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Structural Identification of Ginsenoside Based on UPLC-QTOF-MS of Black Ginseng ( Panax Ginseng C.A. Mayer)

Metabolites, 2024-01, Vol.14 (1), p.62

2024

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Analysis of black carbon, particulate matter, and gaseous pollutants in an industrial area in Korea

Atmospheric environment (1994), 2011-12, Vol.45 (40), p.7698-7704

2011

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Roles of interfacial TiOxN1−x layer and TiN electrode on bipolar resistive switching in TiN/TiO2/TiN frameworks

Applied physics letters, 2010-05, Vol.96 (22)

2010

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NbO2-based low power and cost effective 1S1R switching for high density cross point ReRAM Application

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014, p.1-2

2014

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Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide; TiO2, ZrO2, and HfO2

Journal of the Electrochemical Society, 2011, Vol.158 (4), p.H417

2011

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Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO2 Resistive Material Depending on the Thickness of Ti

Jpn J Appl Phys, 2011-04, Vol.50 (4), p.04DD14-04DD14-4

2011

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Dependence of the switching characteristics of resistance random access memory on the type of transition metal oxide

2010 Proceedings of the European Solid State Device Research Conference, 2010, p.400-403

2010

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The effect of crystallinity of HfO2 on the resistive memory switching reliability

2011 International Reliability Physics Symposium, 2011, p.6B.5.1-6B.5.5

2011

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In situ TEM observation of void formation and migration in phase change memory devices with confined nanoscale Ge2Sb2Te5

Nanoscale advances, 2020-09, Vol.2 (9), p.3841-3848

2020

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향기 있는 황색 소형 호접란 ‘옐로우센트’ 육성

원예과학기술지, 2019, 37(2), , pp.304-310

2019

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TEM observation of void formation and migration in phase change memory devices with confined nanoscale GeSbTe

Nanoscale advances, 2020-09, Vol.2 (9), p.3841-3848

2020

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In situ TEM observation of void formation and migration in phase change memory devices with confined nanoscale Ge 2 Sb 2 Te 5

Nanoscale advances, 2020-09, Vol.2 (9), p.3841-3848

2020

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Bipolar switching properties of amorphous TiO sub(2) thin film grown on TiN/Si substrate

Current applied physics, 2014-12, Vol.14 (12), p.1825-1830

2014

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Breeding of Yellow Small-Type Phalaenopsis ‘Yellow Scent’ with Fragrance

Weon'ye gwahag gi'sulji, 2019-04, Vol.37 (2), p.304-310

2019

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Improvement of characteristics of NbO2 selector and full integration of 4F2 2x-nm tech 1S1R ReRAM

2015 IEEE International Electron Devices Meeting (IEDM), 2015, p.10.3.1-10.3.4

2015

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Roles of interfacial TiO x N 1 − x layer and TiN electrode on bipolar resistive switching in TiN / TiO 2 / TiN frameworks

Applied physics letters, 2010-06, Vol.96 (22), p.223502-223502-3

2010

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Effect of HfO2 Crystallinity on Device Characteristics and Reliability for Resistance Random Access Memory

Electrochemical and solid-state letters, 2011, Vol.14 (8), p.H337

2011

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Publisher’s Note: Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide: TiO2, ZrO2, and HfO2 [J. Electrochem. Soc., 158, H417 (2011)]

Journal of the Electrochemical Society, 2011, Vol.158 (5), p.S12

2011

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Microstructure and Resistive Switching Behavior of Amorphous Pr0.7Ca0.3MnO3 Films Grown under Various Oxygen Pressures

ECS solid state letters, 2013-05, Vol.2 (7), p.N21-N25

2013

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Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO 2 Resistive Material Depending on the Thickness of Ti

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4S), p.4

2011

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Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO 2 Resistive Material Depending on the Thickness of Ti

Japanese Journal of Applied Physics, 2011-04, Vol.50 (4S), p.4

2011

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SPECIFIC IDENTIFICATION OF HERPES SIMPLEX VIRUS IN HUMAN ESOPHAGUS WITH RAPID IN SITU HYBRIDIZATION IN 5 CASES

Chinese medical sciences journal, 2008-06, Vol.23 (2), p.126-128

2008

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The rice narrow leaf2 and narrow leaf3 loci encode WUSCHEL-related homeobox 3A (OsWOX3A) and function in leaf, spikelet, tiller and lateral root development

The New phytologist, 2013-06, Vol.198 (4), p.1071-1084

2013

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CEO Turnover and Corporate Governance: Evidence from Korea

SSRN Electronic Journal

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The rice faded green leaf locus encodes protochlorophyllide oxidoreductase B and is essential for chlorophyll synthesis under high light conditions

The Plant journal : for cell and molecular biology, 2013-04, Vol.74 (1), p.122-133

2013

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Structural Identification of Ginsenoside Based on UPLC-QTOF-MS of Black Ginseng ( Panax Ginseng C.A. Mayer)

Analysis of black carbon, particulate matter, and gaseous pollutants in an industrial area in Korea

Roles of interfacial TiOxN1−x layer and TiN electrode on bipolar resistive switching in TiN/TiO2/TiN frameworks

NbO2-based low power and cost effective 1S1R switching for high density cross point ReRAM Application

Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide; TiO2, ZrO2, and HfO2

Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO2 Resistive Material Depending on the Thickness of Ti

Dependence of the switching characteristics of resistance random access memory on the type of transition metal oxide

The effect of crystallinity of HfO2 on the resistive memory switching reliability

In situ TEM observation of void formation and migration in phase change memory devices with confined nanoscale Ge2Sb2Te5

향기 있는 황색 소형 호접란 ‘옐로우센트’ 육성

TEM observation of void formation and migration in phase change memory devices with confined nanoscale GeSbTe

In situ TEM observation of void formation and migration in phase change memory devices with confined nanoscale Ge 2 Sb 2 Te 5

Bipolar switching properties of amorphous TiO sub(2) thin film grown on TiN/Si substrate

Breeding of Yellow Small-Type Phalaenopsis ‘Yellow Scent’ with Fragrance

Improvement of characteristics of NbO2 selector and full integration of 4F2 2x-nm tech 1S1R ReRAM

Roles of interfacial TiO x N 1 − x layer and TiN electrode on bipolar resistive switching in TiN / TiO 2 / TiN frameworks

Effect of HfO2 Crystallinity on Device Characteristics and Reliability for Resistance Random Access Memory

Publisher’s Note: Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide: TiO2, ZrO2, and HfO2 [J. Electrochem. Soc., 158, H417 (2011)]

Microstructure and Resistive Switching Behavior of Amorphous Pr0.7Ca0.3MnO3 Films Grown under Various Oxygen Pressures

Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO 2 Resistive Material Depending on the Thickness of Ti

Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO 2 Resistive Material Depending on the Thickness of Ti

SPECIFIC IDENTIFICATION OF HERPES SIMPLEX VIRUS IN HUMAN ESOPHAGUS WITH RAPID IN SITU HYBRIDIZATION IN 5 CASES

The rice narrow leaf2 and narrow leaf3 loci encode WUSCHEL-related homeobox 3A (OsWOX3A) and function in leaf, spikelet, tiller and lateral root development

CEO Turnover and Corporate Governance: Evidence from Korea

The rice faded green leaf locus encodes protochlorophyllide oxidoreductase B and is essential for chlorophyll synthesis under high light conditions

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