UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Hole Mobility Enhancement in Compressively Strained Ge0.93Sn0.07 pMOSFETs

IEEE electron device letters, 2013-07, Vol.34 (7), p.831-833

2013

Volltextzugriff (PDF)

Photosynthetic functions of Synechococcus in the ocean microbiomes of diverse salinity and seasons

PloS one, 2018-01, Vol.13 (1), p.e0190266-e0190266

2018

Volltextzugriff (PDF)

Demonstration of a Ge/GeSn/Ge Quantum-Well Microdisk Resonator on Silicon: Enabling High-Quality Ge(Sn) Materials for Micro- and Nanophotonics

Nano letters, 2014-01, Vol.14 (1), p.37-43

2014

Volltextzugriff (PDF)

Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11

Journal of applied physics, 2016-03, Vol.119 (9)

2016

Volltextzugriff (PDF)

Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing

Journal of crystal growth, 2013-02, Vol.365, p.29-34

2013

Volltextzugriff (PDF)

Dry-wet digital etching of Ge1−xSnx

Applied physics letters, 2016-02, Vol.108 (6)

2016

Volltextzugriff (PDF)

Record Effective Mobility Obtained From In0.53Ga0.47As/In0.52Al0.48As Quantum-Well MOSFETs on 300-mm Si Substrate

IEEE electron device letters, 2017-06, Vol.38 (6), p.724-727

2017

Volltextzugriff (PDF)

Chemically Homogeneous and Thermally Robust Ni1-xPtxSi Film Formed Under a Non-Equilibrium Melting/Quenching Condition

ACS applied materials & interfaces, 2017-01, Vol.9 (1), p.566-572

2017

Volltextzugriff (PDF)

Hole Mobility Enhancement in Compressively Strained pMOSFETs

IEEE electron device letters, 2013-07, Vol.34 (7), p.831-833

2013

Volltextzugriff (PDF)

Fabrication of \hbox\hbox/\hbox pMOSFETs Using Corrugated Substrates for Improved I and Reduced Layout-Width Dependence

IEEE transactions on electron devices, 2013-01, Vol.60 (1), p.153-158

2013

Volltextzugriff (PDF)

Deciphering the human microbiome using next-generation sequencing data and bioinformatics approaches

Methods (San Diego, Calif.), 2015-06, Vol.79-80, p.52-59

2015

Volltextzugriff (PDF)

pMOSFET with 200% mobility enhancement induced by multiple stressors

IEEE electron device letters, 2006-06, Vol.27 (6), p.511-513

2006

Volltextzugriff (PDF)

Highly Selective Dry Etching of Germanium over Germanium-Tin (Ge1―xSnx): A Novel Route for Ge1―xSnx Nanostructure Fabrication

Nano letters, 2013-08, Vol.13 (8), p.3783-3790

2013

Volltextzugriff (PDF)

Pan-genome analysis of Bacillus for microbiome profiling

Scientific reports, 2017-09, Vol.7 (1), p.10984-9, Article 10984

2017

Volltextzugriff (PDF)

Fabrication of GeSn-On-Insulator (GSOI) to enable monolithic 3D co-integration of logic and photonics

2013 Symposium on VLSI Technology, 2013, p.T32-T33

2013

Volltextzugriff (PDF)

Effect of Millisecond Annealing Temperature of Ni1-xPtx Si Formation on Leakage Current Characteristics of Static Random- Access Memory Cells

IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.389-394

2019

Volltextzugriff (PDF)

Effect of Millisecond Annealing Temperature of Ni1- x Pt x Si Formation on Leakage Current Characteristics of Static Random- Access Memory Cells

IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.389

2019

Volltextzugriff (PDF)

Effect of Millisecond Annealing Temperature of Ni 1- x Pt x Si Formation on Leakage Current Characteristics of Static Random- Access Memory Cells

IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.389-394

2019

Volltextzugriff (PDF)

A study of low energy phosphorus implantation and annealing in Si:C epitaxial films

Semiconductor science and technology, 2007-02, Vol.22 (2), p.171-174

2007

Volltextzugriff (PDF)

Pt-doped Ni-silicide films formed by pulsed-laser annealing: Microstructural evolution and thermally robust Ni1-xPtxSi2 formation

Journal of alloys and compounds, 2019-06, Vol.788, p.1013-1020

2019

Volltextzugriff (PDF)

