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Anomalous low energy phonon dispersion in bulk silicon-germanium observed by inelastic x-ray scattering

Applied physics letters, 2020-06, Vol.116 (24)

2020

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Growth and fundamental properties of SiGe bulk crystals

Journal of crystal growth, 2005-02, Vol.275 (1), p.91-98

Yonenaga, I.

2005

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Dislocation dynamics in SiGe alloys

Journal of physics. Conference series, 2013-01, Vol.471 (1), p.12002-10

Yonenaga, I

2013

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Insight into physical processes controlling the mechanical properties of the wurtzite group-III nitride family

Journal of crystal growth, 2018-10, Vol.500, p.23-27

2018

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Optical and electrical properties of dislocations in plastically deformed GaN

Journal of crystal growth, 2014-10, Vol.403, p.72-76

2014

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In-situ micro and near-field photo-excitation under transmission electron microscopy

Applied surface science, 2014-05, Vol.302, p.29-31

2014

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Dislocation–impurity interaction in Si

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124, p.293-296

Yonenaga, I.

2005

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Thermocyclic stability of candidate Seebeck coefficient standard reference materials at high temperature

Journal of applied physics, 2014-05, Vol.115 (19)

2014

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Thermo-mechanical stability of wide-bandgap semiconductors: high temperature hardness of SiC, AlN, GaN, ZnO and ZnSe

Physica. B, Condensed matter, 2001-12, Vol.308, p.1150-1152

Yonenaga, I.

2001

Volltextzugriff (PDF)

How to best measure atomic segregation to grain boundaries by analytical transmission electron microscopy

Journal of materials science, 2014-06, Vol.49 (11), p.3898-3908

2014

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A novel constitutive model for semiconductors: The case of silicon

Journal of the mechanics and physics of solids, 2013-12, Vol.61 (12), p.2402-2432

2013

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Nanoscopic analysis of oxygen segregation at tilt boundaries in silicon ingots using atom probe tomography combined with TEM and ab initio calculations

Journal of microscopy (Oxford), 2017-12, Vol.268 (3), p.230-238

2017

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Spectroscopic identification of shallow muonium acceptors in Si0.06Ge0.94

Applied physics letters, 2014-09, Vol.105 (12)

2014

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High-temperature strength of III–V nitride crystals

Journal of physics. Condensed matter, 2002-12, Vol.14 (48), p.12947-12951

Yonenaga, I

2002

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Nitrogen effects on generation and velocity of dislocations in Czochralski-grown silicon

Journal of applied physics, 2005-07, Vol.98 (2), p.023517-023517-6

Yonenaga, I.

2005

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Czochralski growth of heavily indium-doped Si crystals and co-doping effects of group-IV elements

Journal of crystal growth, 2014-05, Vol.393, p.45-48

2014

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Optical properties of edge dislocations on ( 1 1 ¯ 00 ) prismatic planes in wurtzite ZnO introduced at elevated temperatures

Journal of applied physics, 2012-06, Vol.111 (11), p.113514-113514-6

2012

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Czochralski growth of heavily tin-doped Si crystals

Journal of crystal growth, 2014-06, Vol.395, p.94-97

2014

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Determination of carrier mobility vs resistivity relation in Czochralski-grown n- and p-type Si x Ge1−x (0.93 < x < 0.96) single crystals

Journal of materials science. Materials in electronics, 2008-04, Vol.19 (4), p.315-318

Yonenaga, I.

2008

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Interstitial oxygen behavior for thermal double donor formation in germanium: Infrared absorption studies

Journal of applied physics, 2013-02, Vol.113 (7)

2013

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Determination of carrier mobility vs resistivity relation in Czochralski-grown n- and p-type SixGe1−x (0.93 < x < 0.96) single crystals

Journal of materials science. Materials in electronics, 2008, Vol.19 (4), p.315-318

Yonenaga, I.

2008

Volltextzugriff (PDF)

Slip systems in wurtzite ZnO activated by Vickers indentation on {21¯1¯0} and {101¯0} surfaces at elevated temperatures

Journal of crystal growth, 2014-05, Vol.393, p.119-122

2014

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Cellular structures in Czochralski-grown SiGe bulk crystal

Journal of crystal growth, 2010-04, Vol.312 (8), p.1065-1068

2010

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Recent knowledge of strength and dislocation mobility in wide band-gap semiconductors

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4999-5001

2009

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Constitutive modeling of intrinsic silicon monocrystals in easy glide

Journal of applied physics, 2010-02, Vol.107 (3), p.033512-033512-9

2010

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Anomalous low energy phonon dispersion in bulk silicon-germanium observed by inelastic x-ray scattering

Growth and fundamental properties of SiGe bulk crystals

Dislocation dynamics in SiGe alloys

Insight into physical processes controlling the mechanical properties of the wurtzite group-III nitride family

Optical and electrical properties of dislocations in plastically deformed GaN

In-situ micro and near-field photo-excitation under transmission electron microscopy

Dislocation–impurity interaction in Si

Thermocyclic stability of candidate Seebeck coefficient standard reference materials at high temperature

Thermo-mechanical stability of wide-bandgap semiconductors: high temperature hardness of SiC, AlN, GaN, ZnO and ZnSe

How to best measure atomic segregation to grain boundaries by analytical transmission electron microscopy

A novel constitutive model for semiconductors: The case of silicon

Nanoscopic analysis of oxygen segregation at tilt boundaries in silicon ingots using atom probe tomography combined with TEM and ab initio calculations

Spectroscopic identification of shallow muonium acceptors in Si0.06Ge0.94

High-temperature strength of III–V nitride crystals

Nitrogen effects on generation and velocity of dislocations in Czochralski-grown silicon

Czochralski growth of heavily indium-doped Si crystals and co-doping effects of group-IV elements

Optical properties of edge dislocations on ( 1 1 ¯ 00 ) prismatic planes in wurtzite ZnO introduced at elevated temperatures

Czochralski growth of heavily tin-doped Si crystals

Determination of carrier mobility vs resistivity relation in Czochralski-grown n- and p-type Si x Ge1−x (0.93 < x < 0.96) single crystals

Interstitial oxygen behavior for thermal double donor formation in germanium: Infrared absorption studies

Determination of carrier mobility vs resistivity relation in Czochralski-grown n- and p-type SixGe1−x (0.93 < x < 0.96) single crystals

Slip systems in wurtzite ZnO activated by Vickers indentation on {21¯1¯0} and {101¯0} surfaces at elevated temperatures

Cellular structures in Czochralski-grown SiGe bulk crystal

Recent knowledge of strength and dislocation mobility in wide band-gap semiconductors

Constitutive modeling of intrinsic silicon monocrystals in easy glide

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