UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

IEEE journal of solid-state circuits, 2019-11, Vol.54 (11), p.3203-3214

2019

Volltextzugriff (PDF)

High-Performance Back-Illuminated Three-Dimensional Stacked Single-Photon Avalanche Diode Implemented in 45-nm CMOS Technology

IEEE journal of selected topics in quantum electronics, 2018-11, Vol.24 (6), p.1-9

2018

Volltextzugriff (PDF)

[Papers] Quantum Efficiency Simulation and Electrical Cross-talk Index Development with Monte-Carlo Simulation Based on Boltzmann Transport Equation

ITE TRANSACTIONS ON MEDIA TECHNOLOGY AND APPLICATIONS, 2018, Vol.6 (3), p.180-186

2018

Volltextzugriff (PDF)

Epitaxial growth and electrical characteristics of β-SiC on Si by low-pressure rapid thermal chemical vapor deposition

Japanese Journal of Applied Physics, 1995-03, Vol.34 (3), p.1447-1450

1995

Volltextzugriff (PDF)

Nonsilicide source/drain pixel for 0.25-μm CMOS image sensor

IEEE electron device letters, 2001-02, Vol.22 (2), p.71-73

2001

Volltextzugriff (PDF)

Effect of substrate bias on the performance and reliability of the split-gate source-side injected flash memory

IEEE electron device letters, 1999-08, Vol.20 (8), p.412-414

1999

Volltextzugriff (PDF)

A Comparison of Behaviors between Hydrogenated/Unhydrogenated Polysilicon Thin Film Transistors under Electric Stress

Japanese Journal of Applied Physics, 2000-07, Vol.39 (7R), p.3896

2000

Volltextzugriff (PDF)

Effects of Tungsten Polycide Process and Post-Polyoxidation Rapid Thermal Process on Electrical Characteristics of Thin Polysilicon Oxide

Japanese Journal of Applied Physics, 1999-10, Vol.38 (10A), p.L1091

1999

Volltextzugriff (PDF)

The impacts of control gate voltage on the cycling endurance of split gate flash memory

IEEE electron device letters, 2000-07, Vol.21 (7), p.359-361

2000

Volltextzugriff (PDF)

Thin nitride-capped poly-resistor for high density and high performance SRAM with self-aligned-contact

Electronics letters, 1999-11, Vol.35 (24), p.2148-2149

1999

Volltextzugriff (PDF)

Effects of different tungsten polycide process on the effective channel length and performance of deep submicron CMOS transistors

IEEE electron device letters, 1999-01, Vol.20 (1), p.36-38

1999

Volltextzugriff (PDF)

A novel programming technique for highly scalable and disturbance immune flash EEPROM

Solid-state electronics, 2001-02, Vol.45 (2), p.297-301

2001

Volltextzugriff (PDF)

High performance 0.25-um CMOS color imager technology with non-silicide source/drain pixel

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138), 2000, p.705-708

2000

Volltextzugriff (PDF)

Nonsilicide source/drain pixel for 0.25-/spl mu/m CMOS image sensor

IEEE electron device letters, 2001-02, Vol.22 (2), p.71-73

2001

Volltextzugriff (PDF)

Nonsilicide source/drain pixel for 0.25-[micro]m CMOS image sensor

IEEE electron device letters, 2001-02, Vol.22 (2), p.71

2001

Volltextzugriff (PDF)

Thin nitride-capped poly-resistor for high densityand high performance SRAM with self-aligned-contact

Electronics letters, 1999-11, Vol.35 (24), p.2148-2149

1999

Volltextzugriff (PDF)

Improved programming performance of EEPROM/flash cell using post-poly-Si gate N sub(2)O annealing

Electronics letters, 1999-01, Vol.35 (13), p.1112-1114

1999

Volltextzugriff (PDF)

Crosstalk improvement technology applicable to 0.14um cmos image sensor

2004

Volltextzugriff (PDF)

