UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 303

Sortiert nach

InGaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

Journal of applied physics, 2019-03, Vol.125 (11)

2019

Link zum Volltext

Verfügbarkeit prüfen

InAs/GaSb-on-insulator single channel complementary metal-oxide-semiconductor transistors on Si structure

Applied physics letters, 2016-11, Vol.109 (21)

2016

Link zum Volltext

Verfügbarkeit prüfen

Ultrathin body GaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

Applied physics letters, 2015-02, Vol.106 (7)

2015

Link zum Volltext

Verfügbarkeit prüfen

Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature

Applied physics letters, 2010-12, Vol.97 (24)

2010

Link zum Volltext

Verfügbarkeit prüfen

Impact of interfacial InAs layers on Al2O3/GaSb metal-oxide-semiconductor interface properties

Applied physics letters, 2015-03, Vol.106 (12)

2015

Link zum Volltext

Verfügbarkeit prüfen

Self-aligned Ni-GaSb source/drain junctions for GaSb p-channel metal-oxide-semiconductor field-effect transistors

Applied physics letters, 2014-03, Vol.104 (9)

2014

Link zum Volltext

Verfügbarkeit prüfen

Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process

Applied physics letters, 2014-06, Vol.104 (26)

2014

Link zum Volltext

Verfügbarkeit prüfen

P-type conductivity control of Si-doped GaAsSb layers grown by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, 2015-01, Vol.54 (1), p.15506-1-015506-4

2015

Link zum Volltext

Verfügbarkeit prüfen

Unintentional Ga incorporation in metalorganic vapor phase epitaxy of In-containing III-nitride semiconductors

Journal of crystal growth, 2013-11, Vol.382, p.36-40

2013

Link zum Volltext

Verfügbarkeit prüfen

Fabrication of InP-PDs on Silica-Based PLC Using Heterogeneous Integration Technique

Journal of lightwave technology, 2014-08, Vol.32 (16), p.2841-2848

2014

Link zum Volltext
IEEE_Xplore

Machine Learning System Architectural Pattern for Improving Operational Stability

2019 IEEE International Conference on Software Architecture Companion (ICSA-C), 2019, p.267-274

Yokoyama, Haruki

2019

Link zum Volltext

Verfügbarkeit prüfen

Barrier Thickness Dependence of Photovoltaic Characteristics of InGaN/GaN Multiple Quantum Well Solar Cells

Japanese Journal of Applied Physics, 2012-10, Vol.51 (10), p.10ND10-10ND10-5

2012

Link zum Volltext

Verfügbarkeit prüfen

Impact of strained GaAs spacer between InP emitter and GaAs1−ySby base on structural properties and electrical characteristics of MOCVD-grown InP/GaAs1−ySby/InP DHBTs

Journal of crystal growth, 2014-06, Vol.395, p.31-37

2014

Link zum Volltext

Verfügbarkeit prüfen

Observation of Negative Differential Resistance in a GaN/AlGaN/GaN: Possible Tunneling Junction Using Polarization

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JN03-08JN03-3

2013

Link zum Volltext

Verfügbarkeit prüfen

Reduction of In Composition in Heavily Zn-Doped InAlGaAs Layers Grown at Low Temperature by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics, 2012-02, Vol.51 (2), p.025601-025601-4

2012

Link zum Volltext

Verfügbarkeit prüfen

Systematic Study of Insulator Deposition Effect (Si 3 N 4 , SiO 2 , AlN, and Al 2 O 3 ) on Electrical Properties in AlGaN/GaN Heterostructures

Japanese Journal of Applied Physics, 2007-02, Vol.46 (2R), p.547

2007

Link zum Volltext

Verfügbarkeit prüfen

Reduction of In Composition in Heavily Zn-Doped InAlGaAs Layers Grown at Low Temperature by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics, 2012-02, Vol.51 (2R), p.25601

2012

Link zum Volltext

Verfügbarkeit prüfen

Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors

Japanese Journal of Applied Physics, 2013-04, Vol.52 (4), p.04CF02-04CF02-7

2013

Link zum Volltext

Verfügbarkeit prüfen

Triple-mesa Avalanche Photodiode With Inverted P-Down Structure for Reliability and Stability

Journal of lightwave technology, 2014-04, Vol.32 (8), p.1543-1548

2014

Link zum Volltext
IEEE_Xplore

50-Gbit/s vertical illumination avalanche photodiode for 400-Gbit/s Ethernet systems

Optics express, 2014-06, Vol.22 (12), p.14681-14687

2014

Link zum Volltext

Verfügbarkeit prüfen

Characterization of interface properties of Al 2 O 3 /n-GaSb and Al 2 O 3 /InAs/n-GaSb metal-oxide-semiconductor structures

