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High Threshold Voltage Uniformity and Low Hysteresis Recessed-Gate Al2O3/AlN/GaN MISFET by Selective Area Growth

IEEE transactions on electron devices, 2017-04, Vol.64 (4), p.1554-1560

2017

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Tensile Deformation Behavior of a Directionally Solidified Superalloy at Cryogenic Temperatures

Crystals (Basel), 2022-07, Vol.12 (7), p.886

2022

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A review of selective area grown recess structure for insulated-gate E-mode GaN transistors

Japanese Journal of Applied Physics, 2020-01, Vol.59 (SA), p.SA0806

2020

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Charge Trapping Memory Characteristics of Amorphous-Indium-Gallium-Zinc Oxide Thin-Film Transistors With Defect-Engineered Alumina Dielectric

IEEE transactions on electron devices, 2015-04, Vol.62 (4), p.1184-1188

2015

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Effect of compositionally graded AlGaN buffer layer grown by different functions of trimethylaluminum flow rates on the properties of GaN on Si (111) substrates

Journal of crystal growth, 2013-08, Vol.376, p.23-27

2013

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Investigation of O3-Al2O3/H2O-Al2O3 dielectric bilayer deposited by atomic-layer deposition for GaN MOS capacitors

Physica status solidi. A, Applications and materials science, 2016-10, Vol.213 (10), p.2693-2698

2016

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Normally-off GaN recessed-gate MOSFET fabricated by selective area growth technique

Applied physics express, 2014-01, Vol.7 (1), p.16502

2014

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The suppression of background doping in selective area growth technique for high performance normally-off AlGaN/GaN MOSFET

Journal of materials science. Materials in electronics, 2015-12, Vol.26 (12), p.9753-9758

2015

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Influence of interface contamination on transport properties of two-dimensional electron gas in selective area growth AlGaN/GaN heterostructure

Journal of materials science. Materials in electronics, 2016-09, Vol.27 (9), p.9061-9066

2016

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Effect of hydrogen poisoning on p-gate AlGaN/GaN HEMTs

Journal of physics. D, Applied physics, 2024-10, Vol.57 (40), p.405104

2024

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Comparison of Two Types of Recessed-Gate Normally-Off AlGaN/GaN Heterostructure Field Effect Transistors

Japanese Journal of Applied Physics, 2012-05, Vol.51 (5), p.054103-054103-5

2012

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A novel normally-off GaN MISFET with an in-situ AlN space layer using selective area growth

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.111-114

2016

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Evaluation of p-GaN HEMTs degradation under high temperatures forward and reverse gate bias stress

Journal of physics. Conference series, 2023-11, Vol.2645 (1), p.12016

2023

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Quasi-vertical diamond temperature sensor by using Schottky–pn junction structure diode

Materials science in semiconductor processing, 2022-12, Vol.152, p.107095, Article 107095

2022

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Comparison of Two Types of Recessed-Gate Normally-Off AlGaN/GaN Heterostructure Field Effect Transistors

Japanese Journal of Applied Physics, 2012-05, Vol.51 (5R), p.54103

2012

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Effect of geometry on the sensing mechanism of GaN Schottky barrier diode temperature sensor

IEICE Electronics Express, 2021-10, Vol.18 (19), p.20210332-20210332, Article 18.20210332

2021

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High-Mobility Normally OFF Al2O3/AlGaN/GaN MISFET With Damage-Free Recessed-Gate Structure

IEEE electron device letters, 2018-11, Vol.39 (11), p.1720-1723

2018

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Threshold Voltage Engineering in Al2O3/AlGaN/GaN MISHEMTs with Thin Barrier Layer: MIS-gate Charge Control and High Threshold Voltage Achievement

2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021, p.339-342

2021

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Investigations of leakage current properties in semi-insulating GaN grown on Si(1 1 1) substrate with low-temperature AlN interlayers

Journal of physics. D, Applied physics, 2014-01, Vol.47 (4), p.45103

2014

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High-Mobility Normally OFF Al 2 O 3 /AlGaN/GaN MISFET With Damage-Free Recessed-Gate Structure