A high performance active pixel sensor with 0.18um CMOS color imager technology

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), 2001, p.24.3.1-24.3.4

2001

Volltextzugriff (PDF)

Crosstalk improvement technology applicable to 0.14/spl mu/m CMOS image sensor

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004, 2004, p.997-1000

2004

Volltextzugriff (PDF)

Active pixel image sensor scale down in 0.18 /spl mu/m CMOS technology

Digest. International Electron Devices Meeting, 2002, p.813-816

2002

Volltextzugriff (PDF)

Active pixel image sensor scale down in 0.18um CMOS technology

2002

Volltextzugriff (PDF)

Air-gap guard ring for pixel sensitivity and crosstalk improvement in deep sub-micron CMOS image sensor

IEEE International Electron Devices Meeting 2003, 2003, p.16.5.1-16.5.4

2003

Volltextzugriff (PDF)

1 – 23 von 23

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(15)
Mit Volltextzugriff
(20)

Publikationsform

Artikel
(16)
Tagungsberichte
(7)

Sprache

Englisch
(23)

Erscheinungsjahr

n.n

Thema

Science & Technology
(15)
Engineering
(12)
Engineering, Electrical & Electronic
(12)
Technology
(12)
Cmos Technology
(9)
Physical Sciences
(8)
Physics
(8)
Cmos Image Sensors
(6)
Physics, Applied
(6)
Cmos
(4)
Pixel
(4)
Computational Intelligence Society
(3)
Dark Current
(3)
Exact Sciences And Technology
(3)
Physics, Condensed Matter
(3)
Annealing
(2)
Applied Sciences
(2)
Avalanche Diodes
(2)
Cmos Logic Circuits
(2)
Cmos Process
(2)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

High-Performance Back-Illuminated Three-Dimensional Stacked Single-Photon Avalanche Diode Implemented in 45-nm CMOS Technology

[Papers] Quantum Efficiency Simulation and Electrical Cross-talk Index Development with Monte-Carlo Simulation Based on Boltzmann Transport Equation

Epitaxial growth and electrical characteristics of β-SiC on Si by low-pressure rapid thermal chemical vapor deposition

Nonsilicide source/drain pixel for 0.25-μm CMOS image sensor

Effect of substrate bias on the performance and reliability of the split-gate source-side injected flash memory

A Comparison of Behaviors between Hydrogenated/Unhydrogenated Polysilicon Thin Film Transistors under Electric Stress

Effects of Tungsten Polycide Process and Post-Polyoxidation Rapid Thermal Process on Electrical Characteristics of Thin Polysilicon Oxide

The impacts of control gate voltage on the cycling endurance of split gate flash memory

Thin nitride-capped poly-resistor for high density and high performance SRAM with self-aligned-contact

Effects of different tungsten polycide process on the effective channel length and performance of deep submicron CMOS transistors

A novel programming technique for highly scalable and disturbance immune flash EEPROM

High performance 0.25-um CMOS color imager technology with non-silicide source/drain pixel

Nonsilicide source/drain pixel for 0.25-/spl mu/m CMOS image sensor

Nonsilicide source/drain pixel for 0.25-[micro]m CMOS image sensor

Thin nitride-capped poly-resistor for high densityand high performance SRAM with self-aligned-contact

Improved programming performance of EEPROM/flash cell using post-poly-Si gate N sub(2)O annealing

Crosstalk improvement technology applicable to 0.14um cmos image sensor

A high performance active pixel sensor with 0.18um CMOS color imager technology

Crosstalk improvement technology applicable to 0.14/spl mu/m CMOS image sensor

Active pixel image sensor scale down in 0.18 /spl mu/m CMOS technology

Active pixel image sensor scale down in 0.18um CMOS technology

Air-gap guard ring for pixel sensitivity and crosstalk improvement in deep sub-micron CMOS image sensor

Suchergebnisse filtern