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Coherent phonon manipulation in coupled mechanical resonators

Nature physics, 2013-08, Vol.9 (8), p.480-484

2013

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A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer

Materials, 2022-01, Vol.15 (3), p.703

2022

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Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

IEEE transactions on electron devices, 2023-03, Vol.70 (3), p.1-6

2023

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Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications

Materials, 2021-11, Vol.14 (21), p.6558

2021

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Monolithic 3D CMOS Using Layered Semiconductors

Advanced materials (Weinheim), 2016-04, Vol.28 (13), p.2547-2554

2016

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Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate

Materials, 2023-04, Vol.16 (9), p.3376

2023

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Demonstration of Highly Robust 5 nm Hf0.5Zr0.5O₂ Ultra-Thin Ferroelectric Capacitor by Improving Interface Quality

IEEE electron device letters, 2021-09, Vol.42 (9), p.1299-1302

2021

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Resonant Mechanism for a Long-Distance Wireless Power Transfer Using Class E PA and GaN HEMT

Energies (Basel), 2023-04, Vol.16 (9), p.3657

2023

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RF loss mechanisms in GaN‐based high‐electron‐mobility‐transistor on silicon: Role of an inversion channel at the AlN/Si interface

Physica status solidi. A, Applications and materials science, 2017-07, Vol.214 (7), p.n/a

2017

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Discontinuous Current Mode Modeling and Zero Current Switching of Flyback Converter

Energies (Basel), 2021-09, Vol.14 (18), p.5996

2021

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Power Receiving Unit for High-Power Resonant Wireless Power Transfer

Energies (Basel), 2023-12, Vol.16 (23), p.7856

2023

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Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer

IEEE electron device letters, 2014-07, Vol.35 (7), p.732-734

2014

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Comparisons on Different Innovative Cascode GaN HEMT E-Mode Power Modules and Their Efficiencies on the Flyback Converter

Energies (Basel), 2021-09, Vol.14 (18), p.5966

2021

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Variable-Frequency Pulse Width Modulation Circuits for Resonant Wireless Power Transfer

Energies (Basel), 2021-06, Vol.14 (12), p.3656

2021

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Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications

Micromachines (Basel), 2024-01, Vol.15 (1), p.81

2024

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Facile synthesis of hierarchical gold nanostructures and their catalytic application

Nanotechnology, 2016-08, Vol.27 (32), p.325602

2016

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A Turn-Ratio-Changing Half-Bridge CLLC DC–DC Bidirectional Battery Charger Using a GaN HEMT

Energies (Basel), 2023-08, Vol.16 (16), p.5928

2023

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Flyback Converter Using a D-Mode GaN HEMT Synchronous Rectifier

Energies (Basel), 2022-05, Vol.15 (9), p.3197

2022

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Optimization of Forward and Reverse Electrical Characteristics of GaN-on-Si Schottky Barrier Diode Through Ladder-Shaped Hybrid Anode Engineering

IEEE transactions on electron devices, 2022-12, Vol.69 (12), p.1-6

2022

Volltextzugriff (PDF)

Dynamic on‐state resistance instability characterization of a multi‐chip‐GaN MIS‐HEMTs cascode power module

Electronics letters, 2023-07, Vol.59 (13), p.n/a

2023

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Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications

Micromachines (Basel), 2023-04, Vol.14 (5), p.931

2023

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Effects of the growth temperature on structural and electrical properties of AlN/GaN heterostructures grown by metal organic chemical vapor deposition

Thin solid films, 2020-09, Vol.709, p.138228, Article 138228

2020

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The Effect of Fluorine Doping in the Charge Trapping Layer on Device Characteristics and Reliability of E-Mode GaN MIS-HEMTs

IEEE transactions on electron devices, 2024-06, Vol.71 (6), p.3603-3608

2024

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High-Temperature TDDB Investigation on High Performance-Centered Hybrid HZO/HfON/Al2O3, Ferro-Electric Charge-Trap (FEG) GaN-HEMT

IEEE transactions on electron devices, 2023-09, Vol.70 (9), p.1-7

2023

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Reliability Characterization of Gallium Nitride MIS-HEMT Based Cascode Devices for Power Electronic Applications

Energies (Basel), 2020-05, Vol.13 (10), p.2628

2020

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Coherent phonon manipulation in coupled mechanical resonators

A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer

Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition

Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications

Monolithic 3D CMOS Using Layered Semiconductors

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate

Demonstration of Highly Robust 5 nm Hf0.5Zr0.5O₂ Ultra-Thin Ferroelectric Capacitor by Improving Interface Quality

Resonant Mechanism for a Long-Distance Wireless Power Transfer Using Class E PA and GaN HEMT

RF loss mechanisms in GaN‐based high‐electron‐mobility‐transistor on silicon: Role of an inversion channel at the AlN/Si interface

Discontinuous Current Mode Modeling and Zero Current Switching of Flyback Converter

Power Receiving Unit for High-Power Resonant Wireless Power Transfer

Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer

Comparisons on Different Innovative Cascode GaN HEMT E-Mode Power Modules and Their Efficiencies on the Flyback Converter

Variable-Frequency Pulse Width Modulation Circuits for Resonant Wireless Power Transfer

Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications

Facile synthesis of hierarchical gold nanostructures and their catalytic application

A Turn-Ratio-Changing Half-Bridge CLLC DC–DC Bidirectional Battery Charger Using a GaN HEMT

Flyback Converter Using a D-Mode GaN HEMT Synchronous Rectifier

Optimization of Forward and Reverse Electrical Characteristics of GaN-on-Si Schottky Barrier Diode Through Ladder-Shaped Hybrid Anode Engineering

Dynamic on‐state resistance instability characterization of a multi‐chip‐GaN MIS‐HEMTs cascode power module

Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications

Effects of the growth temperature on structural and electrical properties of AlN/GaN heterostructures grown by metal organic chemical vapor deposition

The Effect of Fluorine Doping in the Charge Trapping Layer on Device Characteristics and Reliability of E-Mode GaN MIS-HEMTs

High-Temperature TDDB Investigation on High Performance-Centered Hybrid HZO/HfON/Al2O3, Ferro-Electric Charge-Trap (FEG) GaN-HEMT

Reliability Characterization of Gallium Nitride MIS-HEMT Based Cascode Devices for Power Electronic Applications

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