IEEE electron device letters, 2018-11, Vol.39 (11), p.1720-1723

2018

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High Threshold Voltage Uniformity and Low Hysteresis Recessed-Gate Al 2 O 3 /AlN/GaN MISFET by Selective Area Growth

IEEE transactions on electron devices, 2017-04, Vol.64 (4), p.1554-1560

2017

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Effect of AlN/GaN superlattice buffer on the strain state in GaN-on-Si(111) system

Japanese Journal of Applied Physics, 2015-01, Vol.54 (1), p.15505-1-015505-5

2015

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Influence of the carbon-doping location on the material and electrical properties of a AlGaN GaN heterostructure on Si substrate

Semiconductor science and technology, 2015-10, Vol.30 (10), p.105037

2015

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Investigation of breakdown properties in the carbon doped GaN by photoluminescence analysis

Physica status solidi. C, 2016-05, Vol.13 (5-6), p.345-349

2016

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Current transport mechanism of AlGaN/GaN Schottky barrier diode with fully recessed Schottky anode

Japanese Journal of Applied Physics, 2015-01, Vol.54 (1), p.11001-1-011001-6

2015

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High Threshold Voltage Uniformity and Low Hysteresis Recessed-Gate Al2O3/AlN/GaN MISFET by Selective Area Growth

Tensile Deformation Behavior of a Directionally Solidified Superalloy at Cryogenic Temperatures

A review of selective area grown recess structure for insulated-gate E-mode GaN transistors

Charge Trapping Memory Characteristics of Amorphous-Indium-Gallium-Zinc Oxide Thin-Film Transistors With Defect-Engineered Alumina Dielectric

Effect of compositionally graded AlGaN buffer layer grown by different functions of trimethylaluminum flow rates on the properties of GaN on Si (111) substrates

Investigation of O3-Al2O3/H2O-Al2O3 dielectric bilayer deposited by atomic-layer deposition for GaN MOS capacitors

Normally-off GaN recessed-gate MOSFET fabricated by selective area growth technique

The suppression of background doping in selective area growth technique for high performance normally-off AlGaN/GaN MOSFET

Influence of interface contamination on transport properties of two-dimensional electron gas in selective area growth AlGaN/GaN heterostructure

Effect of hydrogen poisoning on p-gate AlGaN/GaN HEMTs

Comparison of Two Types of Recessed-Gate Normally-Off AlGaN/GaN Heterostructure Field Effect Transistors

A novel normally-off GaN MISFET with an in-situ AlN space layer using selective area growth

Evaluation of p-GaN HEMTs degradation under high temperatures forward and reverse gate bias stress

Quasi-vertical diamond temperature sensor by using Schottky–pn junction structure diode

Comparison of Two Types of Recessed-Gate Normally-Off AlGaN/GaN Heterostructure Field Effect Transistors

Effect of geometry on the sensing mechanism of GaN Schottky barrier diode temperature sensor

High-Mobility Normally OFF Al2O3/AlGaN/GaN MISFET With Damage-Free Recessed-Gate Structure

Threshold Voltage Engineering in Al2O3/AlGaN/GaN MISHEMTs with Thin Barrier Layer: MIS-gate Charge Control and High Threshold Voltage Achievement

Investigations of leakage current properties in semi-insulating GaN grown on Si(1 1 1) substrate with low-temperature AlN interlayers

High-Mobility Normally OFF Al 2 O 3 /AlGaN/GaN MISFET With Damage-Free Recessed-Gate Structure

High Threshold Voltage Uniformity and Low Hysteresis Recessed-Gate Al 2 O 3 /AlN/GaN MISFET by Selective Area Growth

Effect of AlN/GaN superlattice buffer on the strain state in GaN-on-Si(111) system

Influence of the carbon-doping location on the material and electrical properties of a AlGaN GaN heterostructure on Si substrate

Investigation of breakdown properties in the carbon doped GaN by photoluminescence analysis

Current transport mechanism of AlGaN/GaN Schottky barrier diode with fully recessed Schottky anode

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