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Negative bias temperature instability of SiC MOSFET induced by interface trap assisted hole trapping

Applied physics letters, 2016-01, Vol.108 (1)

2016

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Impact of Layout Arrangement on Surge Current and Avalanche Robustness of Silicon Carbide JBS Diodes

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023, p.314-317

2023

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Negative bias temperature instability on subthreshold swing of SiC MOSFET

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1

2017

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A comprehensive study on the oxidation of 4H-SiC in diluted N2O ambient

Japanese Journal of Applied Physics, 2017-04, Vol.56 (4S)

2017

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Synthesis and properties of new polyimide–silica hybrid films through both intrachain and interchain bonding

Polymer (Guilford), 2003-11, Vol.44 (23), p.7079-7087

2003

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High Density 65W AC-DC Adaptor Enabled by SiC MOSFET with Ultralow VGS(on)

Key engineering materials, 2023-06, Vol.948, p.89-93

2023

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1700V/30A 4H-SiC MOSFET with low cut-in voltage embedded diode and room temperature boron implanted termination

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2015, p.265-268

2015

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Strong Fermi-level pinning induced by argon inductively coupled plasma treatment and post-metal deposition annealing on 4H-SiC

Solid-state electronics, 2017-07, Vol.133, p.83-87

2017

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Refining Accuracy: A Quasi-Floating Channel SPICE Model for Third-Quadrant SiC MOSFET Analysis in Both Planar and Trench Structures

2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2024, p.72-75

2024

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Influence of displacement damage induced by neutron irradiation on effective carrier density in 4H-SiC SBDs and MOSFETs

Japanese Journal of Applied Physics, 2019-04, Vol.58 (SB), p.SBBD08

2019

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Improvement of Transport Properties in Magnetic Tunneling Junctions by Capping Materials

IEEE transactions on magnetics, 2007-06, Vol.43 (6), p.2785-2787

2007

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Improvement of Switching Field in Magnetic Tunneling Junction Using Ru/Ta Capping Layer

IEEE transactions on magnetics, 2006-10, Vol.42 (10), p.2748-2750

2006

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Short-Circuit Ruggedness Analysis of SiC JMOS and DMOS

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019, p.255-258

2019

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High efficiency high reliability SiC MOSFET with monolithically integrated Schottky rectifier

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2017, p.45-48

2017

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A novel 4H-SiC Trench MOS Barrier Schottky rectifier fabricated by a two-mask process

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2013, p.171-174

2013

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Avalanche ruggedness and reverse-bias reliability of SiC MOSFET with integrated junction barrier controlled Schottky rectifier

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018, p.56-59

2018

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Photosensitive polyimide/silica hybrid optical materials: Synthesis, properties, and patterning

Polymer (Guilford), 2005-08, Vol.46 (18), p.6959-6967

2005

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An Ultralow Forward Voltage SiC Trenched Junction-Pinched Barrier Rectifier (TBR)

2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), 2023, p.1-4

2023

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Reduction in critical current density for spin torque transfer switching with composite free layer

Applied physics letters, 2008-09, Vol.93 (9), p.092504-092504-3

2008

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SiC MOSFET with Integrated Zener Diode as an Asymmetric Bidirectional Voltage Clamp Between the Gate and Source for Overvoltage Protection

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019, p.135-138

2019

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Effects of slurry formulations on chemical-mechanical polishing of low dielectric constant polysiloxanes: hydrido-organo siloxane and methyl silsesquioxane

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000-01, Vol.18 (1), p.201-207

2000

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Theoretical and Experimental Characterization of Small Band Gap Poly(3,4-ethylenedioxythiophene methine)s

Macromolecules, 2004-08, Vol.37 (16), p.5959-5964

2004

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High accuracy large-signal SPICE model for silicon carbide MOSFET

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018, p.403-406

2018

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Simulation and Optimization of 4H-SiC DMOSFET Power Transistors

Materials science forum, 2013-01, Vol.740-742, p.711-714

2013

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Effects of Molecular Structures on the Near-Infrared Optical Properties of Polyimide Derivatives and Their Corresponding Optical Waveguides

Macromolecules, 2003-05, Vol.36 (9), p.3315-3319

2003

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Negative bias temperature instability of SiC MOSFET induced by interface trap assisted hole trapping

Impact of Layout Arrangement on Surge Current and Avalanche Robustness of Silicon Carbide JBS Diodes

Negative bias temperature instability on subthreshold swing of SiC MOSFET

A comprehensive study on the oxidation of 4H-SiC in diluted N2O ambient

Synthesis and properties of new polyimide–silica hybrid films through both intrachain and interchain bonding

High Density 65W AC-DC Adaptor Enabled by SiC MOSFET with Ultralow VGS(on)

1700V/30A 4H-SiC MOSFET with low cut-in voltage embedded diode and room temperature boron implanted termination

Strong Fermi-level pinning induced by argon inductively coupled plasma treatment and post-metal deposition annealing on 4H-SiC

Refining Accuracy: A Quasi-Floating Channel SPICE Model for Third-Quadrant SiC MOSFET Analysis in Both Planar and Trench Structures

Influence of displacement damage induced by neutron irradiation on effective carrier density in 4H-SiC SBDs and MOSFETs

Improvement of Transport Properties in Magnetic Tunneling Junctions by Capping Materials

Improvement of Switching Field in Magnetic Tunneling Junction Using Ru/Ta Capping Layer

Short-Circuit Ruggedness Analysis of SiC JMOS and DMOS

High efficiency high reliability SiC MOSFET with monolithically integrated Schottky rectifier

A novel 4H-SiC Trench MOS Barrier Schottky rectifier fabricated by a two-mask process

Avalanche ruggedness and reverse-bias reliability of SiC MOSFET with integrated junction barrier controlled Schottky rectifier

Photosensitive polyimide/silica hybrid optical materials: Synthesis, properties, and patterning

An Ultralow Forward Voltage SiC Trenched Junction-Pinched Barrier Rectifier (TBR)

Reduction in critical current density for spin torque transfer switching with composite free layer

SiC MOSFET with Integrated Zener Diode as an Asymmetric Bidirectional Voltage Clamp Between the Gate and Source for Overvoltage Protection

Effects of slurry formulations on chemical-mechanical polishing of low dielectric constant polysiloxanes: hydrido-organo siloxane and methyl silsesquioxane

Theoretical and Experimental Characterization of Small Band Gap Poly(3,4-ethylenedioxythiophene methine)s

High accuracy large-signal SPICE model for silicon carbide MOSFET

Simulation and Optimization of 4H-SiC DMOSFET Power Transistors

Effects of Molecular Structures on the Near-Infrared Optical Properties of Polyimide Derivatives and Their Corresponding Optical Waveguides

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