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Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation

Journal of applied physics, 2021-03, Vol.129 (12)

2021

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Insulated gate and surface passivation structures for GaN-based power transistors

Journal of physics. D, Applied physics, 2016-10, Vol.49 (39), p.393001

2016

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Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates

Applied physics letters, 2016-10, Vol.109 (16)

2016

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State of the art on gate insulation and surface passivation for GaN-based power HEMTs

Materials science in semiconductor processing, 2018-05, Vol.78, p.85-95

2018

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Inverse integral transformation method to derive local viscosity distribution measured by optical tweezers

Soft matter, 2020-08, Vol.16 (29), p.6826-6833

2020

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Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors

Applied physics letters, 2014-08, Vol.105 (5)

2014

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Current Collapse Reduction in AlGaN/GaN HEMTs by High-Pressure Water Vapor Annealing

IEEE transactions on electron devices, 2015-08, Vol.62 (8), p.2423-2428

2015

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Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors

Japanese Journal of Applied Physics, 2014-10, Vol.53 (10), p.100213-1-100213-10

2014

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Correlation between Structural and Photoelectrochemical Properties of GaN Porous Nanostructures Formed by Photo-Assisted Electrochemical Etching

Journal of the Electrochemical Society, 2014-01, Vol.161 (10), p.H705-H709

2014

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Structural characteristics of a non-polar ZnS layer on a ZnO buffer layer formed on a sapphire substrate by mist chemical vapor deposition

Japanese Journal of Applied Physics, 2018-06, Vol.57 (6), p.65503

2018

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Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.1075-1080

2015

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Investigation on optical absorption properties of electrochemically formed porous InP using photoelectric conversion devices

Applied surface science, 2013-08, Vol.279, p.116-120

2013

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Analytical derivation of charge relaxation time distribution in transistor from current noise spectrum using inverse integral transformation method

Applied physics express, 2018-03, Vol.11 (3), p.31201

2018

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Improvement of m‐plane ZnO films formed on buffer layers on sapphire substrates by mist chemical vapor deposition

Physica status solidi. A, Applications and materials science, 2017-03, Vol.214 (3), p.np-n/a

2017

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Structural characterization of mist chemical vapor deposited amorphous aluminum oxide films using water-free solvent

Journal of the Ceramic Society of Japan, 2019-08, Vol.127 (8), p.590-593

2019

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Impact of oxygen plasma treatment on the dynamic on-resistance of AlGaN/GaN high-electron-mobility transistors

Applied physics express, 2015-11, Vol.8 (11), p.111001

2015

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Calculating relaxation time distribution function from power spectrum based on inverse integral transformation method

Physics letters. A, 2015-03, Vol.379 (7), p.738-742

2015

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Single crystalline SnO2 thin films grown on m ‐plane sapphire substrate by mist chemical vapor deposition

Physica status solidi. C, 2017-01, Vol.14 (1-2), p.n/a

2017

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Bias-dependent Photoabsorption Properties of GaN Porous Structures under Back-side Illumination

ECS transactions, 2015-09, Vol.69 (2), p.161-166

2015

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Size evolution of onion structure under oscillatory shear flow

Chemical physics letters, 2009-06, Vol.475 (1), p.101-104

2009

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Image analysis of thickness in flowing soap films. I: effects of polymer

Experiments in fluids, 2010-09, Vol.49 (3), p.725-732

2010

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Ornstein–Uhlenbeck process in a human body weight fluctuation

Physica A, 2021-11, Vol.582, p.126286, Article 126286

2021

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Synthesis and characterization of mist chemical vapor deposited aluminum titanium oxide films

Japanese Journal of Applied Physics, 2019-07, Vol.58 (7), p.70905

2019

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Interface state density in mist chemical vapor deposited Al 2 O 3 /AlGaN/GaN structure

Japanese Journal of Applied Physics, 2024-08, Vol.63 (8), p.80905

2024

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Formation process of shear-induced onion structure made of quaternary system SDS/octanol/water/NaCl

Chemical physics letters, 2008-04, Vol.456 (1), p.31-35

2008

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Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation

Insulated gate and surface passivation structures for GaN-based power transistors

Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates

State of the art on gate insulation and surface passivation for GaN-based power HEMTs

Inverse integral transformation method to derive local viscosity distribution measured by optical tweezers

Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors

Current Collapse Reduction in AlGaN/GaN HEMTs by High-Pressure Water Vapor Annealing

Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors

Correlation between Structural and Photoelectrochemical Properties of GaN Porous Nanostructures Formed by Photo-Assisted Electrochemical Etching

Structural characteristics of a non-polar ZnS layer on a ZnO buffer layer formed on a sapphire substrate by mist chemical vapor deposition

Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces

Investigation on optical absorption properties of electrochemically formed porous InP using photoelectric conversion devices

Analytical derivation of charge relaxation time distribution in transistor from current noise spectrum using inverse integral transformation method

Improvement of m‐plane ZnO films formed on buffer layers on sapphire substrates by mist chemical vapor deposition

Structural characterization of mist chemical vapor deposited amorphous aluminum oxide films using water-free solvent

Impact of oxygen plasma treatment on the dynamic on-resistance of AlGaN/GaN high-electron-mobility transistors

Calculating relaxation time distribution function from power spectrum based on inverse integral transformation method

Single crystalline SnO2 thin films grown on m ‐plane sapphire substrate by mist chemical vapor deposition

Bias-dependent Photoabsorption Properties of GaN Porous Structures under Back-side Illumination

Size evolution of onion structure under oscillatory shear flow

Image analysis of thickness in flowing soap films. I: effects of polymer

Ornstein–Uhlenbeck process in a human body weight fluctuation

Synthesis and characterization of mist chemical vapor deposited aluminum titanium oxide films

Interface state density in mist chemical vapor deposited Al 2 O 3 /AlGaN/GaN structure

Formation process of shear-induced onion structure made of quaternary system SDS/octanol/water/NaCl

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