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Investigation of on-current degradation behavior induced by surface hydrolysis effect under negative gate bias stress in amorphous InGaZnO thin-film transistors

Applied physics letters, 2014-03, Vol.104 (10)

2014

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Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors

Applied physics letters, 2014-03, Vol.104 (13)

2014

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Initial time-dependent current growth phenomenon in n -type organic transistors induced by interfacial dipole effects

Journal of applied physics, 2015-03, Vol.117 (10)

2015

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Photoelectric heat effect induce instability on the negative bias temperature illumination stress for InGaZnO thin film transistors

Applied physics letters, 2012-12, Vol.101 (25)

2012

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Influence of an anomalous dimension effect on thermal instability in amorphous-InGaZnO thin-film transistors

Journal of applied physics, 2014-10, Vol.116 (15)

2014

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Effects of interfacial tension and molecular dipole moment on the electrical characteristics of low-voltage-driven organic electronic devices

Organic electronics, 2018-08, Vol.59, p.374-381

2018

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Dual carrier traps related hysteresis in organic inverters with polyimide-modified gate-dielectrics

Applied physics letters, 2010-04, Vol.96 (15)

2010

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Tuning surface properties in photosensitive polyimide. Material design for high performance organic thin-film transistors

Journal of materials chemistry, 2010-01, Vol.20 (26), p.5474-5480

2010

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Organic Nonvolatile Memory Based on Low Voltage Organic Thin Film Transistors with Polymer Gate Electrets

Journal of the Electrochemical Society, 2011, Vol.158 (3), p.H277

2011

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Organic complementary inverters with polyimide films as the surface modification of dielectrics

Organic electronics, 2009-08, Vol.10 (5), p.1001-1005

2009

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Analyses of Electrical Properties and Stability of Organic Complementary Transistors

Journal of the Electrochemical Society, 2010, Vol.157 (10), p.H959

2010

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56.2: Investigating the IGZO-TFT Performances Under Gate-bias Stress With and Without Light Illumination for 4k2k 65-inch Displays

SID International Symposium Digest of technical papers, 2013-06, Vol.44 (1), p.775-778

2013

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P-139L: Late-News Poster: AC Gate-Drain-Bias Stress Study of amorphous Indium Gallium Zinc Oxide Thin Film Transistors for GOA Applications

SID International Symposium Digest of technical papers, 2012-06, Vol.43 (1), p.1126-1128

2012

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P‐55: High Resolution Display with ES and BCE‐types of Oxide TFT Development

SID International Symposium Digest of technical papers, 2017-05, Vol.48 (1), p.1452-1455

2017

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63.4: High-Performance 4K x 2K 65-in. TV with BCE-Type Oxide TFTs

SID International Symposium Digest of technical papers, 2015-06, Vol.46 (1), p.943-945

2015

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Dual carrier traps related hysteresis in organic inverterswith polyimide-modified gate-dielectrics

Applied physics letters, 2010-04, Vol.96 (15), p.153302-153302-3

2010

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Improved electrical performance of organic thin-film transistors with modified high-K dielectrics

2017 24th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2017, p.183-186

2017

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P-18: High Reliability Amorphous-Oxide Thin-Film Transistors with an Expanded-Electrode Structure

SID International Symposium Digest of technical papers, 2016-05, Vol.47 (1), p.1183-1185

2016

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Tuning surface properties in photosensitive polyimide. Material design for high performance organic thin-film transistorsElectronic supplementary information (ESI) available: Contact angles, electrical characteristics, field-effect mobilities, transfer characteristics. See DOI: 10.1039/c0jm00196a

2010-06

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Combination of a fast cleanup procedure and a DR-CALUX® bioassay for dioxin surveillance in Taiwanese soils

International journal of environmental research and public health, 2014-05, Vol.11 (5), p.4886-4904

2014

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Size-controllable synthesis of Bi/Bi2O3 heterojunction nanoparticles using pulsed Nd:YAG laser deposition and metal-semiconductor-heterojunction-assisted photoluminescence

