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A Novel Linear Antenna Synthesis for Linear Dispersion Codes Based on an Innovative HYBRID Genetic Algorithm

Symmetry (Basel), 2019-09, Vol.11 (9), p.1176

2019

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A Power Control Algorithm Based on Chicken Game Theory in Multi-Hop Networks

Symmetry (Basel), 2019-05, Vol.11 (5), p.718

2019

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Automatic Parking Guidance System Based on Ultraviolet Communication

Green Energy and Networking, p.123-132

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Deep-level defects in gallium oxide

Journal of physics. D, Applied physics, 2021-01, Vol.54 (4), p.43002

2021

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An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics

Nature communications, 2023-07, Vol.14 (1), p.4459-4459, Article 4459

2023

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Recent progress of Ga2O3 power technology: large-area devices, packaging and applications

Japanese Journal of Applied Physics, 2023-06, Vol.62 (SF), p.SF0801

2023

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Toward emerging gallium oxide semiconductors: A roadmap

Fundamental research (Beijing), 2021-11, Vol.1 (6), p.697-716

2021

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Intestinal Anti-Inflammatory Effects of Selenized Ulva pertusa Polysaccharides in a Dextran Sulfate Sodium-Induced Inflammatory Bowel Disease Model

Journal of medicinal food, 2021-03, Vol.24 (3), p.236

2021

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Recent progress of Ga 2 O 3 power technology: large-area devices, packaging and applications

Japanese Journal of Applied Physics, 2023-06, Vol.62 (SF), p.SF0801

2023

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Majority and Minority Carrier Traps in NiO/β-Ga2O3 p+-n Heterojunction Diode

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.981-987

2022

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Temperature-dependent epitaxial evolution of carbon-free corundum α-Ga2O3 on sapphire

Journal of physics. D, Applied physics, 2024-09, Vol.57 (35)

2024

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M-Plane α-Ga₂O₃ Solar-Blind Detector With Record-High Responsivity-Bandwidth Product and High-Temperature Operation Capability

IEEE electron device letters, 2022-04, Vol.43 (4), p.541-544

2022

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Identification and Suppression of Majority Surface States in the Dry-Etched β‑Ga2O3

The journal of physical chemistry letters, 2022-08, Vol.13 (30), p.7094-7099

2022

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Identification of risk factors for postoperative delirium in elderly patients with hip fractures by a risk stratification index model: A retrospective study

Brain and behavior, 2021-12, Vol.11 (12), p.e32420-n/a

2021

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Photoconductive and photovoltaic metal-semiconductor-metal κ-Ga2O3 solar-blind detectors with high rejection ratios

Journal of physics. D, Applied physics, 2022-09, Vol.55 (39)

2022

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Ga2O3 Bipolar Heterojunction-Based Optoelectronic Synapse Array with Visual Attention

The journal of physical chemistry letters, 2024-01, Vol.15 (2), p.556-564

2024

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Ga 2 O 3 Bipolar Heterojunction-Based Optoelectronic Synapse Array with Visual Attention

The journal of physical chemistry letters, 2024-01, Vol.15 (2), p.556-564

2024

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Photoconductive and photovoltaic metal-semiconductor-metal κ-Ga 2 O 3 solar-blind detectors with high rejection ratios

Journal of physics. D, Applied physics, 2022-09, Vol.55 (39), p.394003

2022

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High-VTH E-Mode GaN HEMTs With Robust Gate-Bias-Dependent VTH Stability Enabled by Mg-Doped p-GaN Engineering

IEEE transactions on electron devices, 2023-11, Vol.70 (11), p.5596-5602

2023

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High- V TH E-Mode GaN HEMTs With Robust Gate-Bias-Dependent V TH Stability Enabled by Mg-Doped p-GaN Engineering

IEEE transactions on electron devices, 2023-11, Vol.70 (11), p.5596-5602

2023

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Identification and Suppression of Majority Surface States in the Dry-Etched β-Ga 2 O 3

The journal of physical chemistry letters, 2022-08, Vol.13 (30), p.7094-7099

2022

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Majority and Minority Carrier Traps in NiO/β-Ga 2 O 3 p + -n Heterojunction Diode

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.981-987

2022

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Field-Plated NiO/Ga2O3 p-n Heterojunction Power Diodes With High-Temperature Thermal Stability and Near Unity Ideality Factors

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.1166-1171

2021

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Dynamic reactions of defects in ion-implanted 4H-SiC upon high temperature annealing

Journal of physics. D, Applied physics, 2023-06, Vol.56 (23), p.235102

2023

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Property manipulation through pulsed laser annealing in high dose Mg-implanted GaN

Journal of applied physics, 2020-12, Vol.128 (23)

2020

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A Novel Linear Antenna Synthesis for Linear Dispersion Codes Based on an Innovative HYBRID Genetic Algorithm

A Power Control Algorithm Based on Chicken Game Theory in Multi-Hop Networks

Automatic Parking Guidance System Based on Ultraviolet Communication

Deep-level defects in gallium oxide

An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics

Recent progress of Ga2O3 power technology: large-area devices, packaging and applications

Toward emerging gallium oxide semiconductors: A roadmap

Intestinal Anti-Inflammatory Effects of Selenized Ulva pertusa Polysaccharides in a Dextran Sulfate Sodium-Induced Inflammatory Bowel Disease Model

Recent progress of Ga 2 O 3 power technology: large-area devices, packaging and applications

Majority and Minority Carrier Traps in NiO/β-Ga2O3 p+-n Heterojunction Diode

Temperature-dependent epitaxial evolution of carbon-free corundum α-Ga2O3 on sapphire

M-Plane α-Ga₂O₃ Solar-Blind Detector With Record-High Responsivity-Bandwidth Product and High-Temperature Operation Capability

Identification and Suppression of Majority Surface States in the Dry-Etched β‑Ga2O3

Identification of risk factors for postoperative delirium in elderly patients with hip fractures by a risk stratification index model: A retrospective study

Photoconductive and photovoltaic metal-semiconductor-metal κ-Ga2O3 solar-blind detectors with high rejection ratios

Ga2O3 Bipolar Heterojunction-Based Optoelectronic Synapse Array with Visual Attention

Ga 2 O 3 Bipolar Heterojunction-Based Optoelectronic Synapse Array with Visual Attention

Photoconductive and photovoltaic metal-semiconductor-metal κ-Ga 2 O 3 solar-blind detectors with high rejection ratios

High-VTH E-Mode GaN HEMTs With Robust Gate-Bias-Dependent VTH Stability Enabled by Mg-Doped p-GaN Engineering

High- V TH E-Mode GaN HEMTs With Robust Gate-Bias-Dependent V TH Stability Enabled by Mg-Doped p-GaN Engineering

Identification and Suppression of Majority Surface States in the Dry-Etched β-Ga 2 O 3

Majority and Minority Carrier Traps in NiO/β-Ga 2 O 3 p + -n Heterojunction Diode

Field-Plated NiO/Ga2O3 p-n Heterojunction Power Diodes With High-Temperature Thermal Stability and Near Unity Ideality Factors

Dynamic reactions of defects in ion-implanted 4H-SiC upon high temperature annealing

Property manipulation through pulsed laser annealing in high dose Mg-implanted GaN

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