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Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes

Journal of applied physics, 2016-03, Vol.119 (9)

2016

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Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

Journal of applied physics, 2015-01, Vol.117 (2)

2015

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Ideal phonon-scattering-limited mobility in inversion channels of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations

Applied physics letters, 2019-09, Vol.115 (13)

2019

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Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes

Japanese Journal of Applied Physics, 2018-04, Vol.57 (4S), p.4

2018

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Direct visualization of kinetic reversibility of crystallization and dissolution behavior at solution growth interface of SiC in Si-Cr solvent

Surfaces and interfaces, 2022-02, Vol.28, p.101664, Article 101664

2022

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Breaking the Theoretical Limit of 6.5 kV-Class 4H-SiC Super-Junction (SJ) MOSFETs by Trench-Filling Epitaxial Growth

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019, p.39-42

2019

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Dependences of contraction/expansion of stacking faults on temperature and current density in 4H-SiC p-i-n diodes

Japanese Journal of Applied Physics, 2018-06, Vol.57 (6), p.61301

2018

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Structural analysis of interfacial dislocations and expanded single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes

Japanese Journal of Applied Physics, 2019-01, Vol.58 (1), p.11005

2019

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Gibbs-Thomson effect on aluminum doping during trench-filling epitaxial growth of 4H-SiC

Japanese Journal of Applied Physics, 2019-05, Vol.58 (5), p.51009

2019

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Modeling of Al Doping During 4H-SiC Chemical-Vapor-Deposition Trench Filling

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.470-475

2019

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Strong impact of slight trench direction misalignment from on deep trench filling epitaxy for SiC super-junction devices

Japanese Journal of Applied Physics, 2017-04, Vol.56 (4S), p.4-04CR05

2017

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Accurate evaluation of fast threshold voltage shift for SiC MOS devices under various gate bias stress conditions

Japanese Journal of Applied Physics, 2018-04, Vol.57 (4S), p.4, Article 04FA07

2018

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Extension of stacking faults in 4H-SiC pn diodes under a high current pulse stress

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Impact of rapid cooling process in ultrahigh-temperature oxidation of 4H-SiC(0001)

Japanese Journal of Applied Physics, 2017-04, Vol.56 (4S), p.4-04CR04

2017

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Analysis of trench-filling epitaxial growth of 4H-SiC based on continuous fluid approximation including Gibbs-Thomson effect

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs

Materials science forum, 2015-06, Vol.821-823, p.842-846

2015

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Exact Characterization of Threshold Voltage Instability in 4H-SiC MOSFETs by Non-Relaxation Method

Materials science forum, 2015-06, Vol.821-823, p.685-688

2015

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Effect of H2 Carrier Gas on CVD Growth Rate for 4H-SiC Trench Filling

Materials science forum, 2016-05, Vol.858, p.181-184

2016

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Analysis of Dislocation Structures in 4H-SiC by Synchrotron X-Ray Topography

Electrical engineering in Japan, 2016-11, Vol.197 (3), p.3-17

2016

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Evaluation of drain current decrease by AC gate bias stress in commercially available SiC MOSFETs

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2017, p.395-398

2017

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Screening of metal flux for SiC solution growth by a thin-film combinatorial method

Science and technology of advanced materials, 2011-10, Vol.12 (5), p.054209-054209

2011

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Conduction Mechanism of Leakage Current in Thermal Oxide on 4H-SiC

Materials science forum, 2014-02, Vol.778-780, p.579-582

2014

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Reliability Improvement and Optimization of Trench Orientation of 4H-SiC Trench-Gate Oxide

Materials science forum, 2014-02, Vol.778-780, p.537-540

2014

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Depth Distribution of Defects in SiC PiN Diodes Formed Using Ion Implantation or Epitaxial Growth

physica status solidi (b), 2022-09, Vol.259 (9), p.n/a

2022

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Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation

IEEE electron device letters, 2014-12, Vol.35 (12), p.1176-1178

2014

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Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes

Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC

Ideal phonon-scattering-limited mobility in inversion channels of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations

Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes

Direct visualization of kinetic reversibility of crystallization and dissolution behavior at solution growth interface of SiC in Si-Cr solvent

Breaking the Theoretical Limit of 6.5 kV-Class 4H-SiC Super-Junction (SJ) MOSFETs by Trench-Filling Epitaxial Growth

Dependences of contraction/expansion of stacking faults on temperature and current density in 4H-SiC p-i-n diodes

Structural analysis of interfacial dislocations and expanded single Shockley-type stacking faults in forward-current degradation of 4H-SiC p-i-n diodes

Gibbs-Thomson effect on aluminum doping during trench-filling epitaxial growth of 4H-SiC

Modeling of Al Doping During 4H-SiC Chemical-Vapor-Deposition Trench Filling

Strong impact of slight trench direction misalignment from on deep trench filling epitaxy for SiC super-junction devices

Accurate evaluation of fast threshold voltage shift for SiC MOS devices under various gate bias stress conditions

Extension of stacking faults in 4H-SiC pn diodes under a high current pulse stress

Impact of rapid cooling process in ultrahigh-temperature oxidation of 4H-SiC(0001)

Analysis of trench-filling epitaxial growth of 4H-SiC based on continuous fluid approximation including Gibbs-Thomson effect

Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs

Exact Characterization of Threshold Voltage Instability in 4H-SiC MOSFETs by Non-Relaxation Method

Effect of H2 Carrier Gas on CVD Growth Rate for 4H-SiC Trench Filling

Analysis of Dislocation Structures in 4H-SiC by Synchrotron X-Ray Topography

Evaluation of drain current decrease by AC gate bias stress in commercially available SiC MOSFETs

Screening of metal flux for SiC solution growth by a thin-film combinatorial method

Conduction Mechanism of Leakage Current in Thermal Oxide on 4H-SiC

Reliability Improvement and Optimization of Trench Orientation of 4H-SiC Trench-Gate Oxide

Depth Distribution of Defects in SiC PiN Diodes Formed Using Ion Implantation or Epitaxial Growth

Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation

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