Nanoscale, 2016-02, Vol.8 (6), p.3565-3571

2016

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Size-controllable synthesis of Bi/Bi2O3 heterojunction nanoparticles using pulsed Nd:YAG laser deposition and metal-semiconductor-heterojunction-assisted photoluminescenceElectronic supplementary information (ESI) available: Diameter distribution of the Bi nanoparticles, and four band structures of metal-semiconductor heterojunctions. See DOI: 10.1039/c5nr08417b

2016-02

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Size-controllable synthesis of Bi/Bi sub(2)O sub(3) heterojunction nanoparticles using pulsed Nd:YAG laser deposition and metal-semiconductor-heterojunction-assisted photoluminescence

Nanoscale, 2016-02, Vol.8 (6), p.3565-3571

2016

Volltextzugriff (PDF)

Size-controllable synthesis of Bi/Bi 2 O 3 heterojunction nanoparticles using pulsed Nd:YAG laser deposition and metal–semiconductor-heterojunction-assisted photoluminescence

Nanoscale, 2016, Vol.8 (6), p.3565-3571

2016

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Analysis of composite laminated plates

Applied mathematics and mechanics, 1988-04, Vol.9 (4), p.317-325

1988

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Investigation of on-current degradation behavior induced by surface hydrolysis effect under negative gate bias stress in amorphous InGaZnO thin-film transistors

Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors

Initial time-dependent current growth phenomenon in n -type organic transistors induced by interfacial dipole effects

Photoelectric heat effect induce instability on the negative bias temperature illumination stress for InGaZnO thin film transistors

Influence of an anomalous dimension effect on thermal instability in amorphous-InGaZnO thin-film transistors

Effects of interfacial tension and molecular dipole moment on the electrical characteristics of low-voltage-driven organic electronic devices

Dual carrier traps related hysteresis in organic inverters with polyimide-modified gate-dielectrics

Tuning surface properties in photosensitive polyimide. Material design for high performance organic thin-film transistors

Organic Nonvolatile Memory Based on Low Voltage Organic Thin Film Transistors with Polymer Gate Electrets

Organic complementary inverters with polyimide films as the surface modification of dielectrics

Analyses of Electrical Properties and Stability of Organic Complementary Transistors

56.2: Investigating the IGZO-TFT Performances Under Gate-bias Stress With and Without Light Illumination for 4k2k 65-inch Displays

P-139L: Late-News Poster: AC Gate-Drain-Bias Stress Study of amorphous Indium Gallium Zinc Oxide Thin Film Transistors for GOA Applications

P‐55: High Resolution Display with ES and BCE‐types of Oxide TFT Development

63.4: High-Performance 4K x 2K 65-in. TV with BCE-Type Oxide TFTs

Dual carrier traps related hysteresis in organic inverterswith polyimide-modified gate-dielectrics

Improved electrical performance of organic thin-film transistors with modified high-K dielectrics

P-18: High Reliability Amorphous-Oxide Thin-Film Transistors with an Expanded-Electrode Structure

Tuning surface properties in photosensitive polyimide. Material design for high performance organic thin-film transistorsElectronic supplementary information (ESI) available: Contact angles, electrical characteristics, field-effect mobilities, transfer characteristics. See DOI: 10.1039/c0jm00196a

Combination of a fast cleanup procedure and a DR-CALUX® bioassay for dioxin surveillance in Taiwanese soils

Size-controllable synthesis of Bi/Bi2O3 heterojunction nanoparticles using pulsed Nd:YAG laser deposition and metal-semiconductor-heterojunction-assisted photoluminescence

Size-controllable synthesis of Bi/Bi sub(2)O sub(3) heterojunction nanoparticles using pulsed Nd:YAG laser deposition and metal-semiconductor-heterojunction-assisted photoluminescence

Size-controllable synthesis of Bi/Bi 2 O 3 heterojunction nanoparticles using pulsed Nd:YAG laser deposition and metal–semiconductor-heterojunction-assisted photoluminescence

Analysis of composite laminated plates

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