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Vesicle-associated membrane proteins 721 and 722 are required for unimpeded growth of Arabidopsis under ABA application

Journal of plant physiology, 2013-03, Vol.170 (5), p.529-533

2013

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Experimental Realization of Tunable Metamaterial Hyper-transmitter

Scientific reports, 2016-09, Vol.6 (1), p.33416-33416, Article 33416

2016

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In-plane propagation of electromagnetic waves in planar metamaterials

Journal of the Korean Physical Society, 2016, 69(3), , pp.448-451

2016

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Determination of the magnetic ground states in Ce N M Sb 2 compounds with N M = Cu , Ag, Au

Physical review. B, 2024-02, Vol.109 (5), Article 054431

2024

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Band discontinuity measurements of the wafer bonded InGaAs∕Si heterojunction

Applied physics letters, 2007-05, Vol.90 (22)

2007

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Role of Wood's anomaly in the performance of metamaterial absorbers with periodicity comparable to wavelength

Journal of physics. D, Applied physics, 2016-05, Vol.49 (19), p.195103-195109

2016

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Central spot formed in dried coffee-water-mixture droplets: Inverse coffee-ring effect

Current Applied Physics, 2018, 18(4), , pp.477-483

2018

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Analysis of a systematic error appearing as a periodic fluctuation in the frequency-domain absorption spectra of metamaterial absorbers

Optics express, 2017-06, Vol.25 (12), p.13296-13304

2017

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Si/Ge nanodot superlattices for Si-based photovoltaics

Proceedings of the IEEE SoutheastCon 2010 (SoutheastCon), 2010, p.404-407

2010

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Inas-based p-n homojunction diodes : Doping effects and impact of doping on device parameters

Journal of electronic materials, 2006-09, Vol.35 (9), p.1712-1714

2006

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Control of dopant incorporation in InAs/GaAs quantum dots for infrared photodetection with low dark current

2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, 2006, p.1-2

2006

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Model for regulation of VAMP721/722-mediated secretion: growth vs. stress responses

Plant signaling & behavior, 2013-11, Vol.8 (11), p.e27116-e27116

2013

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Requirement of vesicle-associated membrane protein 721 and 722 for sustained growth during immune responses in Arabidopsis

Molecules and Cells, 2013, 35(6), , pp.481-488

2013

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Doping Effect on Carrier Occupation and Transport in InAs/GaAs Quantum Dot Infrared Photodetectors: A Capacitance-Voltage Spectroscopy Study

2007 Conference on Lasers and Electro-Optics (CLEO), 2007, p.1-2

2007

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Erratum: "Band discontinuity measurements of the wafer bonded InGaAs/Si heterojunction" [Appl. Phys. Lett. 90, 222111 (2007)]

Applied physics letters, 2012-03, Vol.100 (12), p.129901-129901-1

2012

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Band discontinuity measurements of the wafer bonded In Ga As ∕ Si heterojunction

Applied physics letters, 2007-05, Vol.90 (22), p.222111-222111-3

2007

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Alternative substrates for InP and related materials

International Conference onIndium Phosphide and Related Materials, 2003, 2003, p.562

2003

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Modification of 4H-SiC and 6H-SiC(0001)Si surfaces through the interaction with atomic hydrogen and nitrogen

Journal of electronic materials, 2005-04, Vol.34 (4), p.457-465

2005

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Doping effect on carrier occupation and transport in InAs/GaAs quantum dot infrared photodetectors: A capacitance-voltage spectroscopy study

2007 Quantum Electronics and Laser Science Conference, 2007, p.1-2

2007

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Interfacial reactions during GaN and AiN epitaxy on 4H-and 6H-SiC(0001)

Applied physics letters, 2005-01, Vol.86 (2), p.021920-021920-3

2005

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The effect of strained Al sub(0.7)In sub(0.3)As emitter layers on abrupt N-p super(+) AlInAs-GaInAs heterojunction diodes and heterojunction bipolar transistors

