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A study on the entrainment and mixing process in the continental stratocumulus clouds measured during the RACORO campaign

Atmospheric research, 2017-09, Vol.194, p.89-99

2017

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A 2.8 kV Breakdown Voltage α-Ga2O3 MOSFET with Hybrid Schottky Drain Contact

Micromachines (Basel), 2024-01, Vol.15 (1), p.133

2024

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Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO2 Gate Dielectric

Micromachines (Basel), 2021-11, Vol.12 (12), p.1441

2021

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Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors

Communications engineering, 2024-01, Vol.3 (1), p.15-7, Article 15

2024

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Influence of Quasi-Periodic Oscillation of Atmospheric Variables on Radiation Fog over A Mountainous Region of Korea

Atmosphere, 2020-03, Vol.11 (3), p.230

2020

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Design of p‐WSe2/n‐Ge Heterojunctions for High‐Speed Broadband Photodetectors

Advanced functional materials, 2022-01, Vol.32 (4), p.n/a

2022

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Influence of Entrainment on Centimeter-Scale Cloud Microphysics in Marine Stratocumulus Clouds Observed during CSET

Journal of the atmospheric sciences, 2022-11, Vol.79 (11), p.2935-2948

2022

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Reconfigurable Physical Reservoir in GaN/α-In2Se3 HEMTs Enabled by Out-of-Plane Local Polarization of Ferroelectric 2D Layer

ACS nano, 2023-04, Vol.17 (8), p.7695-7704

2023

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Cloud microphysical relationships and their implication on entrainment and mixing mechanism for the stratocumulus clouds measured during the VOCALS project

Journal of geophysical research. Atmospheres, 2015-05, Vol.120 (10), p.5047-5069

2015

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High‐resolution measurements of microphysics and entrainment in marine stratocumulus clouds

Quarterly journal of the Royal Meteorological Society, 2023-10

2023

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High-resolution measurements of microphysics and entrainment in marine stratocumulus clouds

Quarterly journal of the Royal Meteorological Society, 2023-10, Vol.150 (758)

2023

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Cloud microphysical response to entrainment and mixing is locally inhomogeneous and globally homogeneous: Evidence from the lab

Proceedings of the National Academy of Sciences - PNAS, 2023-10, Vol.120 (42), p.e2307354120-e2307354120

2023

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Pulsed E-/D-mode switchable GaN HEMTs with a ferroelectric AlScN gate dielectric

IEEE electron device letters, 2023-08, Vol.44 (8), p.1-1

2023

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Design of p‐WSe 2 /n‐Ge Heterojunctions for High‐Speed Broadband Photodetectors

Advanced functional materials, 2022-01, Vol.32 (4)

2022

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A Hybrid Schottky–Ohmic Drain Contact for Thermally Stressed Beta‐Gallium Oxide Field‐Effect Transistors

Physica status solidi. A, Applications and materials science, 2023-03, Vol.220 (5), p.n/a

2023

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Reconfigurable Physical Reservoir in GaN/α-In 2 Se 3 HEMTs Enabled by Out-of-Plane Local Polarization of Ferroelectric 2D Layer

ACS nano, 2023-04, Vol.17 (8), p.7695-7704

2023

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Reconfigurable Radio‐Frequency High‐Electron Mobility Transistors via Ferroelectric‐Based Gallium Nitride Heterostructure

Advanced electronic materials, 2022-09, Vol.8 (9), p.n/a

2022

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A study of the effect of regenerated CCN on marine stratocumulus cloud development using the WRF-LES model with spectral bin microphysics scheme

Atmospheric research, 2020-12, Vol.246, p.105100, Article 105100

2020

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Effects of a Spike-Annealed HfO2 Gate Dielectric Layer on the On-Resistance and Interface Quality of AlGaN/GaN High-Electron-Mobility Transistors

Electronics (Basel), 2024-07, Vol.13 (14), p.2783

2024

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Effects of a Spike-Annealed HfO[sub.2] Gate Dielectric Layer on the On-Resistance and Interface Quality of AlGaN/GaN High-Electron-Mobility Transistors

Electronics (Basel), 2024-07, Vol.13 (14)

