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Effect of Yttrium Treatment on Germanium-Oxide-Based Interfacial Layer of Ge P-Channel Metal-Oxide-Semiconductor Field-Effect Transistor Fabricated Through in Situ Plasma-Enhanced Atomic Layer Deposition

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.2030-2035

2024

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Improving Thermal Stability for Ge p-MOSFET of HfO2-Based Gate Stack With Ti-Doped Into Interfacial Layer by In-Situ Plasma-Enhanced Atomic Layer Deposition

IEEE electron device letters, 2021-08, Vol.42 (8), p.1109-1111

2021

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Experimental Realization of Thermal Stability Enhancement of Nickel Germanide Alloy by Using TiN Metal Capping

IEEE transactions on electron devices, 2017-05, Vol.64 (5), p.2314-2320

2017

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Demonstration of HfO2-Based Gate Dielectric With Low Interface State Density and Sub-nm EOT on Ge by Incorporating Ti Into Interfacial Layer

IEEE electron device letters, 2019-02, Vol.40 (2), p.174-176

2019

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Improving Thermal Stability and Interface State Density of High- \kappa Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium

IEEE electron device letters, 2016-11, Vol.37 (11), p.1379-1382

2016

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Experimental Realization of a Ternary-Phase Alloy Through Microwave-Activated Annealing for Ge Schottky pMOSFETs

IEEE transactions on electron devices, 2016-07, Vol.63 (7), p.2714-2721

2016

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First Experimental Demonstration and Mechanism of Abnormal Palladium Diffusion Induced by Excess Interstitial Ge

IEEE electron device letters, 2018-11, Vol.39 (11), p.1632-1635

2018

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High-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET With Low Thermal Budget Process

IEEE electron device letters, 2016-01, Vol.37 (1), p.8-11

2016

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Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel

Materials, 2015-11, Vol.8 (11), p.7519-7523

2015

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Silicon Heterojunction Solar Cells Using AlOx and Plasma-Immersion Ion Implantation

Energies (Basel), 2014-06, Vol.7 (6), p.3653-3663

2014

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Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2018-09, Vol.36 (5)

2018

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200mm GaN-on-Si E-Mode Power HEMTs with Epitaxially Grown p-AlN/p-GaN Gate to Enhance Gate Reliability

2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2024, p.319-322

2024

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The Epidemiology of Stevens-Johnson Syndrome and Toxic Epidermal Necrolysis in China

Journal of Immunology Research, 2018-01, Vol.2018 (2018), p.1-10

2018

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Improving Thermal Stability for Ge p-MOSFET of HfO 2 -Based Gate Stack With Ti-Doped Into Interfacial Layer by In-Situ Plasma-Enhanced Atomic Layer Deposition

IEEE electron device letters, 2021-08, Vol.42 (8), p.1109-1111

2021

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Influence of Ti doping on the band gap and thermal stability of ultrathin GeO x films

Journal of physics. D, Applied physics, 2021-08, Vol.54 (34), p.345102

2021

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Ultra-low Temperature Flexible Dye-Sensitized Solar Cell

2014 International Symposium on Computer, Consumer and Control, 2014, p.470-473

2014

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Create Living Context Map from Social Network

International Journal of Future Computer and Communication, 2018-12, Vol.7 (4), p.103-106

2018

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Demonstration of HfO 2 -Based Gate Dielectric With Low Interface State Density and Sub-nm EOT on Ge by Incorporating Ti Into Interfacial Layer

IEEE electron device letters, 2019-02, Vol.40 (2), p.174-176

2019

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Comparison of the Physical and Electrical Properties of HfO 2 /Al 2 O 3 /HfO 2 /GeO x /Ge and HfO 2 /Al 2 O 3 /GeO x /Ge Gate Stacks

Journal of nanoscience and nanotechnology, 2019-08, Vol.19 (8), p.4529-4534

2019

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Estimates of global seasonal influenza-associated respiratory mortality: a modelling study