Benefits of segmented Si/SiGe p-channel MOSFETs for analog/RF applications

2013 Symposium on VLSI Technology, 2013, p.T142-T143

2013

Volltextzugriff (PDF)

Fabrication of epitaxial SiGe optical waveguide structures

Applied surface science, 2004-03, Vol.224 (1), p.175-178

2004

Volltextzugriff (PDF)

Selective Epitaxial Si:P Film for nMOSFET Application: High Phosphorous Concentration and High Tensile Strain

ECS transactions, 2014, Vol.64 (6), p.959-965

2014

Volltextzugriff (PDF)

Segmented-channel Si1−xGex/Si pMOSFET for improved ION and reduced variability

2012 Symposium on VLSI Technology (VLSIT), 2012, p.167-168

2012

Volltextzugriff (PDF)

Observation of heterostructure epitaxy of Pt-doped Ni-monosilicide on Si(001)

Microelectronic engineering, 2019-01, Vol.205, p.14-19

2019

Volltextzugriff (PDF)

1 – 25 von 89

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(43)
Mit Volltextzugriff
(53)

Publikationsform

Sprache

Englisch
(89)

Erscheinungsjahr

n.n

Thema

Science & Technology
(33)
Technology
(26)
Physical Sciences
(23)
Materials Science
(18)
Physics
(16)
Silicon
(15)
Materials Science, Multidisciplinary
(14)
Physics, Applied
(14)
Engineering
(13)
Engineering, Electrical & Electronic
(12)
Annealing
(9)
Exact Sciences And Technology
(9)
Logic Gates
(7)
Physics, Condensed Matter
(7)
Science & Technology - Other Topics
(7)
Electrochemistry
(6)
Germanium
(6)
Mosfets
(6)
Nanoscience & Nanotechnology
(6)
Substrates
(6)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Hole Mobility Enhancement in Compressively Strained Ge0.93Sn0.07 pMOSFETs

Photosynthetic functions of Synechococcus in the ocean microbiomes of diverse salinity and seasons

Demonstration of a Ge/GeSn/Ge Quantum-Well Microdisk Resonator on Silicon: Enabling High-Quality Ge(Sn) Materials for Micro- and Nanophotonics

Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11

Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing

Dry-wet digital etching of Ge1−xSnx

Record Effective Mobility Obtained From In0.53Ga0.47As/In0.52Al0.48As Quantum-Well MOSFETs on 300-mm Si Substrate

Chemically Homogeneous and Thermally Robust Ni1-xPtxSi Film Formed Under a Non-Equilibrium Melting/Quenching Condition

Hole Mobility Enhancement in Compressively Strained pMOSFETs

Fabrication of \hbox\hbox/\hbox pMOSFETs Using Corrugated Substrates for Improved I and Reduced Layout-Width Dependence

Deciphering the human microbiome using next-generation sequencing data and bioinformatics approaches

pMOSFET with 200% mobility enhancement induced by multiple stressors

Highly Selective Dry Etching of Germanium over Germanium-Tin (Ge1―xSnx): A Novel Route for Ge1―xSnx Nanostructure Fabrication

Pan-genome analysis of Bacillus for microbiome profiling

Fabrication of GeSn-On-Insulator (GSOI) to enable monolithic 3D co-integration of logic and photonics

Effect of Millisecond Annealing Temperature of Ni1-xPtx Si Formation on Leakage Current Characteristics of Static Random- Access Memory Cells

Effect of Millisecond Annealing Temperature of Ni1- x Pt x Si Formation on Leakage Current Characteristics of Static Random- Access Memory Cells

Effect of Millisecond Annealing Temperature of Ni 1- x Pt x Si Formation on Leakage Current Characteristics of Static Random- Access Memory Cells

A study of low energy phosphorus implantation and annealing in Si:C epitaxial films

Pt-doped Ni-silicide films formed by pulsed-laser annealing: Microstructural evolution and thermally robust Ni1-xPtxSi2 formation

Benefits of segmented Si/SiGe p-channel MOSFETs for analog/RF applications

Fabrication of epitaxial SiGe optical waveguide structures

Selective Epitaxial Si:P Film for nMOSFET Application: High Phosphorous Concentration and High Tensile Strain

Segmented-channel Si1−xGex/Si pMOSFET for improved ION and reduced variability

Observation of heterostructure epitaxy of Pt-doped Ni-monosilicide on Si(001)

Suchergebnisse filtern