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A Case Study of Jeonju Tourism Course Development Using Gamification

Journal of Digital Contents Society, 2024-08, Vol.25 (8), p.2185-2192

Yoon, Hyung Sup

2024

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Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment

Thin solid films, 2013-11, Vol.547, p.106-110

2013

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A Case Study on the Development of a Serious Game “Happy Class” for Preventing Cyber Bullying

Journal of Korea Game Society, 2020-04, Vol.20 (2), p.45-59

Yoon, Hyung-Sup

2020

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Influence of device dimension and gate recess on the characteristics of AlGaN/GaN high electron mobility transistors

Microwave and optical technology letters, 2012-09, Vol.54 (9), p.2103-2106

2012

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Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process

ETRI journal, 2023-02, Vol.45 (1), p.171-179

2023

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Microwave Low-Noise Performance of 0.17~\mu \text Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate

IEEE electron device letters, 2016-11, Vol.37 (11), p.1407-1410

2016

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The effects of tetramethylammonium hydroxide treatment on the performance of recessed-gate AlGaN/GaN high electron mobility transistors

Thin solid films, 2017-04, Vol.628, p.31-35

2017

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A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices

Journal of the Korean Physical Society, 2020, 77(2), , pp.122-126

2020

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W‐Band MMIC chipset in 0.1‐μm mHEMT technology

ETRI Journal, 2020, 42(4), , pp.549-561

2020

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Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure

Applied sciences, 2018-06, Vol.8 (6), p.974

2018

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Device characteristics of AlGaAs/InGaAs HEMTs fabricated by inductively coupled plasma etching

Thin solid films, 2003-07, Vol.435 (1), p.139-144

2003

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A Study on the History and Development of Serious Games for Education in Korea

Journal of Korea Game Society, 2020-08, Vol.20 (4), p.101-110

Yoon, Hyung-Sup

2020

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A 77 GHz mHEMT MMIC Chip Set for Automotive Radar Systems

ETRI journal, 2005-04, Vol.27 (2), p.133-139

2005

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Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process

ETRI journal, 2023-02, Vol.45 (1), p.171-179

2023

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A transceiver module for automotive radar sensors using W-band monolithic microwave-integrated circuit one-chip set

Microwave and optical technology letters, 2008-09, Vol.50 (9), p.2371-2376

2008

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Pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mobility Transistors with Super Low Noise Performances of 0.41 dB at 18 GHz

ETRI journal, 1996-10, Vol.18 (3), p.171-179

1996

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A Comparative Analysis on The Age and Gender of Player Character : Focusing on The USA and Japanese Video Games

Journal of Korea Game Society, 2017-08, Vol.17 (4), p.91-100

2017

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A Study on The Characteristics of Game Theme : Focusing RPGs in USA and Japan

Journal of Korea Game Society, 2017-03, Vol.17 (1), p.41-49

2017

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A Study on The Voice Chatting System of MMORPGs in China

Journal of Korea Game Society, 2017-03, Vol.17 (1), p.99-107

2017

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DC and RF Characteristics of 0.15 pm Power Metamorphic HEMTs

ETRI journal, 2005-12, Vol.27 (6), p.685-690

2005

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80-110 GHz MMIC amplifiers using a 0.1-μm GaAs-based mHEMT technology

Microwave and optical technology letters, 2012-08, Vol.54 (8), p.1978-1982

2012

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W-Band MMIC chipset in 0.1-μm mHEMT technology

ETRI journal, 2020-08, Vol.42 (4), p.549-561

2020

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Noise Performance of Pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mobility Transistors with Wide Head T-Shaped Gate Recessed by Electron Cyclotron Resonance Plasma Etching

Japanese Journal of Applied Physics, 1999-02, Vol.38 (2R), p.654

1999

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Extremely Low Noise Characteristics of 0.15 µm Power Metamorphic High-Electron-Mobility Transistors

Japanese Journal of Applied Physics, 2006-04, Vol.45 (4S), p.3380

2006

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A Study on the Game Analysis Methods : Focusing on the Analysis of Game Components

Journal of Korea Game Society, 2015-10, Vol.15 (5), p.19-28

2015

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A Case Study of Jeonju Tourism Course Development Using Gamification

Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment

A Case Study on the Development of a Serious Game “Happy Class” for Preventing Cyber Bullying

Influence of device dimension and gate recess on the characteristics of AlGaN/GaN high electron mobility transistors

Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process

Microwave Low-Noise Performance of 0.17~\mu \text Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate

The effects of tetramethylammonium hydroxide treatment on the performance of recessed-gate AlGaN/GaN high electron mobility transistors

A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices

W‐Band MMIC chipset in 0.1‐μm mHEMT technology

Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure

Device characteristics of AlGaAs/InGaAs HEMTs fabricated by inductively coupled plasma etching

A Study on the History and Development of Serious Games for Education in Korea

A 77 GHz mHEMT MMIC Chip Set for Automotive Radar Systems

Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process

A transceiver module for automotive radar sensors using W-band monolithic microwave-integrated circuit one-chip set

Pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mobility Transistors with Super Low Noise Performances of 0.41 dB at 18 GHz

A Comparative Analysis on The Age and Gender of Player Character : Focusing on The USA and Japanese Video Games

A Study on The Characteristics of Game Theme : Focusing RPGs in USA and Japan

A Study on The Voice Chatting System of MMORPGs in China

DC and RF Characteristics of 0.15 pm Power Metamorphic HEMTs

80-110 GHz MMIC amplifiers using a 0.1-μm GaAs-based mHEMT technology

W-Band MMIC chipset in 0.1-μm mHEMT technology

Noise Performance of Pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mobility Transistors with Wide Head T-Shaped Gate Recessed by Electron Cyclotron Resonance Plasma Etching

Extremely Low Noise Characteristics of 0.15 µm Power Metamorphic High-Electron-Mobility Transistors

A Study on the Game Analysis Methods : Focusing on the Analysis of Game Components

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