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Critical thickness for strain relaxation of Ge1−xSnx (x ≤ 0.17) grown by molecular beam epitaxy on Ge(001)

Applied physics letters, 2015-06, Vol.106 (23)

2015

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A Ladder Transmission Line Model for the Extraction of Ultralow Specific Contact Resistivity-Part I: Theoretical Design and Simulation Study

IEEE transactions on electron devices, 2020-07, Vol.67 (7), p.2682-2689

2020

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IEEE_Xplore

A Ladder Transmission Line Model for the Extraction of Ultralow Specific Contact Resistivity-Part II: Experimental Verification

IEEE transactions on electron devices, 2020-07, Vol.67 (7), p.2690-2696

2020

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IEEE_Xplore

Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality

Journal of applied physics, 2016-01, Vol.119 (2)

2016

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Au-Free AlGaN/GaN MIS-HEMTs With Embedded Current Sensing Structure for Power Switching Applications

IEEE transactions on electron devices, 2017-08, Vol.64 (8), p.3515-3518

2017

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IEEE_Xplore

Ultra-low specific contact resistivity (1.4 × 10−9 Ω·cm2) for metal contacts on in-situ Ga-doped Ge0.95Sn0.05 film

Journal of applied physics, 2017-12, Vol.122 (22)

2017

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Tunneling Field-Effect Transistor: Capacitance Components and Modeling

IEEE electron device letters, 2010-07, Vol.31 (7), p.752-754

2010

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IEEE_Xplore

GeSn-on-insulator substrate formed by direct wafer bonding

Applied physics letters, 2016-07, Vol.109 (2)

2016

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In-situ gallium-doping for forming p+ germanium-tin and application in germanium-tin p-i-n photodetector

Journal of applied physics, 2016-04, Vol.119 (15)

2016

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Elimination of the Parasitic Metal Resistance in Transmission Line Model for Extraction of Ultralow Specific Contact Resistivity

IEEE transactions on electron devices, 2019-07, Vol.66 (7), p.3086-3092

2019

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IEEE_Xplore

Enhancing CMOS transistor performance using lattice-mismatched materials in source/drain regions

Semiconductor science and technology, 2007-01, Vol.22 (1), p.S177-S182

Yeo, Yee-Chia

2007

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Ballistic Transport Performance of Silicane and Germanane Transistors

IEEE transactions on electron devices, 2014-05, Vol.61 (5), p.1590-1598

2014

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IEEE_Xplore

Nanoscale metal-InGaAs contacts with ultra-low specific contact resistivity: Improved interfacial quality and extraction methodology

Journal of applied physics, 2018-01, Vol.123 (2)

2018

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Self-assembly of tin wires via phase transformation of heteroepitaxial germanium-tin on germanium substrate

Journal of applied physics, 2015-06, Vol.117 (22)

2015

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Ultimate Performance Projection of Ultrathin Body Transistor Based on Group IV, III-V, and 2-D-Materials

IEEE transactions on electron devices, 2016-02, Vol.63 (2), p.773-780

2016

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IEEE_Xplore

New materials for post-Si computing: Ge and GeSn devices

MRS bulletin, 2014-08, Vol.39 (8), p.678-686

2014

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Design of power integrated circuits in full AlGaN/GaN MIS‐HEMT configuration for power conversion

Physica status solidi. A, Applications and materials science, 2017-03, Vol.214 (3), p.np-n/a

2017

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Tin surface segregation, desorption, and island formation during post-growth annealing of strained epitaxial Ge1−xSnx layer on Ge(001) substrate

Applied surface science, 2014-12, Vol.321, p.240-244

2014

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Germanium-Tin P-Channel Tunneling Field-Effect Transistor: Device Design and Technology Demonstration

IEEE transactions on electron devices, 2013-12, Vol.60 (12), p.4048-4056

2013

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IEEE_Xplore

High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform

Optics express, 2018-04, Vol.26 (8), p.10305-10314

2018

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Germanium-Tin (GeSn) P-Channel Fin Field-Effect Transistor Fabricated on a Novel GeSn-on-Insulator Substrate

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3754-3761

2018

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IEEE_Xplore

Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge 1-x Sn x ) Fin Structure

Scientific reports, 2017-05, Vol.7 (1), p.1835-9, Article 1835

2017

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Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study

Journal of applied physics, 2013-05, Vol.113 (19)

2013

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Thermal stability of germanium-tin (GeSn) fins

Applied physics letters, 2017-12, Vol.111 (25)

2017

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Above-bandgap optical properties of biaxially strained GeSn alloys grown by molecular beam epitaxy

Applied physics letters, 2014-01, Vol.104 (2)

2014

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Critical thickness for strain relaxation of Ge1−xSnx (x ≤ 0.17) grown by molecular beam epitaxy on Ge(001)

A Ladder Transmission Line Model for the Extraction of Ultralow Specific Contact Resistivity-Part I: Theoretical Design and Simulation Study

A Ladder Transmission Line Model for the Extraction of Ultralow Specific Contact Resistivity-Part II: Experimental Verification

Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality

Au-Free AlGaN/GaN MIS-HEMTs With Embedded Current Sensing Structure for Power Switching Applications

Ultra-low specific contact resistivity (1.4 × 10−9 Ω·cm2) for metal contacts on in-situ Ga-doped Ge0.95Sn0.05 film

Tunneling Field-Effect Transistor: Capacitance Components and Modeling

GeSn-on-insulator substrate formed by direct wafer bonding

In-situ gallium-doping for forming p+ germanium-tin and application in germanium-tin p-i-n photodetector

Elimination of the Parasitic Metal Resistance in Transmission Line Model for Extraction of Ultralow Specific Contact Resistivity

Enhancing CMOS transistor performance using lattice-mismatched materials in source/drain regions

Ballistic Transport Performance of Silicane and Germanane Transistors

Nanoscale metal-InGaAs contacts with ultra-low specific contact resistivity: Improved interfacial quality and extraction methodology

Self-assembly of tin wires via phase transformation of heteroepitaxial germanium-tin on germanium substrate

Ultimate Performance Projection of Ultrathin Body Transistor Based on Group IV, III-V, and 2-D-Materials

New materials for post-Si computing: Ge and GeSn devices

Design of power integrated circuits in full AlGaN/GaN MIS‐HEMT configuration for power conversion

Tin surface segregation, desorption, and island formation during post-growth annealing of strained epitaxial Ge1−xSnx layer on Ge(001) substrate

Germanium-Tin P-Channel Tunneling Field-Effect Transistor: Device Design and Technology Demonstration

High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform

Germanium-Tin (GeSn) P-Channel Fin Field-Effect Transistor Fabricated on a Novel GeSn-on-Insulator Substrate

Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge 1-x Sn x ) Fin Structure

Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study

Thermal stability of germanium-tin (GeSn) fins

Above-bandgap optical properties of biaxially strained GeSn alloys grown by molecular beam epitaxy

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