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High Threshold Voltage Uniformity and Low Hysteresis Recessed-Gate Al2O3/AlN/GaN MISFET by Selective Area Growth

IEEE transactions on electron devices, 2017-04, Vol.64 (4), p.1554-1560

2017

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Tensile Deformation Behavior of a Directionally Solidified Superalloy at Cryogenic Temperatures

Crystals (Basel), 2022-07, Vol.12 (7), p.886

2022

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A review of selective area grown recess structure for insulated-gate E-mode GaN transistors

Japanese Journal of Applied Physics, 2020-01, Vol.59 (SA), p.SA0806

2020

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Charge Trapping Memory Characteristics of Amorphous-Indium-Gallium-Zinc Oxide Thin-Film Transistors With Defect-Engineered Alumina Dielectric

IEEE transactions on electron devices, 2015-04, Vol.62 (4), p.1184-1188

2015

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Effect of compositionally graded AlGaN buffer layer grown by different functions of trimethylaluminum flow rates on the properties of GaN on Si (111) substrates

Journal of crystal growth, 2013-08, Vol.376, p.23-27

2013

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Recent Progress on Photoelectrochemical Water Splitting of Graphitic Carbon Nitride (g−CN) Electrodes

Nanomaterials (Basel, Switzerland), 2022-07, Vol.12 (14), p.2374

2022

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Investigation of O3-Al2O3/H2O-Al2O3 dielectric bilayer deposited by atomic-layer deposition for GaN MOS capacitors

Physica status solidi. A, Applications and materials science, 2016-10, Vol.213 (10), p.2693-2698

2016

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The suppression of background doping in selective area growth technique for high performance normally-off AlGaN/GaN MOSFET

Journal of materials science. Materials in electronics, 2015-12, Vol.26 (12), p.9753-9758

2015

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Influence of interface contamination on transport properties of two-dimensional electron gas in selective area growth AlGaN/GaN heterostructure

Journal of materials science. Materials in electronics, 2016-09, Vol.27 (9), p.9061-9066

2016

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Effect of hydrogen poisoning on p-gate AlGaN/GaN HEMTs

Journal of physics. D, Applied physics, 2024-10, Vol.57 (40), p.405104

2024

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Comparison of Two Types of Recessed-Gate Normally-Off AlGaN/GaN Heterostructure Field Effect Transistors

Japanese Journal of Applied Physics, 2012-05, Vol.51 (5), p.054103-054103-5

2012

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A novel normally-off GaN MISFET with an in-situ AlN space layer using selective area growth

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.111-114

2016

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Evaluation of p-GaN HEMTs degradation under high temperatures forward and reverse gate bias stress

Journal of physics. Conference series, 2023-11, Vol.2645 (1), p.12016

2023

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Comparison of Two Types of Recessed-Gate Normally-Off AlGaN/GaN Heterostructure Field Effect Transistors

Japanese Journal of Applied Physics, 2012-05, Vol.51 (5R), p.54103

2012

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High-Mobility Normally OFF Al2O3/AlGaN/GaN MISFET With Damage-Free Recessed-Gate Structure

IEEE electron device letters, 2018-11, Vol.39 (11), p.1720-1723

2018

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Threshold Voltage Engineering in Al2O3/AlGaN/GaN MISHEMTs with Thin Barrier Layer: MIS-gate Charge Control and High Threshold Voltage Achievement

2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021, p.339-342

2021

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Investigations of leakage current properties in semi-insulating GaN grown on Si(1 1 1) substrate with low-temperature AlN interlayers

Journal of physics. D, Applied physics, 2014-01, Vol.47 (4), p.45103

2014

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High-Mobility Normally OFF Al 2 O 3 /AlGaN/GaN MISFET With Damage-Free Recessed-Gate Structure

IEEE electron device letters, 2018-11, Vol.39 (11), p.1720-1723

2018

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High Threshold Voltage Uniformity and Low Hysteresis Recessed-Gate Al 2 O 3 /AlN/GaN MISFET by Selective Area Growth

IEEE transactions on electron devices, 2017-04, Vol.64 (4), p.1554-1560

2017

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Effect of AlN/GaN superlattice buffer on the strain state in GaN-on-Si(111) system

Japanese Journal of Applied Physics, 2015-01, Vol.54 (1), p.15505-1-015505-5

2015

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Influence of the carbon-doping location on the material and electrical properties of a AlGaN GaN heterostructure on Si substrate

