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High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

IEEE electron device letters, 2008-04, Vol.29 (4), p.294-296

2008

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Interfacial chemistry of oxides on InxGa(1−x)As and implications for MOSFET applications

Current opinion in solid state & materials science, 2011-10, Vol.15 (5), p.188-207

2011

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Ferroelectric and Anti-Ferroelectric Hafnium Zirconium Oxide: Scaling Limit, Switching Speed and Record High Polarization Density

2019 Symposium on VLSI Technology, 2019, p.T44-T45

2019

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Simplified Surface Preparation for GaAs Passivation Using Atomic Layer-Deposited High- \kappa Dielectrics

IEEE transactions on electron devices, 2007-08, Vol.54 (8), p.1811-1817

2007

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GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

IEEE electron device letters, 2003-04, Vol.24 (4), p.209-211

2003

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Current-transport properties of atomic-layer-deposited ultrathin Al2O3 on GaAs

Solid-state electronics, 2006-06, Vol.50 (6), p.1012-1015

2006

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Submicrometer inversion-type enhancement-mode ingaas MOSFET with Atomic-Layer-Deposited Al2O3 as gate dielectric

IEEE electron device letters, 2007-11, Vol.28 (11), p.935-938

2007

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Improvement of GaAs metal–semiconductor field-effect transistor drain–source breakdown voltage by oxide surface passivation grown by atomic layer deposition

Solid-state electronics, 2005-05, Vol.49 (5), p.790-794

2005

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Chemically exfoliating large sheets of phosphorene via choline chloride urea viscosity-tuning

Nanotechnology, 2017-04, Vol.28 (15), p.155601-155601

2017

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Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga2O3(Gd2O3) as gate dielectric

Journal of crystal growth, 2003-04, Vol.251 (1-4), p.837-842

2003

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Interfacial chemistry of oxides on In x Ga (1− x )As and implications for MOSFET applications

Current opinion in solid state & materials science, 2011, Vol.15 (5), p.188-207

2011

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GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

Materials science & engineering. B, Solid-state materials for advanced technology, 2006-12, Vol.135 (3), p.282-284

2006

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0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode [Formula Omitted] MOSFET

IEEE electron device letters, 2009-07, Vol.30 (7), p.700

2009

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Characterization of Parylene-N as Flexible Substrate and Passivation Layer for Microwave and Millimeter-Wave Integrated Circuits

IEEE transactions on advanced packaging, 2009-02, Vol.32 (1), p.84-92

2009

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Current-transport properties of atomic-layer-deposited ultrathin Al 2O 3 on GaAs

Solid-state electronics, 2006, Vol.50 (6), p.1012-1015

2006

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Single-walled carbon nanotube transistors fabricated by advanced alignment techniques utilizing CVD growth and dielectrophoresis

Solid-state electronics, 2008-08, Vol.52 (8), p.1260-1263

2008

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Electrical measurements of voltage stressed Al2O3/GaAs MOSFET

Microelectronics and reliability, 2007-12, Vol.47 (12), p.2082-2087

2007

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Simplified Surface Preparation for GaAs Passivation Using Atomic Layer-Deposited High- [kappa] Dielectrics

IEEE transactions on electron devices, 2007-08, Vol.54 (8), p.1811

2007

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Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited \hbox\hbox as Gate Dielectric

IEEE electron device letters, 2007-11, Vol.28 (11), p.935-938

2007

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Fermi-level unpinning on GaAs (111)A surface with direct ALD Al2O3

2009 Device Research Conference, 2009, p.111-112

2009

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Electrical measurements of voltage stressed Al 2O 3/GaAs MOSFET

Microelectronics and reliability, 2007, Vol.47 (12), p.2082-2087

2007

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GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al 2O 3 as gate dielectric

Materials science & engineering. B, Solid-state materials for advanced technology, 2006, Vol.135 (3), p.282-284

2006

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0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode \hbox\hbox\hbox MOSFET

IEEE electron device letters, 2009-07, Vol.30 (7), p.700-702

2009

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Metal contacts to MoS2: A two-dimensional semiconductor

70th Device Research Conference, 2012, p.65-66

2012

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High performance submicron inversion-type enhancement-mode InGaAs MOSFETs with ALD Al2O3, HfO2 and HfAlO as gate dielectrics

2007 IEEE International Electron Devices Meeting, 2007, p.637-640

2007

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High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

Interfacial chemistry of oxides on InxGa(1−x)As and implications for MOSFET applications

Ferroelectric and Anti-Ferroelectric Hafnium Zirconium Oxide: Scaling Limit, Switching Speed and Record High Polarization Density

Simplified Surface Preparation for GaAs Passivation Using Atomic Layer-Deposited High- \kappa Dielectrics

GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

Current-transport properties of atomic-layer-deposited ultrathin Al2O3 on GaAs

Submicrometer inversion-type enhancement-mode ingaas MOSFET with Atomic-Layer-Deposited Al2O3 as gate dielectric

Improvement of GaAs metal–semiconductor field-effect transistor drain–source breakdown voltage by oxide surface passivation grown by atomic layer deposition

Chemically exfoliating large sheets of phosphorene via choline chloride urea viscosity-tuning

Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga2O3(Gd2O3) as gate dielectric

Interfacial chemistry of oxides on In x Ga (1− x )As and implications for MOSFET applications

GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode [Formula Omitted] MOSFET

Characterization of Parylene-N as Flexible Substrate and Passivation Layer for Microwave and Millimeter-Wave Integrated Circuits

Current-transport properties of atomic-layer-deposited ultrathin Al 2O 3 on GaAs

Single-walled carbon nanotube transistors fabricated by advanced alignment techniques utilizing CVD growth and dielectrophoresis

Electrical measurements of voltage stressed Al2O3/GaAs MOSFET

Simplified Surface Preparation for GaAs Passivation Using Atomic Layer-Deposited High- [kappa] Dielectrics

Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited \hbox\hbox as Gate Dielectric

Fermi-level unpinning on GaAs (111)A surface with direct ALD Al2O3

Electrical measurements of voltage stressed Al 2O 3/GaAs MOSFET

GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al 2O 3 as gate dielectric

0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode \hbox\hbox\hbox MOSFET

Metal contacts to MoS2: A two-dimensional semiconductor

High performance submicron inversion-type enhancement-mode InGaAs MOSFETs with ALD Al2O3, HfO2 and HfAlO as gate dielectrics

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