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Freestanding graphene writing on a silicon carbide wafer

Current Applied Physics, 2020, 20(12), , pp.1435-1440

2020

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Effect of oxide films, inclusions and Fe on reproducibility of tensile properties in cast Al–Si–Mg alloys: Statistical and image analysis

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 2012-12, Vol.558, p.134-143

2012

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Atomic layer etching of Al2O3 using BCl3/Ar for the interface passivation layer of III–V MOS devices

Microelectronic engineering, 2013-10, Vol.110, p.457-460

2013

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Characteristics of SiO2 etching by using pulse-time modulation in 60 MHz/2 MHz dual-frequency capacitive coupled plasma

Current Applied Physics, 2013, 13(8), , pp.1830-1836

2013

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Interfacial electronic structure of molybdenum oxide on the fullerene layer, a potential hole-injecting layer in inverted top-emitting organic light-emitting diodes

Current Applied Physics, 2013, 13(6), , pp.1037-1041

2013

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Characteristics of SiOx thin films deposited by atmospheric pressure chemical vapor deposition as a function of HMDS/O2 flow rate

Thin solid films, 2010-09, Vol.518 (22), p.6403-6407

2010

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White top-emitting organic light-emitting diodes using one-emissive layer of the DCJTB doped DPVBi layer

Thin solid films, 2008-04, Vol.516 (11), p.3590-3594

2008

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Atmospheric pressure PECVD of SiO2 thin film at a low temperature using HMDS/O2/He/Ar

Thin solid films, 2009-05, Vol.517 (14), p.4065-4069

2009

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Top-emitting organic light-emitting diode using transparent conducting indium oxide layer fabricated by a two-step ion beam-assisted deposition

Surface & coatings technology, 2007-02, Vol.201 (9), p.5358-5362

2007

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A study of transparent indium tin oxide (ITO) contact to p-GaN

Thin solid films, 2001-11, Vol.398, p.87-92

2001

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Effect of the surface texturing shapes fabricated using dry etching on the extraction efficiency of vertical light-emitting diodes

Solid-state electronics, 2008-08, Vol.52 (8), p.1193-1196

2008

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The study of atmospheric pressure plasma for surface cleaning

Surface & coatings technology, 2003-07, Vol.171 (1-3), p.237-240

2003

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White organic light-emitting diodes from three emitter layers

Thin solid films, 2006-11, Vol.515 (3), p.891-895

2006

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Four-wavelength white organic light-emitting diodes using 4,4′-bis-[carbazoyl-(9)]-stilbene as a deep blue emissive layer

Organic electronics, 2007-12, Vol.8 (6), p.683-689

2007

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Characteristics of SiOxNy films deposited by inductively coupled plasma enhanced chemical vapor deposition using HMDS/NH3/O2/Ar for water vapor diffusion barrier

Thin solid films, 2006-11, Vol.515 (3), p.917-921

2006

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Fabrication of SiC micro-lens by plasma etching

Thin solid films, 2005-03, Vol.475 (1-2), p.318-322

2005

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High rate sapphire (Al 2O 3) etching in inductively coupled plasmas using axial external magnetic field

Thin solid films, 2003-07, Vol.435 (1), p.242-246

2003

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Development of a low angle forward reflected neutral oxygen beam for materials processing

Thin solid films, 2001-11, Vol.398, p.647-651

2001

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High rate etching of 6H–SiC in SF6-based magnetically-enhanced inductively coupled plasmas

Thin solid films, 2004-01, Vol.447-448, p.100-104

2004

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The effect of solution treatment time on the tensile deformation characteristics of naturally-aged A383 alloy die castings

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 2018-07, Vol.731, p.80-84

2018

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Measurement of nc-Si:H film uniformity and diagnosis of plasma spatial structure produced by a very high frequency, differentially powered, multi-tile plasma source

Vacuum, 2015-09, Vol.119, p.34-46

2015

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Properties of SiO N thin film deposited by low temperature plasma enhanced chemical vapor deposition using TEOS–NH3–O2–N2 gas mixtures

Surface & coatings technology, 2005-10, Vol.200 (1-4), p.680-685

2005

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Characteristics of neutral beam generated by reflection on a planar-type reflector and its etching properties

Surface & coatings technology, 2004-01, Vol.177, p.420-425

2004

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Dry etching characteristics of ITO thin films deposited on plastic substrates

Thin solid films, 2001-02, Vol.383 (1-2), p.281-283

2001

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Effect of N-containing additive gases on global warming gas emission during remote plasma cleaning process of silicon nitride PECVD chamber using C4F8/O2/Ar chemistry

Surface & coatings technology, 2003-07, Vol.171 (1-3), p.267-272

2003

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Freestanding graphene writing on a silicon carbide wafer

Effect of oxide films, inclusions and Fe on reproducibility of tensile properties in cast Al–Si–Mg alloys: Statistical and image analysis

Atomic layer etching of Al2O3 using BCl3/Ar for the interface passivation layer of III–V MOS devices

Characteristics of SiO2 etching by using pulse-time modulation in 60 MHz/2 MHz dual-frequency capacitive coupled plasma

Interfacial electronic structure of molybdenum oxide on the fullerene layer, a potential hole-injecting layer in inverted top-emitting organic light-emitting diodes

Characteristics of SiOx thin films deposited by atmospheric pressure chemical vapor deposition as a function of HMDS/O2 flow rate

White top-emitting organic light-emitting diodes using one-emissive layer of the DCJTB doped DPVBi layer

Atmospheric pressure PECVD of SiO2 thin film at a low temperature using HMDS/O2/He/Ar

Top-emitting organic light-emitting diode using transparent conducting indium oxide layer fabricated by a two-step ion beam-assisted deposition

A study of transparent indium tin oxide (ITO) contact to p-GaN

Effect of the surface texturing shapes fabricated using dry etching on the extraction efficiency of vertical light-emitting diodes

The study of atmospheric pressure plasma for surface cleaning

White organic light-emitting diodes from three emitter layers

Four-wavelength white organic light-emitting diodes using 4,4′-bis-[carbazoyl-(9)]-stilbene as a deep blue emissive layer

Characteristics of SiOxNy films deposited by inductively coupled plasma enhanced chemical vapor deposition using HMDS/NH3/O2/Ar for water vapor diffusion barrier

Fabrication of SiC micro-lens by plasma etching

High rate sapphire (Al 2O 3) etching in inductively coupled plasmas using axial external magnetic field

Development of a low angle forward reflected neutral oxygen beam for materials processing

High rate etching of 6H–SiC in SF6-based magnetically-enhanced inductively coupled plasmas

The effect of solution treatment time on the tensile deformation characteristics of naturally-aged A383 alloy die castings

Measurement of nc-Si:H film uniformity and diagnosis of plasma spatial structure produced by a very high frequency, differentially powered, multi-tile plasma source

Properties of SiO N thin film deposited by low temperature plasma enhanced chemical vapor deposition using TEOS–NH3–O2–N2 gas mixtures

Characteristics of neutral beam generated by reflection on a planar-type reflector and its etching properties

Dry etching characteristics of ITO thin films deposited on plastic substrates

Effect of N-containing additive gases on global warming gas emission during remote plasma cleaning process of silicon nitride PECVD chamber using C4F8/O2/Ar chemistry

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