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Efficiency improvement analysis of nano-patterned sapphire substrates and semi-transparent superlattice contact layer in UVC light-emitting diodes

Applied physics letters, 2020-12, Vol.117 (26)

2020

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Transparent electrode design for AlGaN deep-ultraviolet light-emitting diodes

Optics express, 2017-12, Vol.25 (25), p.32206

2017

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Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes

Journal of applied physics, 2014-03, Vol.115 (11)

2014

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Efficiency enhancement in ultraviolet light-emitting diodes by manipulating polarization effect in electron blocking layer

Applied physics letters, 2013-04, Vol.102 (14)

2013

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The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

Applied physics letters, 2011-03, Vol.98 (12), p.121115-121115-3

2011

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High-quality AlGaN epitaxy on lattice-engineerable AlN template for high-power UVC light-emitting diodes

Acta materialia, 2022-03, Vol.226, p.117625, Article 117625

2022

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Improved Performance of InGaN/GaN Light-Emitting Diodes With Thin Intermediate Barriers

IEEE photonics technology letters, 2011-11, Vol.23 (22), p.1682-1684

2011

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Study of InGaN-Based Light-Emitting Diodes on a Roughened Backside GaN Substrate by a Chemical Wet-Etching Process

IEEE photonics technology letters, 2011-10, Vol.23 (19), p.1373-1375

2011

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Investigation of the Ti/Al/Pt/Au and Ti/Au contact materials on the N-face surface of oxygen doped GaN

Physica status solidi. C, 2014-02, Vol.11 (3-4), p.957-960

2014

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Investigation of lattice-modulated AlInGaN as a barrier layer in near-ultraviolet light-emitting diodes by numerical analysis and fabrication

Japanese Journal of Applied Physics, 2014-05, Vol.53 (5), p.52101-1-052101-6

2014

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Optical Simulation and Fabrication of Near-Ultraviolet LEDs on a Roughened Backside GaN Substrate

IEEE photonics technology letters, 2012-03, Vol.24 (6), p.488-490

2012

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Suppression of Nonradiation Recombination by Selected Si Doping in AlGaN Barriers for Ultraviolet Light-Emitting Diodes

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JL15-08JL15-4

2013

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Overcoming the excessive compressive strain in AlGaN epitaxy by introducing high Si-doping in AlN templates

Japanese Journal of Applied Physics, 2020-07, Vol.59 (7), p.70904

2020

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Light Improvement of Near Ultraviolet Light-Emitting Diodes by Utilizing Lattice-Matched InAlGaN as Barrier Layers in Active Region

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JL17-08JL17-3

2013

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Effect of AlGaN Si-Doped Barrier Layer on Optical Properties of Ultraviolet Light-Emitting Diodes

Japanese Journal of Applied Physics, 2013-01, Vol.52 (1), p.01AG04-01AG04-4

2013

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Higher output power of near-ultraviolet LED grown on GaN substrate with back-side etching

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.761-764

2012

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Improving the light output power of DUV-LED by introducing an intrinsic last quantum barrier interlayer on the high-quality AlN template

Solid-state electronics, 2017-12, Vol.138, p.84-88

2017

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Microstructures, electrical and magnetic properties of (Ga, Co)-ZnO films by radio frequency magnetron co-sputtering

Surface & coatings technology, 2016-10, Vol.303, p.203-208

2016

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Nitride-Based Blue Light-Emitting Diodes Grown With InN/GaN Matrix Quantum Wells

IEEE journal of quantum electronics, 2014-04, Vol.50 (4), p.255-260

2014

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Robust Edge Coupling Probe Applied in Wafer-Level Optical Testing

2023 IEEE 73rd Electronic Components and Technology Conference (ECTC), 2023, p.1754-1759

2023

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CMOS-compatible GaN HEMT on 200mm Si-substrate for RF application

2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2021, p.1-2

2021

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High efficiency and output power of near-ultraviolet light-emitting diodes grown on GaN substrate with back-side etching

Physica scripta, 2012-04, Vol.85 (4), p.45703-4

2012

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GaN on Si RF performance with different AlGaN back barrier

2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT), 2023, p.1-2

2023

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Four-Wavelengths-Mixed White Light Emitting Diodes with Dual-Wavelength-Pumped Green and Red Phosphors

Japanese Journal of Applied Physics, 2008-08, Vol.47 (8R), p.6317

2008

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Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JK05-08JK05-4

2013

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Efficiency improvement analysis of nano-patterned sapphire substrates and semi-transparent superlattice contact layer in UVC light-emitting diodes

Transparent electrode design for AlGaN deep-ultraviolet light-emitting diodes

Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes

Efficiency enhancement in ultraviolet light-emitting diodes by manipulating polarization effect in electron blocking layer

The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

High-quality AlGaN epitaxy on lattice-engineerable AlN template for high-power UVC light-emitting diodes

Improved Performance of InGaN/GaN Light-Emitting Diodes With Thin Intermediate Barriers

Study of InGaN-Based Light-Emitting Diodes on a Roughened Backside GaN Substrate by a Chemical Wet-Etching Process

Investigation of the Ti/Al/Pt/Au and Ti/Au contact materials on the N-face surface of oxygen doped GaN

Investigation of lattice-modulated AlInGaN as a barrier layer in near-ultraviolet light-emitting diodes by numerical analysis and fabrication

Optical Simulation and Fabrication of Near-Ultraviolet LEDs on a Roughened Backside GaN Substrate

Suppression of Nonradiation Recombination by Selected Si Doping in AlGaN Barriers for Ultraviolet Light-Emitting Diodes

Overcoming the excessive compressive strain in AlGaN epitaxy by introducing high Si-doping in AlN templates

Light Improvement of Near Ultraviolet Light-Emitting Diodes by Utilizing Lattice-Matched InAlGaN as Barrier Layers in Active Region

Effect of AlGaN Si-Doped Barrier Layer on Optical Properties of Ultraviolet Light-Emitting Diodes

Higher output power of near-ultraviolet LED grown on GaN substrate with back-side etching

Improving the light output power of DUV-LED by introducing an intrinsic last quantum barrier interlayer on the high-quality AlN template

Microstructures, electrical and magnetic properties of (Ga, Co)-ZnO films by radio frequency magnetron co-sputtering

Nitride-Based Blue Light-Emitting Diodes Grown With InN/GaN Matrix Quantum Wells

Robust Edge Coupling Probe Applied in Wafer-Level Optical Testing

CMOS-compatible GaN HEMT on 200mm Si-substrate for RF application

High efficiency and output power of near-ultraviolet light-emitting diodes grown on GaN substrate with back-side etching

GaN on Si RF performance with different AlGaN back barrier

Four-Wavelengths-Mixed White Light Emitting Diodes with Dual-Wavelength-Pumped Green and Red Phosphors

Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer

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