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High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

IEEE electron device letters, 2008-04, Vol.29 (4), p.294-296

2008

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Melting of a 2D quantum electron solid in high magnetic field

Nature physics, 2006-07, Vol.2 (7), p.452-455

2006

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Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited Al2O3 on GaAs

Applied physics letters, 2005-10, Vol.87 (18)

2005

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Correlation lengths of the wigner-crystal order in a two-dimensional electron system at high magnetic fields

Physical review letters, 2002-10, Vol.89 (17), p.176802-176802, Article 176802

2002

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GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

IEEE electron device letters, 2003-04, Vol.24 (4), p.209-211

2003

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Evidence for two different solid phases of two-dimensional electrons in high magnetic fields

Physical review letters, 2004-11, Vol.93 (20), p.206805.1-206805.4, Article 206805

2004

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Reliable passivation of black phosphorus by thin hybrid coating

Nanotechnology, 2017-06, Vol.28 (26), p.265201-265201

2017

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Giant microwave photoresistance of two-dimensional electron gas

Applied physics letters, 2001-10, Vol.79 (14), p.2193-2195

2001

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Microwave resonance of the 2D Wigner crystal around integer Landau fillings

Physical review letters, 2003-07, Vol.91 (1), p.016801-016801, Article 016801

2003

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Evidence of a first-order phase transition between wigner-crystal and bubble phases of 2D electrons in higher landau levels

Physical review letters, 2004-10, Vol.93 (17), p.176808.1-176808.4, Article 176808

2004

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Effects of (NH4)2S passivation on the off-state performance of 3-dimensional InGaAs metal-oxide-semiconductor field-effect transistors

Applied physics letters, 2011-10, Vol.99 (15)

2011

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Atomic-layer-deposited nanostructures for graphene-based nanoelectronics

Applied physics letters, 2008-01, Vol.92 (1), p.013101-013101-3

2008

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Top-gated graphene field-effect-transistors formed by decomposition of SiC

Applied physics letters, 2008-03, Vol.92 (9), p.092102-092102-3

2008

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Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric

Applied physics letters, 2006-06, Vol.88 (26)

2006

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Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)

Applied physics letters, 2009-10, Vol.95 (17)

2009

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Magnetoconductance oscillations in graphene antidot arrays

Applied physics letters, 2008-09, Vol.93 (12), p.122102-122102-3

2008

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Chemically exfoliating large sheets of phosphorene via choline chloride urea viscosity-tuning

Nanotechnology, 2017-04, Vol.28 (15), p.155601-155601

2017

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Gasification of a South Australian low-rank coal with carbon dioxide and steam: kinetics and reactivity studies

Fuel (Guildford), 1998-09, Vol.77 (11), p.1209-1219

1998

Volltextzugriff (PDF)

GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

Applied physics letters, 2005-02, Vol.86 (6)

2005

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Photo-assisted capacitance-voltage characterization of high-quality atomic-layer-deposited Al2O3∕GaN metal-oxide-semiconductor structures

Applied physics letters, 2007-04, Vol.90 (14)

2007

Volltextzugriff (PDF)

III-V-on-nothing metal-oxide-semiconductor field-effect transistors enabled by top-down nanowire release process: Experiment and simulation

Applied physics letters, 2011-09, Vol.99 (11), p.112113-112113-3

2011

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Microwave resonance of the bubble phases in 1/4 and 3/4 filled high Landau levels

Physical review letters, 2002-09, Vol.89 (13), p.136804-136804, Article 136804

2002

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Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3

Journal of applied physics, 2016-12, Vol.120 (23)

2016

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0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode \hbox\hbox\hbox MOSFET

IEEE electron device letters, 2009-07, Vol.30 (7), p.700-702

2009

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Band offset determination of atomic-layer-deposited Al2O3 and HfO2 on InP by internal photoemission and spectroscopic ellipsometry

Journal of applied physics, 2013-01, Vol.113 (2)

2013

Volltextzugriff (PDF)

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High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

Melting of a 2D quantum electron solid in high magnetic field

Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited Al2O3 on GaAs

Correlation lengths of the wigner-crystal order in a two-dimensional electron system at high magnetic fields

GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

Evidence for two different solid phases of two-dimensional electrons in high magnetic fields

Reliable passivation of black phosphorus by thin hybrid coating

Giant microwave photoresistance of two-dimensional electron gas

Microwave resonance of the 2D Wigner crystal around integer Landau fillings

Evidence of a first-order phase transition between wigner-crystal and bubble phases of 2D electrons in higher landau levels

Effects of (NH4)2S passivation on the off-state performance of 3-dimensional InGaAs metal-oxide-semiconductor field-effect transistors

Atomic-layer-deposited nanostructures for graphene-based nanoelectronics

Top-gated graphene field-effect-transistors formed by decomposition of SiC

Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric

Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)

Magnetoconductance oscillations in graphene antidot arrays

Chemically exfoliating large sheets of phosphorene via choline chloride urea viscosity-tuning

Gasification of a South Australian low-rank coal with carbon dioxide and steam: kinetics and reactivity studies

GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

Photo-assisted capacitance-voltage characterization of high-quality atomic-layer-deposited Al2O3∕GaN metal-oxide-semiconductor structures

III-V-on-nothing metal-oxide-semiconductor field-effect transistors enabled by top-down nanowire release process: Experiment and simulation

Microwave resonance of the bubble phases in 1/4 and 3/4 filled high Landau levels

Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3

0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode \hbox\hbox\hbox MOSFET

Band offset determination of atomic-layer-deposited Al2O3 and HfO2 on InP by internal photoemission and spectroscopic ellipsometry

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