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An accurate locally active memristor model for S-type negative differential resistance in NbOx

Applied physics letters, 2016-01, Vol.108 (2)

2016

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Transient electrophoretic current in a nonpolar solvent

Journal of applied physics, 2011-03, Vol.109 (6), p.064509-064509-7

2011

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Short-Term Relaxation in HfOx/CeOx Resistive Random Access Memory With Selector

IEEE electron device letters, 2017-07, Vol.38 (7), p.871-874

2017

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Optimizing Write Fidelity of MRAMs by Alternating Water-Filling Algorithm

IEEE transactions on communications, 2022-09, Vol.70 (9), p.5825-5836

2022

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NbO2-based low power and cost effective 1S1R switching for high density cross point ReRAM Application

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014, p.1-2

2014

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Effect of annealing on structural changes and oxygen diffusion in amorphous HfO2 using classical molecular dynamics

Journal of applied physics, 2018-02, Vol.123 (8)

2018

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Influence of Surfactant Structure on Reverse Micelle Size and Charge for Nonpolar Electrophoretic Inks

Langmuir, 2011-10, Vol.27 (19), p.11845-11851

2011

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Short-Term Relaxation in HfO x /CeO x Resistive Random Access Memory With Selector

IEEE electron device letters, 2017-07, Vol.38 (7), p.871-874

2017

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Thermally induced crystallization in NbO2 thin films

Scientific reports, 2016-09, Vol.6 (1), p.34294-34294, Article 34294

2016

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An accurate locally active memristor model for S-type negative differential resistance in NbO{sub x}

Applied physics letters, 2016-01, Vol.108 (2)

2016

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Thermally induced crystallization in NbO 2 thin films

Scientific reports, 2016-09, Vol.6, p.34294

2016

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Transient-current characteristics of dispersed charges in a non-polar medium

Journal of the Society for Information Display, 2011-09, Vol.19 (9), p.614-619

2011

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Fast full-color reflective display via photoluminescent enhancement

Journal of the Society for Information Display, 2012-10, Vol.20 (10), p.552-558

2012

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Optimizing the Write Fidelity of MRAMs

2020 IEEE International Symposium on Information Theory (ISIT), 2020, p.792-797

2020

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Improvement of characteristics of NbO2 selector and full integration of 4F2 2x-nm tech 1S1R ReRAM

2015 IEEE International Electron Devices Meeting (IEDM), 2015, p.10.3.1-10.3.4

2015

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300 nm Pitch W2W HBI for CFET and 3D DRAM Through Module Co-optimization

2024 IEEE 74th Electronic Components and Technology Conference (ECTC), 2024, p.1968-1972

2024

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Improving memristor memory with sneak current sharing

2015 33rd IEEE International Conference on Computer Design (ICCD), 2015, p.549-556

2015

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Novel Low Thermal Budget Bonding Using Single Wafer Thermal Processing System, Resulting in Excellent Wafer-to-Wafer Hybrid Bonding at sub-0.5um Pitch

2024 IEEE 74th Electronic Components and Technology Conference (ECTC), 2024, p.404-407

2024

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Low Power Reflective Display with Print-Like Color via Novel Electronic Inks

MRS proceedings, 2011, Vol.1359 (1), Article mrss11-1359-nn01-01

2011

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An accurate locally active memristor model for S-type negative differential resistance in NbOx

Transient electrophoretic current in a nonpolar solvent

Short-Term Relaxation in HfOx/CeOx Resistive Random Access Memory With Selector

Optimizing Write Fidelity of MRAMs by Alternating Water-Filling Algorithm

NbO2-based low power and cost effective 1S1R switching for high density cross point ReRAM Application

Effect of annealing on structural changes and oxygen diffusion in amorphous HfO2 using classical molecular dynamics

Influence of Surfactant Structure on Reverse Micelle Size and Charge for Nonpolar Electrophoretic Inks

Short-Term Relaxation in HfO x /CeO x Resistive Random Access Memory With Selector

Thermally induced crystallization in NbO2 thin films

An accurate locally active memristor model for S-type negative differential resistance in NbO{sub x}

Thermally induced crystallization in NbO 2 thin films

Transient-current characteristics of dispersed charges in a non-polar medium

Fast full-color reflective display via photoluminescent enhancement

Optimizing the Write Fidelity of MRAMs

Improvement of characteristics of NbO2 selector and full integration of 4F2 2x-nm tech 1S1R ReRAM

300 nm Pitch W2W HBI for CFET and 3D DRAM Through Module Co-optimization

Improving memristor memory with sneak current sharing

Novel Low Thermal Budget Bonding Using Single Wafer Thermal Processing System, Resulting in Excellent Wafer-to-Wafer Hybrid Bonding at sub-0.5um Pitch

Low Power Reflective Display with Print-Like Color via Novel Electronic Inks

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