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Critical thickness for strain relaxation of Ge1−xSnx (x ≤ 0.17) grown by molecular beam epitaxy on Ge(001)

Applied physics letters, 2015-06, Vol.106 (23)

2015

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A Ladder Transmission Line Model for the Extraction of Ultralow Specific Contact Resistivity-Part I: Theoretical Design and Simulation Study

IEEE transactions on electron devices, 2020-07, Vol.67 (7), p.2682-2689

2020

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A Ladder Transmission Line Model for the Extraction of Ultralow Specific Contact Resistivity-Part II: Experimental Verification

IEEE transactions on electron devices, 2020-07, Vol.67 (7), p.2690-2696

2020

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Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality

Journal of applied physics, 2016-01, Vol.119 (2)

2016

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GeSn-on-insulator substrate formed by direct wafer bonding

Applied physics letters, 2016-07, Vol.109 (2)

2016

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Ultra-low specific contact resistivity (1.4 × 10−9 Ω·cm2) for metal contacts on in-situ Ga-doped Ge0.95Sn0.05 film

Journal of applied physics, 2017-12, Vol.122 (22)

2017

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Au-Free AlGaN/GaN MIS-HEMTs With Embedded Current Sensing Structure for Power Switching Applications

IEEE transactions on electron devices, 2017-08, Vol.64 (8), p.3515-3518

2017

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Tunneling Field-Effect Transistor: Capacitance Components and Modeling

IEEE electron device letters, 2010-07, Vol.31 (7), p.752-754

2010

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In-situ gallium-doping for forming p+ germanium-tin and application in germanium-tin p-i-n photodetector

Journal of applied physics, 2016-04, Vol.119 (15)

2016

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Elimination of the Parasitic Metal Resistance in Transmission Line Model for Extraction of Ultralow Specific Contact Resistivity

IEEE transactions on electron devices, 2019-07, Vol.66 (7), p.3086-3092

2019

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Ballistic Transport Performance of Silicane and Germanane Transistors

IEEE transactions on electron devices, 2014-05, Vol.61 (5), p.1590-1598

2014

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Enhancing CMOS transistor performance using lattice-mismatched materials in source/drain regions

Semiconductor science and technology, 2007-01, Vol.22 (1), p.S177-S182

Yeo, Yee-Chia

2007

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Nanoscale metal-InGaAs contacts with ultra-low specific contact resistivity: Improved interfacial quality and extraction methodology

Journal of applied physics, 2018-01, Vol.123 (2)

2018

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Self-assembly of tin wires via phase transformation of heteroepitaxial germanium-tin on germanium substrate

Journal of applied physics, 2015-06, Vol.117 (22)

2015

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Ultimate Performance Projection of Ultrathin Body Transistor Based on Group IV, III-V, and 2-D-Materials

IEEE transactions on electron devices, 2016-02, Vol.63 (2), p.773-780

2016

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Design of power integrated circuits in full AlGaN/GaN MIS‐HEMT configuration for power conversion

Physica status solidi. A, Applications and materials science, 2017-03, Vol.214 (3), p.np-n/a

2017

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High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform

Optics express, 2018-04, Vol.26 (8), p.10305-10314

2018

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New materials for post-Si computing: Ge and GeSn devices

MRS bulletin, 2014-08, Vol.39 (8), p.678-686

2014

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Tin surface segregation, desorption, and island formation during post-growth annealing of strained epitaxial Ge1−xSnx layer on Ge(001) substrate

Applied surface science, 2014-12, Vol.321, p.240-244

2014

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Germanium-Tin P-Channel Tunneling Field-Effect Transistor: Device Design and Technology Demonstration

IEEE transactions on electron devices, 2013-12, Vol.60 (12), p.4048-4056

2013

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Germanium-Tin (GeSn) P-Channel Fin Field-Effect Transistor Fabricated on a Novel GeSn-on-Insulator Substrate

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3754-3761

2018

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Above-bandgap optical properties of biaxially strained GeSn alloys grown by molecular beam epitaxy

Applied physics letters, 2014-01, Vol.104 (2)

2014

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Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge1−xSnx) Fin Structure

Scientific reports, 2017-05, Vol.7 (1), p.1835-9, Article 1835

2017

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All-GaN Power Integration: Devices to Functional Subcircuits and Converter ICs

IEEE journal of emerging and selected topics in power electronics, 2020-03, Vol.8 (1), p.31-41

2020

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Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study

Journal of applied physics, 2013-05, Vol.113 (19)

2013

Volltextzugriff (PDF)

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Critical thickness for strain relaxation of Ge1−xSnx (x ≤ 0.17) grown by molecular beam epitaxy on Ge(001)

A Ladder Transmission Line Model for the Extraction of Ultralow Specific Contact Resistivity-Part I: Theoretical Design and Simulation Study

A Ladder Transmission Line Model for the Extraction of Ultralow Specific Contact Resistivity-Part II: Experimental Verification

Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality

GeSn-on-insulator substrate formed by direct wafer bonding

Ultra-low specific contact resistivity (1.4 × 10−9 Ω·cm2) for metal contacts on in-situ Ga-doped Ge0.95Sn0.05 film

Au-Free AlGaN/GaN MIS-HEMTs With Embedded Current Sensing Structure for Power Switching Applications

Tunneling Field-Effect Transistor: Capacitance Components and Modeling

In-situ gallium-doping for forming p+ germanium-tin and application in germanium-tin p-i-n photodetector

Elimination of the Parasitic Metal Resistance in Transmission Line Model for Extraction of Ultralow Specific Contact Resistivity

Ballistic Transport Performance of Silicane and Germanane Transistors

Enhancing CMOS transistor performance using lattice-mismatched materials in source/drain regions

Nanoscale metal-InGaAs contacts with ultra-low specific contact resistivity: Improved interfacial quality and extraction methodology

Self-assembly of tin wires via phase transformation of heteroepitaxial germanium-tin on germanium substrate

Ultimate Performance Projection of Ultrathin Body Transistor Based on Group IV, III-V, and 2-D-Materials

Design of power integrated circuits in full AlGaN/GaN MIS‐HEMT configuration for power conversion

High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform

New materials for post-Si computing: Ge and GeSn devices

Tin surface segregation, desorption, and island formation during post-growth annealing of strained epitaxial Ge1−xSnx layer on Ge(001) substrate

Germanium-Tin P-Channel Tunneling Field-Effect Transistor: Device Design and Technology Demonstration

Germanium-Tin (GeSn) P-Channel Fin Field-Effect Transistor Fabricated on a Novel GeSn-on-Insulator Substrate

Above-bandgap optical properties of biaxially strained GeSn alloys grown by molecular beam epitaxy

Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge1−xSnx) Fin Structure

All-GaN Power Integration: Devices to Functional Subcircuits and Converter ICs

Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study

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