Semiconductor science and technology, 2015-10, Vol.30 (10), p.105037

2015

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Investigation of breakdown properties in the carbon doped GaN by photoluminescence analysis

Physica status solidi. C, 2016-05, Vol.13 (5-6), p.345-349

2016

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Investigation of O 3 ‐Al 2 O 3 /H 2 O‐Al 2 O 3 dielectric bilayer deposited by atomic‐layer deposition for GaN MOS capacitors

Physica status solidi. A, Applications and materials science, 2016-10, Vol.213 (10), p.2693-2698

2016

Volltextzugriff (PDF)

Investigation of O sub(3)-Al sub(2)O sub(3) /H sub(2)O-Al sub(2)O sub(3) dielectric bilayer deposited by atomic-layer deposition for GaN MOS capacitors

Physica status solidi. A, Applications and materials science, 2016-10, Vol.213 (10), p.2693-2698

2016

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Current transport mechanism of AlGaN/GaN Schottky barrier diode with fully recessed Schottky anode

Japanese Journal of Applied Physics, 2015-01, Vol.54 (1), p.11001-1-011001-6

2015

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High Threshold Voltage Uniformity and Low Hysteresis Recessed-Gate Al2O3/AlN/GaN MISFET by Selective Area Growth

Tensile Deformation Behavior of a Directionally Solidified Superalloy at Cryogenic Temperatures

A review of selective area grown recess structure for insulated-gate E-mode GaN transistors

Charge Trapping Memory Characteristics of Amorphous-Indium-Gallium-Zinc Oxide Thin-Film Transistors With Defect-Engineered Alumina Dielectric

Effect of compositionally graded AlGaN buffer layer grown by different functions of trimethylaluminum flow rates on the properties of GaN on Si (111) substrates

Recent Progress on Photoelectrochemical Water Splitting of Graphitic Carbon Nitride (g−CN) Electrodes

Investigation of O3-Al2O3/H2O-Al2O3 dielectric bilayer deposited by atomic-layer deposition for GaN MOS capacitors

The suppression of background doping in selective area growth technique for high performance normally-off AlGaN/GaN MOSFET

Influence of interface contamination on transport properties of two-dimensional electron gas in selective area growth AlGaN/GaN heterostructure

Effect of hydrogen poisoning on p-gate AlGaN/GaN HEMTs

Comparison of Two Types of Recessed-Gate Normally-Off AlGaN/GaN Heterostructure Field Effect Transistors

A novel normally-off GaN MISFET with an in-situ AlN space layer using selective area growth

Evaluation of p-GaN HEMTs degradation under high temperatures forward and reverse gate bias stress

Comparison of Two Types of Recessed-Gate Normally-Off AlGaN/GaN Heterostructure Field Effect Transistors

High-Mobility Normally OFF Al2O3/AlGaN/GaN MISFET With Damage-Free Recessed-Gate Structure

Threshold Voltage Engineering in Al2O3/AlGaN/GaN MISHEMTs with Thin Barrier Layer: MIS-gate Charge Control and High Threshold Voltage Achievement

Investigations of leakage current properties in semi-insulating GaN grown on Si(1 1 1) substrate with low-temperature AlN interlayers

High-Mobility Normally OFF Al 2 O 3 /AlGaN/GaN MISFET With Damage-Free Recessed-Gate Structure

High Threshold Voltage Uniformity and Low Hysteresis Recessed-Gate Al 2 O 3 /AlN/GaN MISFET by Selective Area Growth

Effect of AlN/GaN superlattice buffer on the strain state in GaN-on-Si(111) system

Influence of the carbon-doping location on the material and electrical properties of a AlGaN GaN heterostructure on Si substrate

Investigation of breakdown properties in the carbon doped GaN by photoluminescence analysis

Investigation of O 3 ‐Al 2 O 3 /H 2 O‐Al 2 O 3 dielectric bilayer deposited by atomic‐layer deposition for GaN MOS capacitors

Investigation of O sub(3)-Al sub(2)O sub(3) /H sub(2)O-Al sub(2)O sub(3) dielectric bilayer deposited by atomic-layer deposition for GaN MOS capacitors

Current transport mechanism of AlGaN/GaN Schottky barrier diode with fully recessed Schottky anode

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