2024

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High‐resolution measurements of microphysics and entrainment in marine stratocumulus clouds

Quarterly journal of the Royal Meteorological Society, 2024-01, Vol.150 (758), p.81-97

2024

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Ferroelectric α‐In2Se3 Wrapped‐Gate β‐Ga2O3 Field‐Effect Transistors for Dynamic Threshold Voltage Control

Advanced electronic materials, 2021-08, Vol.7 (8), p.n/a

2021

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An artificial neuromuscular junction for enhanced reflexes and oculomotor dynamics based on a ferroelectric CuInP2S6/GaN HEMT

Science advances, 2023-09, Vol.9 (38), p.eadh9889-eadh9889

2023

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A 2.8 kV Breakdown Voltage α-Ga 2 O 3 MOSFET with Hybrid Schottky Drain Contact

Micromachines (Basel), 2024-01, Vol.15 (1)

2024

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A 2.8 kV Breakdown Voltage α-Ga[sub.2]O[sub.3] MOSFET with Hybrid Schottky Drain Contact

Micromachines (Basel), 2024-01, Vol.15 (1)

2024

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A study on the entrainment and mixing process in the continental stratocumulus clouds measured during the RACORO campaign

A 2.8 kV Breakdown Voltage α-Ga2O3 MOSFET with Hybrid Schottky Drain Contact

Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO2 Gate Dielectric

Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors

Influence of Quasi-Periodic Oscillation of Atmospheric Variables on Radiation Fog over A Mountainous Region of Korea

Design of p‐WSe2/n‐Ge Heterojunctions for High‐Speed Broadband Photodetectors

Influence of Entrainment on Centimeter-Scale Cloud Microphysics in Marine Stratocumulus Clouds Observed during CSET

Reconfigurable Physical Reservoir in GaN/α-In2Se3 HEMTs Enabled by Out-of-Plane Local Polarization of Ferroelectric 2D Layer

Cloud microphysical relationships and their implication on entrainment and mixing mechanism for the stratocumulus clouds measured during the VOCALS project

High‐resolution measurements of microphysics and entrainment in marine stratocumulus clouds

High-resolution measurements of microphysics and entrainment in marine stratocumulus clouds

Cloud microphysical response to entrainment and mixing is locally inhomogeneous and globally homogeneous: Evidence from the lab

Pulsed E-/D-mode switchable GaN HEMTs with a ferroelectric AlScN gate dielectric

Design of p‐WSe 2 /n‐Ge Heterojunctions for High‐Speed Broadband Photodetectors

A Hybrid Schottky–Ohmic Drain Contact for Thermally Stressed Beta‐Gallium Oxide Field‐Effect Transistors

Reconfigurable Physical Reservoir in GaN/α-In 2 Se 3 HEMTs Enabled by Out-of-Plane Local Polarization of Ferroelectric 2D Layer

Reconfigurable Radio‐Frequency High‐Electron Mobility Transistors via Ferroelectric‐Based Gallium Nitride Heterostructure

A study of the effect of regenerated CCN on marine stratocumulus cloud development using the WRF-LES model with spectral bin microphysics scheme

Effects of a Spike-Annealed HfO2 Gate Dielectric Layer on the On-Resistance and Interface Quality of AlGaN/GaN High-Electron-Mobility Transistors

Effects of a Spike-Annealed HfO[sub.2] Gate Dielectric Layer on the On-Resistance and Interface Quality of AlGaN/GaN High-Electron-Mobility Transistors

High‐resolution measurements of microphysics and entrainment in marine stratocumulus clouds

Ferroelectric α‐In2Se3 Wrapped‐Gate β‐Ga2O3 Field‐Effect Transistors for Dynamic Threshold Voltage Control

An artificial neuromuscular junction for enhanced reflexes and oculomotor dynamics based on a ferroelectric CuInP2S6/GaN HEMT

A 2.8 kV Breakdown Voltage α-Ga 2 O 3 MOSFET with Hybrid Schottky Drain Contact

A 2.8 kV Breakdown Voltage α-Ga[sub.2]O[sub.3] MOSFET with Hybrid Schottky Drain Contact

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