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High-Performance Slow-Wave Transmission Lines With Optimized Slot-Type Floating Shields

IEEE transactions on electron devices, 2009-08, Vol.56 (8), p.1705-1711

2009

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A 17.5-26 GHz Low-Noise Amplifier With Over 8 kV ESD Protection in 65 nm CMOS

IEEE microwave and wireless components letters, 2012-09, Vol.22 (9), p.483-485

2012

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Design of 60-GHz Low-Noise Amplifiers With Low NF and Robust ESD Protection in 65-nm CMOS

IEEE transactions on microwave theory and techniques, 2013-01, Vol.61 (1), p.553-561

2013

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A V-Band Divide-by-Three Injection-Locked Frequency Divider in 28 nm CMOS

IEEE microwave and wireless components letters, 2012-11, Vol.22 (11), p.592-594

2012

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Analog/RF wonderland: Circuit and technology co-optimization in advanced FinFET technology

2016 IEEE Symposium on VLSI Technology, 2016, p.1-2

2016

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A V-band divide-by-three differential direct injection-locked frequency divider in 65-nm CMOS

IEEE Custom Integrated Circuits Conference 2010, 2010, p.1-4

2010

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High-performance integrated fan-out wafer level packaging (InFO-WLP): Technology and system integration

2012 International Electron Devices Meeting, 2012, p.14.1.1-14.1.4

2012

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On the High-Frequency Characteristics and Model of Bulk Effect in RF MOSFETs

IEICE transactions on electronics, 2005-05, Vol.E88-C (5), p.838-844

YANG, M.-T.

2005

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Fully Analytical Modeling of Cu Interconnects up to 110 GHz

Japanese Journal of Applied Physics, 2008-04, Vol.47 (4S), p.2473

2008

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A V-band low-noise amplifier with 5.3-dB NF and over 8-kV ESD protection in 65-nm RF CMOS

2012 IEEE/MTT-S International Microwave Symposium Digest, 2012, p.1-3

2012

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A 24-GHz low-noise amplifier co-designed with ESD protection using junction varactors in 65-nm RF CMOS

2011 IEEE MTT-S International Microwave Symposium, 2011, p.1-4

2011

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Band-pass filter co-designed with ESD protection using integrated passive device technology

2015 Asia-Pacific Symposium on Electromagnetic Compatibility (APEMC), 2015, p.647-649

2015

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An ultra-low power K-band low-noise amplifier co-designed with ESD protection in 40-nm CMOS

2011 IEEE International Conference on IC Design & Technology, 2011, p.1-4

2011

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A 56-67 GHz low-noise amplifier with 5.1-dB NF and 2.5-kV HBM ESD protection in 65-nm CMOS

2012 Asia Pacific Microwave Conference Proceedings, 2012, p.747-749

2012

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Design of 60-GHz Low-Noise Amplifiers With Low NF and Robust ESD Protection in 65-nm CMOS: Special Issue on 2012 International Microwave Symposium (Part II)

IEEE transactions on microwave theory and techniques, 2013, Vol.61 (1), p.553-561

2013

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A 0.011-mm227.5-GHz VCO with Transformer-Coupled Bandpass Filter Achieving -191 dBc/Hz FoM in 16-nm FinFET CMOS

2020 IEEE/MTT-S International Microwave Symposium (IMS), 2020, p.353-356

2020

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High uniformity of Al0.3Ga0.7As/ln0.15Ga0.85As doped-channel structures grown by molecular beam epitaxy on 3″ GaAs substrates

Journal of electronic materials, 1994-07, Vol.23 (7), p.675-679

1994

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High temperature performance of Ga0.51In0.49P/In0.2Ga0.8As pseudomorphic HEMTs with WSix gates

Solid-state electronics, 1995-02, Vol.38 (2), p.457-459

1995

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Optimization and modeling for MOS varactors in 65 nm low-power mixed-signal/radio-frequency technology

Microwave and optical technology letters, 2009-09, Vol.51 (9), p.2119-2121

2009

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A performance study of layout and Vt options for low noise amplifier design in 65-nm CMOS

2012 IEEE Radio Frequency Integrated Circuits Symposium, 2012, p.535-538

2012

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A Physical De-embedding Method for Silicon-based Device Applications

PIERS online, 2009, Vol.5 (4), p.301-305

2009

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High temperature performance of pseudomorphic HEMTs with WSix gates

Solid-state electronics, 1995-02, Vol.38 (2), p.457-459

1995

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High temperature performance of [formula omitted] pseudomorphic HEMTs with WSi x gates

Solid-state electronics, 1995, Vol.38 (2), p.457-459

1995

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Ion-implanted GaAs MESFET's with W/WN/sub x/ bi-layer gate designs

International Electron Devices and Materials Symposium, 1994, p.7-7

1994

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High uniformity of Al0.3Ga0.7As/In0.15Ga0.85As doped-channel structures grown by molecular beam epitaxy on 3 GaAs substrates

Journal of electronic materials, 1994-07, Vol.23 (7), p.675-679

1994

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High-Performance Slow-Wave Transmission Lines With Optimized Slot-Type Floating Shields

A 17.5-26 GHz Low-Noise Amplifier With Over 8 kV ESD Protection in 65 nm CMOS

Design of 60-GHz Low-Noise Amplifiers With Low NF and Robust ESD Protection in 65-nm CMOS

A V-Band Divide-by-Three Injection-Locked Frequency Divider in 28 nm CMOS

Analog/RF wonderland: Circuit and technology co-optimization in advanced FinFET technology

A V-band divide-by-three differential direct injection-locked frequency divider in 65-nm CMOS

High-performance integrated fan-out wafer level packaging (InFO-WLP): Technology and system integration

On the High-Frequency Characteristics and Model of Bulk Effect in RF MOSFETs

Fully Analytical Modeling of Cu Interconnects up to 110 GHz

A V-band low-noise amplifier with 5.3-dB NF and over 8-kV ESD protection in 65-nm RF CMOS

A 24-GHz low-noise amplifier co-designed with ESD protection using junction varactors in 65-nm RF CMOS

Band-pass filter co-designed with ESD protection using integrated passive device technology

An ultra-low power K-band low-noise amplifier co-designed with ESD protection in 40-nm CMOS

A 56-67 GHz low-noise amplifier with 5.1-dB NF and 2.5-kV HBM ESD protection in 65-nm CMOS

Design of 60-GHz Low-Noise Amplifiers With Low NF and Robust ESD Protection in 65-nm CMOS: Special Issue on 2012 International Microwave Symposium (Part II)

A 0.011-mm227.5-GHz VCO with Transformer-Coupled Bandpass Filter Achieving -191 dBc/Hz FoM in 16-nm FinFET CMOS

High uniformity of Al0.3Ga0.7As/ln0.15Ga0.85As doped-channel structures grown by molecular beam epitaxy on 3″ GaAs substrates

High temperature performance of Ga0.51In0.49P/In0.2Ga0.8As pseudomorphic HEMTs with WSix gates

Optimization and modeling for MOS varactors in 65 nm low-power mixed-signal/radio-frequency technology

A performance study of layout and Vt options for low noise amplifier design in 65-nm CMOS

A Physical De-embedding Method for Silicon-based Device Applications

High temperature performance of pseudomorphic HEMTs with WSix gates

High temperature performance of [formula omitted] pseudomorphic HEMTs with WSi x gates

Ion-implanted GaAs MESFET's with W/WN/sub x/ bi-layer gate designs

High uniformity of Al0.3Ga0.7As/In0.15Ga0.85As doped-channel structures grown by molecular beam epitaxy on 3 GaAs substrates

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