Journal of electronic materials, 2002-08, Vol.31 (8), p.841-847

2002

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The effect of strained Al0.7In0.3As emitter layers on abrupt N-p+ AllnAs-GaInAs heterojunction diodes and heterojunction bipolar transistors

Journal of electronic materials, 2002-08, Vol.31 (8), p.841-847

2002

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The effect of strained AI(0.7)In(0.3)As emitter layers on abrupt N-p(+) AIInnAs-GaInAs heterojunction diodes and heterojunction bipolar transistors

Journal of electronic materials, 2002-08, Vol.31 (8), p.841

2002

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Modification of 4H-SiC and 6H-SiC(0001)s, Surfaces through the Interaction with Atomic Hydrogen and Nitrogen

Journal of electronic materials, 2005-04, Vol.34 (4), p.457-465

2005

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Modification of 4H-SiC and 6H-SiC(0001)Si surfaces through the interaction with atomic hydrogen and nitrogen: Special issue on SiC and the group III nitride semiconductors

Journal of electronic materials, 2005, Vol.34 (4), p.457-465

2005

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Vesicle-associated membrane proteins 721 and 722 are required for unimpeded growth of Arabidopsis under ABA application

Experimental Realization of Tunable Metamaterial Hyper-transmitter

In-plane propagation of electromagnetic waves in planar metamaterials

Determination of the magnetic ground states in Ce N M Sb 2 compounds with N M = Cu , Ag, Au

Band discontinuity measurements of the wafer bonded InGaAs∕Si heterojunction

Role of Wood's anomaly in the performance of metamaterial absorbers with periodicity comparable to wavelength

Central spot formed in dried coffee-water-mixture droplets: Inverse coffee-ring effect

Analysis of a systematic error appearing as a periodic fluctuation in the frequency-domain absorption spectra of metamaterial absorbers

Si/Ge nanodot superlattices for Si-based photovoltaics

Inas-based p-n homojunction diodes : Doping effects and impact of doping on device parameters

Control of dopant incorporation in InAs/GaAs quantum dots for infrared photodetection with low dark current

Model for regulation of VAMP721/722-mediated secretion: growth vs. stress responses

Requirement of vesicle-associated membrane protein 721 and 722 for sustained growth during immune responses in Arabidopsis

Doping Effect on Carrier Occupation and Transport in InAs/GaAs Quantum Dot Infrared Photodetectors: A Capacitance-Voltage Spectroscopy Study

Erratum: "Band discontinuity measurements of the wafer bonded InGaAs/Si heterojunction" [Appl. Phys. Lett. 90, 222111 (2007)]

Band discontinuity measurements of the wafer bonded In Ga As ∕ Si heterojunction

Alternative substrates for InP and related materials

Modification of 4H-SiC and 6H-SiC(0001)Si surfaces through the interaction with atomic hydrogen and nitrogen

Doping effect on carrier occupation and transport in InAs/GaAs quantum dot infrared photodetectors: A capacitance-voltage spectroscopy study

Interfacial reactions during GaN and AiN epitaxy on 4H-and 6H-SiC(0001)

The effect of strained Al sub(0.7)In sub(0.3)As emitter layers on abrupt N-p super(+) AlInAs-GaInAs heterojunction diodes and heterojunction bipolar transistors

The effect of strained Al0.7In0.3As emitter layers on abrupt N-p+ AllnAs-GaInAs heterojunction diodes and heterojunction bipolar transistors

The effect of strained AI(0.7)In(0.3)As emitter layers on abrupt N-p(+) AIInnAs-GaInAs heterojunction diodes and heterojunction bipolar transistors

Modification of 4H-SiC and 6H-SiC(0001)s, Surfaces through the Interaction with Atomic Hydrogen and Nitrogen

Modification of 4H-SiC and 6H-SiC(0001)Si surfaces through the interaction with atomic hydrogen and nitrogen: Special issue on SiC and the group III nitride semiconductors

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