The Lancet (British edition), 2018-03, Vol.391 (10127), p.1285-1300

2018

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Serum Urate Lowering with Allopurinol and Kidney Function in Type 1 Diabetes

The New England journal of medicine, 2020-06, Vol.382 (26), p.2493-2503

2020

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Epidemiology of sarcopenia among community-dwelling older adults in Taiwan: A pooled analysis for a broader adoption of sarcopenia assessments

Geriatrics & gerontology international, 2014-02, Vol.14 (S1), p.52-60

2014

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Integration of hetero-structure body-tied Ge FinFET using retrograde-well implantation

2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO), 2016, p.142-144

2016

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Incorporating Yttrium into a GeO Interfacial Layer with HfO 2 -Based Gate Stack on Ge

ECS journal of solid state science and technology, 2018, Vol.7 (2), p.N15-N19

2018

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Comparing Low- or Standard-Dose Alteplase in Endovascular Thrombectomy: Insights From a Nationwide Registry

Stroke (1970), 2024-03, Vol.55 (3), p.532-540

2024

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Effect of Yttrium Treatment on Germanium-Oxide-Based Interfacial Layer of Ge P-Channel Metal-Oxide-Semiconductor Field-Effect Transistor Fabricated Through in Situ Plasma-Enhanced Atomic Layer Deposition

Improving Thermal Stability for Ge p-MOSFET of HfO2-Based Gate Stack With Ti-Doped Into Interfacial Layer by In-Situ Plasma-Enhanced Atomic Layer Deposition

Experimental Realization of Thermal Stability Enhancement of Nickel Germanide Alloy by Using TiN Metal Capping

Demonstration of HfO2-Based Gate Dielectric With Low Interface State Density and Sub-nm EOT on Ge by Incorporating Ti Into Interfacial Layer

Improving Thermal Stability and Interface State Density of High- \kappa Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium

Experimental Realization of a Ternary-Phase Alloy Through Microwave-Activated Annealing for Ge Schottky pMOSFETs

First Experimental Demonstration and Mechanism of Abnormal Palladium Diffusion Induced by Excess Interstitial Ge

High-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET With Low Thermal Budget Process

Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel

Silicon Heterojunction Solar Cells Using AlOx and Plasma-Immersion Ion Implantation

Integration of microwave-annealed oxidation on germanium metal-oxide-semiconductor devices

200mm GaN-on-Si E-Mode Power HEMTs with Epitaxially Grown p-AlN/p-GaN Gate to Enhance Gate Reliability

The Epidemiology of Stevens-Johnson Syndrome and Toxic Epidermal Necrolysis in China

Improving Thermal Stability for Ge p-MOSFET of HfO 2 -Based Gate Stack With Ti-Doped Into Interfacial Layer by In-Situ Plasma-Enhanced Atomic Layer Deposition

Influence of Ti doping on the band gap and thermal stability of ultrathin GeO x films

Ultra-low Temperature Flexible Dye-Sensitized Solar Cell

Create Living Context Map from Social Network

Demonstration of HfO 2 -Based Gate Dielectric With Low Interface State Density and Sub-nm EOT on Ge by Incorporating Ti Into Interfacial Layer

Comparison of the Physical and Electrical Properties of HfO 2 /Al 2 O 3 /HfO 2 /GeO x /Ge and HfO 2 /Al 2 O 3 /GeO x /Ge Gate Stacks

Estimates of global seasonal influenza-associated respiratory mortality: a modelling study

Serum Urate Lowering with Allopurinol and Kidney Function in Type 1 Diabetes

Epidemiology of sarcopenia among community-dwelling older adults in Taiwan: A pooled analysis for a broader adoption of sarcopenia assessments

Integration of hetero-structure body-tied Ge FinFET using retrograde-well implantation

Incorporating Yttrium into a GeO Interfacial Layer with HfO 2 -Based Gate Stack on Ge

Comparing Low- or Standard-Dose Alteplase in Endovascular Thrombectomy: Insights From a Nationwide Registry

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