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A Recessed Source Contact Technology to Reduce the Specific On-Resistance of Power MOSFET on 4H-SiC

IEEE electron device letters, 2024-10, Vol.45 (10), p.1930-1932

2024

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Evaluation of a 100-nm Gate Length E-Mode InAs High Electron Mobility Transistor With Ti/Pt/Au Ohmic Contacts and Mesa Sidewall Channel Etch for High-Speed and Low-Power Logic Applications

IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.797-802

2018

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Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application

IEEE electron device letters, 2017-08, Vol.38 (8), p.1101-1104

2017

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Study of tri-gate AlGaN/GaN MOS-HEMTs for power application

Micro and Nano Engineering, 2020-11, Vol.9, p.100073, Article 100073

2020

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Communication—Potential of the π-Gate InAs HEMTs for High-Speed and Low-Power Logic Applications

ECS journal of solid state science and technology, 2019, Vol.8 (6), p.P319-P321

2019

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An Au-free GaN high electron mobility transistor with Ti/Al/W Ohmic metal structure

2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2015, p.419-422

2015

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Study of p-GaN Gate MOS-HEMT with Al2O3 Insulator for High-Power Applications

Journal of electronic materials, 2023-04, Vol.52 (4), p.2865-2870

2023

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Hydrothermal crystallization and modification of surface hydroxyl groups of anodized TiO2 nanotube-arrays for more efficient photoenergy conversion

Electrochimica acta, 2012-09, Vol.78, p.236-243

2012

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Evaluation of an InAs HEMT with source-connected field plate for high-speed and low-power logic applications

Solid-state electronics, 2019-07, Vol.157, p.55-60

2019

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WITHDRAWN: Study of tri-gate AlGaN/GaN MOS-HEMTs for power application

Microelectronic engineering, 2020-05, p.111366, Article 111366

2020

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Study of the mesa etched tri-gate InAs HEMTs with extremely low SS for low-power logic applications

2018 China Semiconductor Technology International Conference (CSTIC), 2018, p.1-3

2018

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Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power Applications

Journal of electronic materials, 2020-02, Vol.49 (2), p.1348-1353

2020

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Enhancement-Mode GaN MIS-HEMTs With LaHfO x Gate Insulator for Power Application

IEEE electron device letters, 2017-08, Vol.38 (8), p.1101-1104

2017

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Inx Ga1−x As materials for post CMOS application: Materials and device aspects

2014 IEEE International Conference on Electron Devices and Solid-State Circuits, 2014, p.1-2

2014

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Hydrothermal crystallization and modification of surface hydroxyl groups of anodized Ti02 nanotube-arrays for more efficient photoenergy conversion

Electrochimica acta, 2012, Vol.78, p.236-243

2012

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Effects of layer sequence and postdeposition annealing temperature on performance of La 2 O 3 and HfO 2 multilayer composite oxides on In 0.53 Ga 0.47 As for MOS capacitor application

Applied physics express, 2014-03, Vol.7 (3), p.31201

2014

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A Recessed Source Contact Technology to Reduce the Specific On-Resistance of Power MOSFET on 4H-SiC

Evaluation of a 100-nm Gate Length E-Mode InAs High Electron Mobility Transistor With Ti/Pt/Au Ohmic Contacts and Mesa Sidewall Channel Etch for High-Speed and Low-Power Logic Applications

Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application

Study of tri-gate AlGaN/GaN MOS-HEMTs for power application

Communication—Potential of the π-Gate InAs HEMTs for High-Speed and Low-Power Logic Applications

An Au-free GaN high electron mobility transistor with Ti/Al/W Ohmic metal structure

Study of p-GaN Gate MOS-HEMT with Al2O3 Insulator for High-Power Applications

Hydrothermal crystallization and modification of surface hydroxyl groups of anodized TiO2 nanotube-arrays for more efficient photoenergy conversion

Evaluation of an InAs HEMT with source-connected field plate for high-speed and low-power logic applications

WITHDRAWN: Study of tri-gate AlGaN/GaN MOS-HEMTs for power application

Study of the mesa etched tri-gate InAs HEMTs with extremely low SS for low-power logic applications

Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power Applications

Enhancement-Mode GaN MIS-HEMTs With LaHfO x Gate Insulator for Power Application

Inx Ga1−x As materials for post CMOS application: Materials and device aspects

Hydrothermal crystallization and modification of surface hydroxyl groups of anodized Ti02 nanotube-arrays for more efficient photoenergy conversion

Effects of layer sequence and postdeposition annealing temperature on performance of La 2 O 3 and HfO 2 multilayer composite oxides on In 0.53 Ga 0.47 As for MOS capacitor application

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