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High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

IEEE electron device letters, 2008-04, Vol.29 (4), p.294-296

2008

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Melting of a 2D quantum electron solid in high magnetic field

Nature physics, 2006-07, Vol.2 (7), p.452-455

2006

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Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited Al2O3 on GaAs

Applied physics letters, 2005-10, Vol.87 (18)

2005

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Correlation lengths of the wigner-crystal order in a two-dimensional electron system at high magnetic fields

Physical review letters, 2002-10, Vol.89 (17), p.176802-176802, Article 176802

2002

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GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

IEEE electron device letters, 2003-04, Vol.24 (4), p.209-211

2003

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Evidence for two different solid phases of two-dimensional electrons in high magnetic fields

Physical review letters, 2004-11, Vol.93 (20), p.206805.1-206805.4, Article 206805

2004

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Reliable passivation of black phosphorus by thin hybrid coating

Nanotechnology, 2017-06, Vol.28 (26), p.265201-265201

2017

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Microwave resonance of the 2D Wigner crystal around integer Landau fillings

Physical review letters, 2003-07, Vol.91 (1), p.016801-016801, Article 016801

2003

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Giant microwave photoresistance of two-dimensional electron gas

Applied physics letters, 2001-10, Vol.79 (14), p.2193-2195

2001

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First Direct Measurement of Sub-Nanosecond Polarization Switching in Ferroelectric Hafnium Zirconium Oxide

2019 IEEE International Electron Devices Meeting (IEDM), 2019, p.15.2.1-15.2.4

2019

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Evidence of a first-order phase transition between wigner-crystal and bubble phases of 2D electrons in higher landau levels

Physical review letters, 2004-10, Vol.93 (17), p.176808.1-176808.4, Article 176808

2004

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Effects of (NH4)2S passivation on the off-state performance of 3-dimensional InGaAs metal-oxide-semiconductor field-effect transistors

Applied physics letters, 2011-10, Vol.99 (15)

2011

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Atomic-layer-deposited nanostructures for graphene-based nanoelectronics

Applied physics letters, 2008-01, Vol.92 (1), p.013101-013101-3

2008

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Top-gated graphene field-effect-transistors formed by decomposition of SiC

Applied physics letters, 2008-03, Vol.92 (9), p.092102-092102-3

2008

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Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric

Applied physics letters, 2006-06, Vol.88 (26)

2006

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Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)

Applied physics letters, 2009-10, Vol.95 (17)

2009

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Magnetoconductance oscillations in graphene antidot arrays

Applied physics letters, 2008-09, Vol.93 (12), p.122102-122102-3

2008

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Chemically exfoliating large sheets of phosphorene via choline chloride urea viscosity-tuning

Nanotechnology, 2017-04, Vol.28 (15), p.155601-155601

2017

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GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

Applied physics letters, 2005-02, Vol.86 (6)

2005

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Gasification of a South Australian low-rank coal with carbon dioxide and steam: kinetics and reactivity studies

Fuel (Guildford), 1998-09, Vol.77 (11), p.1209-1219

1998

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Photo-assisted capacitance-voltage characterization of high-quality atomic-layer-deposited Al2O3∕GaN metal-oxide-semiconductor structures

Applied physics letters, 2007-04, Vol.90 (14)

2007

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III-V-on-nothing metal-oxide-semiconductor field-effect transistors enabled by top-down nanowire release process: Experiment and simulation

Applied physics letters, 2011-09, Vol.99 (11), p.112113-112113-3

2011

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Microwave resonance of the bubble phases in 1/4 and 3/4 filled high Landau levels

Physical review letters, 2002-09, Vol.89 (13), p.136804-136804, Article 136804

2002

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Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3

Journal of applied physics, 2016-12, Vol.120 (23)

2016

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Band offset determination of atomic-layer-deposited Al2O3 and HfO2 on InP by internal photoemission and spectroscopic ellipsometry

Journal of applied physics, 2013-01, Vol.113 (2)

2013

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High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

Melting of a 2D quantum electron solid in high magnetic field

Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited Al2O3 on GaAs

Correlation lengths of the wigner-crystal order in a two-dimensional electron system at high magnetic fields

GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

Evidence for two different solid phases of two-dimensional electrons in high magnetic fields

Reliable passivation of black phosphorus by thin hybrid coating

Microwave resonance of the 2D Wigner crystal around integer Landau fillings

Giant microwave photoresistance of two-dimensional electron gas

First Direct Measurement of Sub-Nanosecond Polarization Switching in Ferroelectric Hafnium Zirconium Oxide

Evidence of a first-order phase transition between wigner-crystal and bubble phases of 2D electrons in higher landau levels

Effects of (NH4)2S passivation on the off-state performance of 3-dimensional InGaAs metal-oxide-semiconductor field-effect transistors

Atomic-layer-deposited nanostructures for graphene-based nanoelectronics

Top-gated graphene field-effect-transistors formed by decomposition of SiC

Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric

Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)

Magnetoconductance oscillations in graphene antidot arrays

Chemically exfoliating large sheets of phosphorene via choline chloride urea viscosity-tuning

GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

Gasification of a South Australian low-rank coal with carbon dioxide and steam: kinetics and reactivity studies

Photo-assisted capacitance-voltage characterization of high-quality atomic-layer-deposited Al2O3∕GaN metal-oxide-semiconductor structures

III-V-on-nothing metal-oxide-semiconductor field-effect transistors enabled by top-down nanowire release process: Experiment and simulation

Microwave resonance of the bubble phases in 1/4 and 3/4 filled high Landau levels

Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3

Band offset determination of atomic-layer-deposited Al2O3 and HfO2 on InP by internal photoemission and spectroscopic ellipsometry

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