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Modification of Schottky barrier properties of Au/n-type Ge Schottky barrier diode using monolayer graphene interlayer

Journal of alloys and compounds, 2014-11, Vol.614, p.323-329

2014

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The Low Temperature Epitaxy of Strained GeSn Layers Using RTCVD System

Electronic Materials Letters, 2018, 14(2), , pp.207-213

2018

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Electrical Properties and Current Transport Mechanisms of the Au/n-GaN Schottky Structure with Solution- Processed High-k BaTiO3 Interlayer

Journal of electronic materials, 2014-09, Vol.43 (9), p.3499-3507

2014

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Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2015, 15(1), 61, pp.7-15

2015

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Temperature dependence of the photocurrent in Ge1−xSnx layers

Journal of the Korean Physical Society, 2016, 69(2), , pp.207-212

2016

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Characterization of n-Ge/i-Ge/p-Si PIN photo-diode

Materials science in semiconductor processing, 2014-06, Vol.22, p.37-43

2014

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Growth of a Ge layer on 8 in. Si (100) substrates by rapid thermal chemical vapor deposition

Materials science in semiconductor processing, 2014-05, Vol.21, p.58-65

2014

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Selective Chemical Wet Etching of Si0.8Ge0.2/Si Multilayer

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2013, 13(6), 54, pp.668-675

2013

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The low temperature epitaxy of Ge on Si (100) substrate using two different precursors of GeH4 and Ge2H6

Solid-state electronics, 2016-10, Vol.124, p.35-41

2016

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Effect of Sn Composition in Ge1−xSnx Layers Grown by Using Rapid Thermal Chemical Vapor Deposition

Journal of the Korean Physical Society, 2018, 72(9), , pp.1063-1068

2018

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Abnormal Dopant Distribution in POCl3-Diffused N+ Emitter of Textured Silicon Solar Cells

IEEE electron device letters, 2011-03, Vol.32 (3), p.351-353

2011

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Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier diode

Superlattices and microstructures, 2016-03, Vol.91, p.306-312

2016

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A comparative study of IR Ge photodiodes with a Schottky barrier contact and metal-semiconductor-metal structure

Journal of the Korean Physical Society, 2014, 65(12), , pp.2100-2106

2014

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Fabrication of PIN photo-diode from p-Ge/i-Ge/n-Si hetero junction structure

Materials science in semiconductor processing, 2014-01, Vol.17, p.74-80

2014

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Characterization of n-type Ge layers on Si (100) substrates grown by rapid thermal chemical vapor deposition

Materials science in semiconductor processing, 2013-12, Vol.16 (6), p.1405-1409

2013

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Abnormal Dopant Distribution in \hbox -Diffused \hbox^ Emitter of Textured Silicon Solar Cells

IEEE electron device letters, 2011-03, Vol.32 (3), p.351-353

2011

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Electroluminescence of n-Ge/i-Ge/p-Si heterojunction PIN LEDs

Journal of the Korean Physical Society, 2014, 64(10), , pp.1430-1436

2014

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Optical properties of hybrid Si1−xGex/Si quantum dot/quantum well structures grown on Si by RPCVD

Materials science in semiconductor processing, 2014-01, Vol.17, p.178-183

2014

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Electroluminescence of p-Ge/i-Ge/n-Si heterojunction PIN LEDs

Journal of the Korean Physical Society, 2014, 64(1), , pp.98-103

2014

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Effect of phosphorus doping concentration on n-type Ge layer growth

Journal of the Korean Physical Society, 2014, 64(5), , pp.715-721

2014

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Correlation of reverse leakage current conduction mechanism and electrostatic discharge robustness of transient voltage suppression diode

Electronic Materials Letters, 2014, 10(5), , pp.893-898

2014

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Doping-concentration dependence of a boron-doped p-type Ge layer grown on a Si (100) substrates by using RTCVD

Journal of the Korean Physical Society, 2014, 64(3), , pp.443-450

2014

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Optical characterization of tensile-strained a p-type Ge layer on a Si (100) substrate

Journal of the Korean Physical Society, 2013, 63(5), , pp.1034-1039

2013

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Growth and characterization of Si1−xGetx QDs on Si/Si0.8Ge0.2 layer

Electronic materials letters, 2012-12, Vol.8 (6), p.559-563

2012

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Two-dimensional dopant profiling in p+/n junctions using scanning electron microscope coupled with selective electrochemical etching

Electronic Materials Letters, 2010, 6(2), , pp.55-58

2010

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Modification of Schottky barrier properties of Au/n-type Ge Schottky barrier diode using monolayer graphene interlayer

The Low Temperature Epitaxy of Strained GeSn Layers Using RTCVD System

Electrical Properties and Current Transport Mechanisms of the Au/n-GaN Schottky Structure with Solution- Processed High-k BaTiO3 Interlayer

Temperature Dependent Current Transport Mechanism in Graphene/Germanium Schottky Barrier Diode

Temperature dependence of the photocurrent in Ge1−xSnx layers

Characterization of n-Ge/i-Ge/p-Si PIN photo-diode

Growth of a Ge layer on 8 in. Si (100) substrates by rapid thermal chemical vapor deposition

Selective Chemical Wet Etching of Si0.8Ge0.2/Si Multilayer

The low temperature epitaxy of Ge on Si (100) substrate using two different precursors of GeH4 and Ge2H6

Effect of Sn Composition in Ge1−xSnx Layers Grown by Using Rapid Thermal Chemical Vapor Deposition

Abnormal Dopant Distribution in POCl3-Diffused N+ Emitter of Textured Silicon Solar Cells

Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier diode

A comparative study of IR Ge photodiodes with a Schottky barrier contact and metal-semiconductor-metal structure

Fabrication of PIN photo-diode from p-Ge/i-Ge/n-Si hetero junction structure

Characterization of n-type Ge layers on Si (100) substrates grown by rapid thermal chemical vapor deposition

Abnormal Dopant Distribution in \hbox -Diffused \hbox^ Emitter of Textured Silicon Solar Cells

Electroluminescence of n-Ge/i-Ge/p-Si heterojunction PIN LEDs

Optical properties of hybrid Si1−xGex/Si quantum dot/quantum well structures grown on Si by RPCVD

Electroluminescence of p-Ge/i-Ge/n-Si heterojunction PIN LEDs

Effect of phosphorus doping concentration on n-type Ge layer growth

Correlation of reverse leakage current conduction mechanism and electrostatic discharge robustness of transient voltage suppression diode

Doping-concentration dependence of a boron-doped p-type Ge layer grown on a Si (100) substrates by using RTCVD

Optical characterization of tensile-strained a p-type Ge layer on a Si (100) substrate

Growth and characterization of Si1−xGetx QDs on Si/Si0.8Ge0.2 layer

Two-dimensional dopant profiling in p+/n junctions using scanning electron microscope coupled with selective electrochemical etching

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