Japanese Journal of Applied Physics, 2022-06, Vol.61 (6), p.61010

2022

Link zum Volltext

Verfügbarkeit prüfen

Characterization of interface properties of Al2O3/n-GaSb and Al2O3/InAs/n-GaSb metal-oxide-semiconductor structures

Japanese Journal of Applied Physics, 2022-06, Vol.61 (6), p.061010

2022

Link zum Volltext

Verfügbarkeit prüfen

Improvement of current gain of C-doped GaAsSb-base heterojunction bipolar transistors by using an InAlP emitter

Applied physics letters, 2005-07, Vol.87 (2), p.023503-023503-2

2005

Link zum Volltext

Verfügbarkeit prüfen

Barrier Thickness Dependence of Photovoltaic Characteristics of InGaN/GaN Multiple Quantum Well Solar Cells

Japanese Journal of Applied Physics, 2012-10, Vol.51 (10S), p.10

2012

Link zum Volltext

Verfügbarkeit prüfen

Design and Performance of High-Speed Avalanche Photodiodes for 100-Gb/s Systems and Beyond

Journal of lightwave technology, 2015-03, Vol.33 (5), p.984-990

2015

Link zum Volltext
IEEE_Xplore

1 – 25 von 303

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(227)
Mit Volltextzugriff
(295)

Publikationsform

Sprache

Englisch
(289)
Japanisch
(113)

Erscheinungsjahr

n.n

Thema

Science & Technology
(180)
Physical Sciences
(86)
Physics
(74)
Life Sciences & Biomedicine
(71)
Physics, Applied
(70)
Humans
(55)
Technology
(48)
Male
(39)
Engineering
(30)
Female
(29)
Engineering, Electrical & Electronic
(28)
Exact Sciences And Technology
(25)
Adult
(24)
Aged
(24)
Materials Science
(21)
Middle Aged
(21)
Optics
(20)
General Physics And Astronomy
(17)
Animals
(16)
Biological And Medical Sciences
(16)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

InGaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

InAs/GaSb-on-insulator single channel complementary metal-oxide-semiconductor transistors on Si structure

Ultrathin body GaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding

Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature

Impact of interfacial InAs layers on Al2O3/GaSb metal-oxide-semiconductor interface properties

Self-aligned Ni-GaSb source/drain junctions for GaSb p-channel metal-oxide-semiconductor field-effect transistors

Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process

P-type conductivity control of Si-doped GaAsSb layers grown by metalorganic chemical vapor deposition

Unintentional Ga incorporation in metalorganic vapor phase epitaxy of In-containing III-nitride semiconductors

Fabrication of InP-PDs on Silica-Based PLC Using Heterogeneous Integration Technique

Machine Learning System Architectural Pattern for Improving Operational Stability

Barrier Thickness Dependence of Photovoltaic Characteristics of InGaN/GaN Multiple Quantum Well Solar Cells

Impact of strained GaAs spacer between InP emitter and GaAs1−ySby base on structural properties and electrical characteristics of MOCVD-grown InP/GaAs1−ySby/InP DHBTs

Observation of Negative Differential Resistance in a GaN/AlGaN/GaN: Possible Tunneling Junction Using Polarization

Reduction of In Composition in Heavily Zn-Doped InAlGaAs Layers Grown at Low Temperature by Metalorganic Chemical Vapor Deposition

Systematic Study of Insulator Deposition Effect (Si 3 N 4 , SiO 2 , AlN, and Al 2 O 3 ) on Electrical Properties in AlGaN/GaN Heterostructures

Reduction of In Composition in Heavily Zn-Doped InAlGaAs Layers Grown at Low Temperature by Metalorganic Chemical Vapor Deposition

Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors

Triple-mesa Avalanche Photodiode With Inverted P-Down Structure for Reliability and Stability

50-Gbit/s vertical illumination avalanche photodiode for 400-Gbit/s Ethernet systems

Characterization of interface properties of Al 2 O 3 /n-GaSb and Al 2 O 3 /InAs/n-GaSb metal-oxide-semiconductor structures

Characterization of interface properties of Al2O3/n-GaSb and Al2O3/InAs/n-GaSb metal-oxide-semiconductor structures

Improvement of current gain of C-doped GaAsSb-base heterojunction bipolar transistors by using an InAlP emitter

Barrier Thickness Dependence of Photovoltaic Characteristics of InGaN/GaN Multiple Quantum Well Solar Cells

Design and Performance of High-Speed Avalanche Photodiodes for 100-Gb/s Systems and Beyond

Suchergebnisse filtern