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Polymorphism Control of Layered MoTe2 through Two-Dimensional Solid-Phase Crystallization

Scientific reports, 2019-06, Vol.9 (1), p.1-8, Article 8810

2019

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Electrode dependence of filament formation in HfO2 resistive-switching memory

Journal of applied physics, 2011-04, Vol.109 (8)

2011

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Fabrication of Vertically Stacked Nanosheet Junctionless Field-Effect Transistors and Applications for the CMOS and CFET Inverters

IEEE transactions on electron devices, 2020-09, Vol.67 (9), p.3504-3509

2020

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Robust Binary Neural Network Operation From 233 K to 398 K via Gate Stack and Bias Optimization of Ferroelectric FinFET Synapses

IEEE electron device letters, 2021-08, Vol.42 (8), p.1144-1147

2021

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Analysis of Taiwan's Mask Collection and Plan Evasion during the COVID-19 Pandemic

International journal of environmental research and public health, 2021-04, Vol.18 (8), p.4137

2021

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Subthreshold Swing Saturation of Nanoscale MOSFETs Due to Source-to-Drain Tunneling at Cryogenic Temperatures

IEEE electron device letters, 2020-09, Vol.41 (9), p.1-1

2020

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Trade, industrial, and privatization policies with endogenous market structure

The Manchester school, 2024-09, Vol.92 (5), p.494-506

2024

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Fabrication of GeSn Nanowire MOSFETs by Utilizing Highly Selective Etching Techniques

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.2028-2033

2023

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Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor

Applied physics letters, 2012-09, Vol.101 (13)

2012

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Poly-Si Finlike Thin-Film Transistors With Various Wide Drain Designs for Radio Frequency and 3-D Integrated Circuits

IEEE transactions on electron devices, 2020-06, Vol.67 (6), p.2342-2345

2020

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Impacts of the Shell Doping Profile on the Electrical Characteristics of Junctionless FETs

IEEE transactions on electron devices, 2015-11, Vol.62 (11), p.3541-3546

2015

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Large‐Area 2D Layered MoTe2 by Physical Vapor Deposition and Solid‐Phase Crystallization in a Tellurium‐Free Atmosphere

Advanced materials interfaces, 2017-09, Vol.4 (17), p.n/a

2017

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Network Externalities and Downstream Collusion under Asymmetric Costs: A Note

Games, 2023-04, Vol.14 (2), p.29

2023

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Foreign competition and optimal privatization with excess burden of taxation

Journal of economics (Vienna, Austria), 2018-10, Vol.125 (2), p.189-204

2018

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Performance Improvement for Ge FinFET CMOS Inverter With Supercritical Fluid Treatment

IEEE electron device letters, 2022-06, Vol.43 (6), p.838-841

2022

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First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.2101-2107

2022

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Towards Predictive Crude Oil Purchase: A Case Study in the USA and Europe

Energies (Basel), 2022-06, Vol.15 (11), p.4003

2022

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First Demonstration of Ferroelectric Tunnel Thin-Film Transistor Nonvolatile Memory With Polycrystalline-Silicon Channel and HfZrO } Gate Dielectric

IEEE transactions on electron devices, 2022-11, Vol.69 (11), p.1-6

2022

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Does compensative subsidy alleviate pollutant emission and improve welfare under cross-industry pollution?

Ekonomska istraživanja, 2023-12, Vol.36 (1)

2023

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Enhancing the Performance of E-Mode AlGaN/GaN HEMTs With Recessed Gates Through Low-Damage Neutral Beam Etching and Post-Metallization Annealing

IEEE open journal of nanotechnology, 2023, Vol.4, p.150-155

2023

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Prediction of Knowledge Management for Success of Franchise Hospitality in a Post-Pandemic Economy

Sustainability, 2020-10, Vol.12 (20), p.8755

2020

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Characteristics of Poly-Si Junctionless FinFETs With HfZrO Using Forming Gas Annealing

IEEE transactions on nanotechnology, 2020, Vol.19, p.390-396

2020

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Collusive Stability with Relative Performance and Network Externalities

Games, 2024-06, Vol.15 (3), p.21

2024

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Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress

IEEE open journal of nanotechnology, 2024, Vol.5, p.9-16

2024

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A Harmonic Radar Tag with High Detection Range Utilizing Ge FinFETs CMOS Technology

IEEE electron device letters, 2022-11, Vol.43 (11), p.1-1

2022

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Polymorphism Control of Layered MoTe2 through Two-Dimensional Solid-Phase Crystallization

Electrode dependence of filament formation in HfO2 resistive-switching memory

Fabrication of Vertically Stacked Nanosheet Junctionless Field-Effect Transistors and Applications for the CMOS and CFET Inverters

Robust Binary Neural Network Operation From 233 K to 398 K via Gate Stack and Bias Optimization of Ferroelectric FinFET Synapses

Analysis of Taiwan's Mask Collection and Plan Evasion during the COVID-19 Pandemic

Subthreshold Swing Saturation of Nanoscale MOSFETs Due to Source-to-Drain Tunneling at Cryogenic Temperatures

Trade, industrial, and privatization policies with endogenous market structure

Fabrication of GeSn Nanowire MOSFETs by Utilizing Highly Selective Etching Techniques

Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor

Poly-Si Finlike Thin-Film Transistors With Various Wide Drain Designs for Radio Frequency and 3-D Integrated Circuits

Impacts of the Shell Doping Profile on the Electrical Characteristics of Junctionless FETs

Large‐Area 2D Layered MoTe2 by Physical Vapor Deposition and Solid‐Phase Crystallization in a Tellurium‐Free Atmosphere

Network Externalities and Downstream Collusion under Asymmetric Costs: A Note

Foreign competition and optimal privatization with excess burden of taxation

Performance Improvement for Ge FinFET CMOS Inverter With Supercritical Fluid Treatment

First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration With Dual Work Function Gate for Ultralow-Power SRAM and RF Applications

Towards Predictive Crude Oil Purchase: A Case Study in the USA and Europe

First Demonstration of Ferroelectric Tunnel Thin-Film Transistor Nonvolatile Memory With Polycrystalline-Silicon Channel and HfZrO } Gate Dielectric

Does compensative subsidy alleviate pollutant emission and improve welfare under cross-industry pollution?

Enhancing the Performance of E-Mode AlGaN/GaN HEMTs With Recessed Gates Through Low-Damage Neutral Beam Etching and Post-Metallization Annealing

Prediction of Knowledge Management for Success of Franchise Hospitality in a Post-Pandemic Economy

Characteristics of Poly-Si Junctionless FinFETs With HfZrO Using Forming Gas Annealing

Collusive Stability with Relative Performance and Network Externalities

Temperature-Dependent Hydrogen Modulations of Ultra-Scaled a-IGZO Thin Film Transistor Under Gate Bias Stress

A Harmonic Radar Tag with High Detection Range Utilizing Ge FinFETs CMOS Technology

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