC Applications

Multiprincipal-Element AlCrTaTiZr-Nitride Nanocomposite Film of Extremely High Thermal Stability as Diffusion Barrier for Cu Metallization

Impact of Deuterium and Fluorine Incorporation on Weibull Distribution of Dielectric Breakdown in Gate Dielectrics

Moisture Effects on the 1/F Noise Of Mos Devices

The Effects of Oxidants on the Growth Behavior of PbTiO3 Thin Film by Atomic Layer Deposition

The Perovskite SrTiO3 on Si/SiO2 by Liquid Injection MOCVD

Pulsed-Chemical Vapor Deposition of Ruthenium and Ruthenium Dioxide Thin Films using RuO4 Precursor for the DRAM Capacitor Electrode

Material Dependence of Negative Bias Temperature Instability (NBTI) Stress and Recovery in SiON p-MOSFETs

Design of High-k Interfacial Layer Formation by Cycle-by-Cycle Deposition and Annealing Method

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